| Optimized and transferable nonlocal separable ab initio pseudopotentials JS Lin, A Qteish, MC Payne, V Heine Physical Review B 47 (8), 4174, 1993 | 1102 | 1993 |
| First-principles calculations of the electronic properties of silicon quantum wires AJ Read, RJ Needs, KJ Nash, LT Canham, PDJ Calcott, A Qteish Physical review letters 69 (8), 1232, 1992 | 560 | 1992 |
| Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN P Rinke, M Winkelnkemper, A Qteish, D Bimberg, J Neugebauer, ... Physical Review B 77 (7), 075202, 2008 | 443 | 2008 |
| Combining GW calculations with exact-exchange density-functional theory: an analysis of valence-band photoemission for compound semiconductors P Rinke, A Qteish, J Neugebauer, C Freysoldt, M Scheffler New Journal of physics 7 (1), 126, 2005 | 351 | 2005 |
| Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory P Rinke, M Scheffler, A Qteish, M Winkelnkemper, D Bimberg, ... Applied Physics Letters 89 (16), 161919, 2006 | 188 | 2006 |
| Polarization, band lineups, and stability of SiC polytypes A Qteish, V Heine, RJ Needs Physical Review B 45 (12), 6534, 1992 | 186 | 1992 |
| Exciting prospects for solids: Exact‐exchange based functionals meet quasiparticle energy calculations P Rinke, A Qteish, J Neugebauer, M Scheffler physica status solidi (b) 245 (5), 929-945, 2008 | 103 | 2008 |
| Band parameters and strain effects in ZnO and group-III nitrides Q Yan, P Rinke, M Winkelnkemper, A Qteish, D Bimberg, M Scheffler, ... Semiconductor science and technology 26 (1), 014037, 2010 | 98 | 2010 |
| Exact-exchange-based quasiparticle energy calculations for the band gap, effective masses, and deformation potentials of ScN A Qteish, P Rinke, M Scheffler, J Neugebauer Physical Review B 74 (24), 245208, 2006 | 98 | 2006 |
| Improved model-solid-theory calculations for valence-band offsets at semiconductor-semiconductor interfaces A Qteish, RJ Needs Physical Review B 45 (3), 1317, 1992 | 86 | 1992 |
| Strain effects and band parameters in MgO, ZnO, and CdO Q Yan, P Rinke, M Winkelnkemper, A Qteish, D Bimberg, M Scheffler, ... Applied Physics Letters 101 (15), 152105, 2012 | 70 | 2012 |
| Microscopic atomic structure and stability of Si-Ge solid solutions A Qteish, R Resta Physical Review B 37 (3), 1308, 1988 | 70 | 1988 |
| Self-interaction-corrected local density approximation pseudopotential calculations of the structural phase transformations of ZnO and ZnS under high pressure A Qteish Journal of Physics: Condensed Matter 12 (26), 5639, 2000 | 63 | 2000 |
| Ab initio pseudopotential study of the structural phase transformations of ZnS under high pressure A Nazzal, A Qteish Physical Review B 53 (13), 8262, 1996 | 62 | 1996 |
| Electronic-charge displacement around a stacking boundary in SiC polytypes A Qteish, V Heine, RJ Needs Physical Review B 45 (12), 6376, 1992 | 59 | 1992 |
| Role of semicore states in the electronic structure of group-III nitrides: An exact-exchange study A Qteish, AI Al-Sharif, M Fuchs, M Scheffler, S Boeck, J Neugebauer Physical Review B 72 (15), 155317, 2005 | 54 | 2005 |
| Ab initio study of the phase transformations of ZnSe under high pressure: stability of the cinnabar and SC16 phases A Qteish, A Munoz Journal of Physics: Condensed Matter 12 (8), 1705, 2000 | 49 | 2000 |
| Pseudopotential calculations of the valence-band offsets at the ZnSe/Ge, ZnSe/GaAs, and GaAs/Ge (110) interfaces: Effects of the Ga and Zn 3d electrons A Qteish, RJ Needs Physical Review B 43 (5), 4229, 1991 | 48 | 1991 |
| Pressure dependence of vibrational, thermal, and elastic properties of ZnSe: An ab initio study I Hamdi, M Aouissi, A Qteish, N Meskini Physical Review B 73 (17), 174114, 2006 | 46 | 2006 |
| Ionicity scale based on the centers of maximally localized Wannier functions H Abu-Farsakh, A Qteish Physical Review B 75 (8), 085201, 2007 | 45 | 2007 |
Matthias SchefflerDirector at Fritz-Haber-Institut der Max-Planck-GesellschaftVerified email at fhi-berlin.mpg.de
