| Manipulation of charge and exciton distribution based on blue aggregation‐induced emission fluorophors: a novel concept to achieve high‐performance hybrid white organic light … B Liu, H Nie, X Zhou, S Hu, D Luo, D Gao, J Zou, M Xu, L Wang, Z Zhao, ... Advanced Functional Materials 26 (5), 776-783, 2016 | 207 | 2016 |
| High-performance doping-free hybrid white OLEDs based on blue aggregation-induced emission luminogens B Liu, H Nie, G Lin, S Hu, D Gao, J Zou, M Xu, L Wang, Z Zhao, H Ning, ... ACS applied materials & interfaces 9 (39), 34162-34171, 2017 | 68 | 2017 |
| High mobility amorphous indium-gallium-zinc-oxide thin-film transistor by aluminum oxide passivation layer S Hu, K Lu, H Ning, Z Zheng, H Zhang, Z Fang, R Yao, M Xu, L Wang, ... IEEE Electron Device Letters 38 (7), 879-882, 2017 | 66 | 2017 |
| All-sputtered, flexible, bottom-gate IGZO/Al 2 O 3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process Z Zheng, Y Zeng, R Yao, Z Fang, H Zhang, S Hu, X Li, H Ning, J Peng, ... Journal of Materials Chemistry C 5 (28), 7043-7050, 2017 | 62 | 2017 |
| High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2 active layer X Liu, H Ning, J Chen, W Cai, S Hu, R Tao, Y Zeng, Z Zheng, R Yao, M Xu, ... Applied Physics Letters 108 (11), 2016 | 35 | 2016 |
| Effect of ITO serving as a barrier layer for Cu electrodes on performance of a-IGZO TFT S Hu, K Lu, H Ning, Z Fang, X Liu, W Xie, R Yao, J Zou, M Xu, J Peng IEEE Electron Device Letters 39 (4), 504-507, 2018 | 34 | 2018 |
| Direct inkjet printing of silver source/drain electrodes on an amorphous InGaZnO layer for thin-film transistors H Ning, J Chen, Z Fang, R Tao, W Cai, R Yao, S Hu, Z Zhu, Y Zhou, ... Materials 10 (1), 51, 2017 | 34 | 2017 |
| Effect of post treatment for Cu-Cr source/drain electrodes on a-IGZO TFTs S Hu, Z Fang, H Ning, R Tao, X Liu, Y Zeng, R Yao, F Huang, Z Li, M Xu, ... Materials 9 (8), 623, 2016 | 26 | 2016 |
| Fully printed top-gate metal–oxide thin-film transistors based on scandium-zirconium-oxide dielectric Y Li, L Lan, S Hu, P Gao, X Dai, P He, X Li, J Peng IEEE Transactions on Electron Devices 66 (1), 445-450, 2018 | 25 | 2018 |
| Mobility enhancement in amorphous In-Ga-Zn-O thin-film transistor by induced metallic in nanoparticles and Cu electrodes S Hu, H Ning, K Lu, Z Fang, Y Li, R Yao, M Xu, L Wang, J Peng, X Lu Nanomaterials 8 (4), 197, 2018 | 21 | 2018 |
| A novel nondestructive testing method for amorphous Si–Sn–O films X Liu, W Cai, J Chen, Z Fang, H Ning, S Hu, R Tao, Y Zeng, Z Zheng, ... Journal of Physics D: Applied Physics 49 (50), 505102, 2016 | 20 | 2016 |
| High-performance and flexible neodymium-doped oxide semiconductor thin-film transistors with copper alloy bottom-gate electrode K Lu, R Yao, S Hu, X Liu, J Wei, W Wu, H Ning, M Xu, L Lan, J Peng IEEE Electron Device Letters 39 (6), 839-842, 2018 | 15 | 2018 |
| Effect of Al2O3 Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT S Hu, H Ning, K Lu, Z Fang, R Tao, R Yao, J Zou, M Xu, L Wang, J Peng IEEE Journal of the Electron Devices Society 6, 733-737, 2018 | 14 | 2018 |
| Effective defect passivation of CsPbBr 3 quantum dots using gallium cations toward the fabrication of bright perovskite LEDs J Wang, Y Xu, S Zou, C Pang, R Cao, Z Pan, C Guo, S Hu, J Liu, Z Xie, ... Journal of Materials Chemistry C 9 (34), 11324-11330, 2021 | 13 | 2021 |
| Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer H Ning, Y Zeng, Z Zheng, H Zhang, Z Fang, R Yao, S Hu, X Li, J Peng, ... IEEE Transactions on Electron Devices 65 (2), 537-541, 2018 | 13 | 2018 |
| All-aluminum thin film transistor fabrication at room temperature R Yao, Z Zheng, Y Zeng, X Liu, H Ning, S Hu, R Tao, J Chen, W Cai, M Xu, ... Materials 10 (3), 222, 2017 | 12 | 2017 |
| High conductivity and adhesion of Cu-Cr-Zr alloy for TFT gate electrode J Peng, K Lu, S Hu, Z Fang, H Ning, J Wei, Z Zhu, Y Zhou, L Wang, R Yao, ... Applied Sciences 7 (8), 820, 2017 | 11 | 2017 |
| Study of the correlation between the amorphous indium-gallium-zinc oxide film quality and the thin-film transistor performance S Hu, K Lu, H Ning, R Yao, Y Gong, Z Pan, C Guo, J Wang, C Pang, ... Nanomaterials 11 (2), 522, 2021 | 10 | 2021 |
| Improved performance of the amorphous indium-gallium-zinc oxide thin film transistor with Cu-Mo source/drain electrode N Hong-Long, H Shi-Ben, Z Feng, Y Ri-Hui, X Miao, Z Jian-Hua, T Hong, ... ACTA PHYSICA SINICA 64 (12), 2015 | 8 | 2015 |
| High-Performance Inorganically Connected CuInSe2 Nanocrystal Thin-Film Transistors and Integrated Circuits Based on the Solution Process of Colloidal … C Pang, S Hu, C Guo, J Wang, S Zou, Z Pan, J Liu, L Shen, N Bao, H Ning, ... Chemistry of Materials 33 (22), 8775-8785, 2021 | 5 | 2021 |
Ning Hong-Long (甯洪龍，닝홍롱)South China University of Technology，華南理工大學，화남 이공 대학بريد إلكتروني تم التحقق منه على scut.edu.cn
