متابعة
Jeffrey Bokor
Jeffrey Bokor
Professor of electrical engineering and computer sciences, University of California, Berkeley
بريد إلكتروني تم التحقق منه على eecs.berkeley.edu
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
D Hisamoto, WC Lee, J Kedzierski, H Takeuchi, K Asano, C Kuo, ...
IEEE transactions on electron devices 47 (12), 2320-2325, 2000
23652000
MoS2 transistors with 1-nanometer gate lengths
SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ...
Science 354 (6308), 99-102, 2016
15192016
Ultralow contact resistance between semimetal and monolayer semiconductors
PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park, MH Chiu, AY Lu, ...
Nature 593 (7858), 211-217, 2021
9142021
FinFET scaling to 10 nm gate length
B Yu, L Chang, S Ahmed, H Wang, S Bell, CY Yang, C Tabery, C Ho, ...
Digest. International Electron Devices Meeting,, 251-254, 2002
8662002
Electron thermalization in gold
WS Fann, R Storz, HWK Tom, J Bokor
Physical Review B 46 (20), 13592, 1992
8501992
Sub 50-nm finfet: Pmos
X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
8461999
Direct measurement of nonequilibrium electron-energy distributions in subpicosecond laser-heated gold films
WS Fann, R Storz, HWK Tom, J Bokor
Physical review letters 68 (18), 2834, 1992
7051992
Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
C Hu, TJ King, V Subramanian, L Chang, X Huang, YK Choi, ...
US Patent 6,413,802, 2002
6842002
Direct chemical vapor deposition of graphene on dielectric surfaces
A Ismach, C Druzgalski, S Penwell, A Schwartzberg, M Zheng, A Javey, ...
Nano letters 10 (5), 1542-1548, 2010
6392010
Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI
F Assaderaghi, D Sinitsky, SA Parke, J Bokor, PK Ko, C Hu
IEEE Transactions on Electron Devices 44 (3), 414-422, 1997
6301997
Sub-50 nm P-channel FinFET
X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ...
IEEE Transactions on Electron Devices 48 (5), 880-886, 2001
6192001
Gold nanoparticle self-similar chain structure organized by DNA origami
B Ding, Z Deng, H Yan, S Cabrini, RN Zuckermann, J Bokor
Journal of the American Chemical Society 132 (10), 3248-3249, 2010
6152010
Diameter-dependent electron mobility of InAs nanowires
AC Ford, JC Ho, YL Chueh, YC Tseng, Z Fan, J Guo, J Bokor, A Javey
Nano Letters 9 (1), 360-365, 2009
4822009
Sub-20 nm CMOS FinFET technologies
YK Choi, N Lindert, P Xuan, S Tang, D Ha, E Anderson, TJ King, J Bokor, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
4612001
Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography
X Liang, YS Jung, S Wu, A Ismach, DL Olynick, S Cabrini, J Bokor
Nano letters 10 (7), 2454-2460, 2010
4362010
A folded-channel MOSFET for deep-sub-tenth micron era
D Hisamoto, WC Lee, J Kedzierski, E Anderson, H Takeuchi, K Asano, ...
IEDM Tech. Dig 1998, 1032-1034, 1998
4101998
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
JP Llinas, A Fairbrother, G Borin Barin, W Shi, K Lee, S Wu, B Yong Choi, ...
Nature communications 8 (1), 633, 2017
4052017
Ultra-thin body SOI MOSFET for deep-sub-tenth micron era
YK Choi, K Asano, N Lindert, V Subramanian, TJ King, J Bokor, C Hu
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
3881999
Nanofocusing in a metal–insulator–metal gap plasmon waveguide with a three-dimensional linear taper
H Choo, MK Kim, M Staffaroni, TJ Seok, J Bokor, S Cabrini, PJ Schuck, ...
Nature Photonics 6 (12), 838-844, 2012
3832012
Extremely scaled silicon nano-CMOS devices
L Chang, Y Choi, D Ha, P Ranade, S Xiong, J Bokor, C Hu, TJ King
Proceedings of the IEEE 91 (11), 1860-1873, 2003
3752003
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مقالات 1–20