| Present and future non-volatile memories for space S Gerardin, A Paccagnella IEEE Transactions on nuclear science 57 (6), 3016-3039, 2010 | 194 | 2010 |
| Radiation-induced short channel (RISCE) and narrow channel (RINCE) effects in 65 and 130 nm MOSFETs F Faccio, S Michelis, D Cornale, A Paccagnella, S Gerardin IEEE Transactions on Nuclear Science 62 (6), 2933-2940, 2015 | 172 | 2015 |
| Radiation effects in flash memories S Gerardin, M Bagatin, A Paccagnella, K Grürmann, F Gliem, TR Oldham, ... IEEE Transactions on Nuclear Science 60 (3), 1953-1969, 2013 | 148 | 2013 |
| Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments L Gonella, F Faccio, M Silvestri, S Gerardin, D Pantano, V Re, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007 | 136 | 2007 |
| A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility M Violante, L Sterpone, A Manuzzato, S Gerardin, P Rech, M Bagatin, ... IEEE Transactions on Nuclear Science 54 (4), 1184-1189, 2007 | 106 | 2007 |
| Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ... IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017 | 83 | 2017 |
| Ionizing Radiation Effectsin Electronics M Bagatin, S Gerardin Taylor & Francis, 2016 | 76 | 2016 |
| Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source C Andreani, A Pietropaolo, A Salsano, G Gorini, M Tardocchi, ... Applied physics letters 92 (11), 114101, 2008 | 76 | 2008 |
| TID sensitivity of NAND flash memory building blocks M Bagatin, G Cellere, S Gerardin, A Paccagnella, A Visconti, S Beltrami IEEE Transactions on Nuclear Science 56 (4), 1909-1913, 2009 | 71 | 2009 |
| Key contributions to the cross section of NAND flash memories irradiated with heavy ions M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, S Beltrami, ... IEEE Transactions on Nuclear Science 55 (6), 3302-3308, 2008 | 60 | 2008 |
| Impact of NBTI aging on the single-event upset of SRAM cells M Bagatin, S Gerardin, A Paccagnella, F Faccio IEEE Transactions on Nuclear Science 57 (6), 3245-3250, 2010 | 49 | 2010 |
| Error instability in floating gate flash memories exposed to TID M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, M Bonanomi, ... IEEE Transactions on Nuclear Science 56 (6), 3267-3273, 2009 | 49 | 2009 |
| Catastrophic failure in highly scaled commercial NAND flash memories F Irom, DN Nguyen, M Bagatin, G Cellere, S Gerardin, A Paccagnella IEEE Transactions on Nuclear Science 57 (1), 266-271, 2010 | 48 | 2010 |
| Drain current decrease in MOSFETs after heavy ion irradiation A Cester, S Gerardin, A Paccagnella, JR Schwank, G Vizkelethy, ... IEEE transactions on nuclear science 51 (6), 3150-3157, 2004 | 44 | 2004 |
| Heavy-ion induced threshold voltage tails in floating gate arrays S Gerardin, M Bagatin, A Paccagnella, G Cellere, A Visconti, M Bonanomi, ... IEEE Transactions on Nuclear Science 57 (6), 3199-3205, 2010 | 41 | 2010 |
| Effectiveness of TMR-based techniques to mitigate alpha-induced SEU accumulation in commercial SRAM-based FPGAs A Manuzzato, S Gerardin, A Paccagnella, L Sterpone, M Violante 2007 9th European Conference on Radiation and Its Effects on Components and …, 2007 | 41 | 2007 |
| Dose-rate sensitivity of 65-nm MOSFETs exposed to ultrahigh doses G Borghello, F Faccio, E Lerario, S Michelis, S Kulis, DM Fleetwood, ... IEEE Transactions on Nuclear Science 65 (8), 1482-1487, 2018 | 40 | 2018 |
| Increase in the heavy-ion upset cross section of floating gate cells previously exposed to TID M Bagatin, S Gerardin, A Paccagnella, G Cellere, A Visconti, M Bonanomi IEEE Transactions on Nuclear Science 57 (6), 3407-3413, 2010 | 40 | 2010 |
| Enhancement of transistor-to-transistor variability due to total dose effects in 65-nm MOSFETs S Gerardin, M Bagatin, D Cornale, L Ding, S Mattiazzo, A Paccagnella, ... IEEE Transactions on Nuclear Science 62 (6), 2398-2403, 2015 | 38 | 2015 |
| Impact of technology scaling on the heavy-ion upset cross section of multi-level floating gate cells M Bagatin, S Gerardin, A Paccagnella, A Visconti IEEE Transactions on Nuclear Science 58 (3), 969-974, 2011 | 38 | 2011 |
