Zhongguang Xu
Zhongguang Xu
Micron, UC Riverside, institute of microelectronics, CAS
Verified email at ucr.edu
Title
Cited by
Cited by
Year
Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high- trapping layer
C Zhu, Z Huo, Z Xu, M Zhang, Q Wang, J Liu, S Long, M Liu
Applied Physics Letters 97 (25), 253503, 2010
762010
In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy
Z Zuo, Z Xu, R Zheng, A Khanaki, JG Zheng, J Liu
Scientific reports 5, 14760, 2015
652015
Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy
Z Xu, H Tian, A Khanaki, R Zheng, M Suja, J Liu
Scientific reports 7 (1), 1-7, 2017
362017
Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy
Z Xu, R Zheng, A Khanaki, Z Zuo, J Liu
Applied Physics Letters 107 (21), 213103, 2015
322015
Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy
Z Xu, A Khanaki, H Tian, R Zheng, M Suja, JG Zheng, J Liu
Applied Physics Letters 109 (4), 043110, 2016
232016
Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy
C Zhu, Z Xu, Z Huo, R Yang, Z Zheng, Y Cui, J Liu, Y Wang, D Shi, ...
Applied Physics Letters 99 (22), 223504, 2011
212011
Investigation of One-Dimensional Thickness Scaling onResistive Switching Device Performance
M Wang, H Lv, Q Liu, Y Li, Z Xu, S Long, H Xie, K Zhang, X Liu, H Sun, ...
IEEE electron device letters 33 (11), 1556-1558, 2012
192012
Role of carbon interstitials in transition metal substrates on controllable synthesis of high-quality large-area two-dimensional hexagonal boron nitride layers
H Tian, A Khanaki, P Das, R Zheng, Z Cui, Y He, W Shi, Z Xu, R Lake, ...
Nano Letters 18 (6), 3352-3361, 2018
182018
Improved performance of non-volatile memory with Au-Al2O3 core-shell nanocrystals embedded in HfO2 matrix
Z Xu, C Zhu, Z Huo, Y Cui, Y Wang, F Li, M Liu
Applied Physics Letters 100 (20), 203509, 2012
152012
Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures
A Khanaki, H Tian, Z Xu, R Zheng, Y He, Z Cui, J Yang, J Liu
Nanotechnology 29 (3), 035602, 2017
112017
Low-temperature growth of graphene on iron substrate by molecular beam epitaxy
R Zheng, Z Xu, A Khanaki, H Tian, Z Zuo, JG Zheng, J Liu
Thin Solid Films 627, 39-43, 2017
102017
Effects of high-temperature O2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structures
Z Xu, C Zhu, Z Huo, S Zhao, M Liu
Journal of Physics D: Applied Physics 45 (18), 185103, 2012
102012
Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer
ZW Zheng, ZL Huo, CX Zhu, ZG Xu, J Liu, M Liu
ChPhB 20 (10), 108501, 2011
102011
Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications
Z Xu, Z Huo, C Zhu, Y Cui, M Wang, Z Zheng, J Liu, Y Wang, F Li, M Liu
Journal of Applied Physics 110 (10), 104514, 2011
82011
Precipitation growth of graphene under exfoliated hexagonal boron nitride to form heterostructures on cobalt substrate by molecular beam epitaxy
R Zheng, A Khanaki, H Tian, Y He, Y Cui, Z Xu, J Liu
Applied Physics Letters 111 (1), 011903, 2017
72017
Self-assembled cubic boron nitride nanodots
A Khanaki, Z Xu, H Tian, R Zheng, Z Zuo, JG Zheng, J Liu
Scientific reports 7 (1), 1-10, 2017
72017
Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge trap flash memory
C Zhu, Z Xu, Z Huo, Z Zheng, Y Cui, Y Wang, J Liu, F Li, M Liu
Journal of Physics D: Applied Physics 45 (6), 065104, 2012
32012
A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications
J Zhang, Y Wang, J Liu, M Zhang, Z Xu, Z Huo, M Liu
Journal of Semiconductors 33 (8), 2012
22012
High performance MAHAHOS memory devices: charge trapping and distribution in bandgap engineered structure
C Zhu, Z Xu, R Yang, Z Huo, Y Cui, D Shi, Y Wang, J Liu, G Zhang, F Li, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
12012
Performance optimization for TANOS by using pre-treatment of plasma oxygenic ions
Z Xu, Z Huo, C Zhu, J Liu, M Liu
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding, 1-4, 2011
12011
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