| Si/SiGe heterostructure parameters for device simulations L Yang, JR Watling, RCW Wilkins, M Borici, JR Barker, A Asenov, S Roy Semiconductor Science and Technology 19 (10), 1174, 2004 | 219 | 2004 |
| The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs JR Watling, L Yang, M Borici, RCW Wilkins, A Asenov, JR Barker, S Roy Solid-State Electronics 48 (8), 1337-1346, 2004 | 48 | 2004 |
| Monte Carlo simulations of III–V MOSFETs K Kalna, M Boriçi, L Yang, A Asenov Semiconductor science and technology 19 (4), S202, 2004 | 20 | 2004 |
| Monte Carlo simulations of sub-100 nm InGaAs MOSFETs for digital applications K Kalna, L Yang, A Asenov Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005 | 19 | 2005 |
| A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs M Boriçi, JR Watling, R Wilkins, L Yang, JR Barker Journal of Computational Electronics 2, 163-167, 2003 | 16 | 2003 |
| Impact of high-/spl kappa/dielectric HfO/sub 2/on the mobility and device performance of sub-100-nm nMOSFETs JR Watling, L Yang, A Asenov, JR Barker, S Roy IEEE Transactions on Device and Materials Reliability 5 (1), 103-108, 2005 | 12 | 2005 |
| Advanced spice modeling for 65nm CMOS technology L Yang, M Cui, J Ma, J He, W Wang, W Wong 2008 9th International Conference on Solid-State and Integrated-Circuit …, 2008 | 9 | 2008 |
| Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs JR Watling, L Yang, M Boriçi, JR Barker, A Asenov Journal of Computational Electronics 2, 475-479, 2003 | 8 | 2003 |
| Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs M Borici, JR Watling, RCW Wilkins, L Yang, JR Barker, A Asenov Semiconductor science and technology 19 (4), S155, 2004 | 7 | 2004 |
| Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications L Yang, A Asenov, M Borici, JR Watling, JR Barker, S Roy, K Elgaid, ... 2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat …, 2003 | 6 | 2003 |
| Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs L Yang, A Asenov, JR Watling, M Boriçi, JR Barker, S Roy, K Elgaid, ... Microelectronics Reliability 44 (7), 1101-1107, 2004 | 4 | 2004 |
| Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks L Yang, JR Watling, F Adam-Lema, A Asenov, JR Barker IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 3 | 2004 |
| Reduced interface roughness in sub-100nm strained Si n-MOSFETs-A Monte Carlo simulation study L Yang, JR Watling, RCW Wilkins, JR Barker, A Asenov | 3 | 2004 |
| Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs L Yang, JR Watling, M Borici, RCW Wilkins, A Asenov, JR Barker, S Roy Journal of Computational Electronics 2, 363-368, 2003 | 3 | 2003 |
| High performance III-V MOSFETs: a dream close to reality? K Kalna, L Yang, A Asenov The 10th IEEE International Symposium on Electron Devices for Microwave and …, 2002 | 3 | 2002 |
| Scaling study of Si/SiGe MODFETs for RF applications L Yang, JR Watling, RCW Wilkins, A Asenov, JR Barker, S Roy, ... The 10th IEEE International Symposium on Electron Devices for Microwave and …, 2002 | 3 | 2002 |
| Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks L Yang, JR Watling, F Adamu-Lema, A Asenov, JR Barker Journal of Computational Electronics 3, 171-175, 2004 | 2 | 2004 |
| Simulation Study of High Performance III-V MOSFETs for Digital Applications K Kalna, L Yang, A Asenov Journal of Computational Electronics 2, 341-345, 2003 | 2 | 2003 |
| Fermi-dirac statistics in monte carlo simulations of ingaas mosfets K Kalna, L Yang, A Asenov Nonequilibrium Carrier Dynamics in Semiconductors: Proceedings of the 14th …, 2006 | 1 | 2006 |
| A study of high linearity Si/SiGe HFETs L Yang, A Asenov, M Boriçi, JR Watling, JR Barker, S Roy, K Elgaid, ... Proceedings of the 14th Workshop on Modelling and Simulation of Electron …, 0 | 1 | |
