| Semi-analytical modeling of short-channel effects in Si and Ge symmetrical double-gate MOSFETs A Tsormpatzoglou, CA Dimitriadis, R Clerc, Q Rafhay, G Pananakakis, ... IEEE Transactions on Electron devices 54 (8), 1943-1952, 2007 | 118 | 2007 |
| Threshold voltage model for short-channel undoped symmetrical double-gate MOSFETs A Tsormpatzoglou, CA Dimitriadis, R Clerc, G Pananakakis, G Ghibaudo IEEE Transactions on Electron Devices 55 (9), 2512-2516, 2008 | 112 | 2008 |
| Semianalytical modeling of short-channel effects in lightly doped silicon trigate MOSFETs A Tsormpatzoglou, CA Dimitriadis, R Clerc, G Pananakakis, G Ghibaudo IEEE transactions on electron devices 55 (10), 2623-2631, 2008 | 81 | 2008 |
| Compact model of drain current in short-channel triple-gate FinFETs N Fasarakis, A Tsormpatzoglou, DH Tassis, I Pappas, K Papathanasiou, ... IEEE transactions on electron devices 59 (7), 1891-1898, 2012 | 66 | 2012 |
| A compact drain current model of short-channel cylindrical gate-all-around MOSFETs A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ... Semiconductor science and technology 24 (7), 075017, 2009 | 66 | 2009 |
| Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ... Microelectronic Engineering 87 (9), 1764-1768, 2010 | 54 | 2010 |
| Analytical unified threshold voltage model of short-channel FinFETs and implementation N Fasarakis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, ... Solid-state electronics 64 (1), 34-41, 2011 | 48 | 2011 |
| Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical double-gate MOSFETs EG Ioannidis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ... IEEE transactions on Electron Devices 58 (2), 433-440, 2010 | 47 | 2010 |
| Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise EG Ioannidis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, F Templier, ... Journal of Applied Physics 108 (10), 2010 | 47 | 2010 |
| Compact modeling of nanoscale trapezoidal FinFETs N Fasarakis, TA Karatsori, A Tsormpatzoglou, DH Tassis, ... IEEE Transactions on Electron Devices 61 (2), 324-332, 2013 | 44 | 2013 |
| Origin of low-frequency noise in the low drain current range of bottom-gate amorphous IGZO thin-film transistors CG Theodorou, A Tsormpatzoglou, CA Dimitriadis, SA Khan, MK Hatalis, ... IEEE electron device letters 32 (7), 898-900, 2011 | 41 | 2011 |
| Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors A Tsormpatzoglou, NA Hastas, N Choi, F Mahmoudabadi, MK Hatalis, ... Journal of Applied Physics 114 (18), 2013 | 36 | 2013 |
| Analytical drain current compact model in the depletion operation region of short-channel triple-gate junctionless transistors TA Oproglidis, A Tsormpatzoglou, DH Tassis, TA Karatsori, S Barraud, ... IEEE Transactions on Electron Devices 64 (1), 66-72, 2016 | 34 | 2016 |
| Symmetrical unified compact model of short-channel double-gate MOSFETs K Papathanasiou, CG Theodorou, A Tsormpatzoglou, DH Tassis, ... Solid-state electronics 69, 55-61, 2012 | 30 | 2012 |
| Experimental characterization of the subthreshold leakage current in triple-gate FinFETs A Tsormpatzoglou, CA Dimitriadis, M Mouis, G Ghibaudo, N Collaert Solid-state electronics 53 (3), 359-363, 2009 | 26 | 2009 |
| Comparative study of active-over-metal and metal-over-active amorphous IGZO thin-film transistors with low-frequency noise measurements A Tsormpatzoglou, NA Hastas, S Khan, M Hatalis, CA Dimitriadis IEEE electron device letters 33 (4), 555-557, 2012 | 25 | 2012 |
| Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, N Collaert, ... Solid-state electronics 57 (1), 31-34, 2011 | 25 | 2011 |
| Deep levels in silicon Schottky junctions with embedded arrays of β‐FeSi2 nanocrystallites A Tsormpatzoglou, DH Tassis, CA Dimitriadis, L Dózsa, NG Galkin, ... Journal of applied physics 100 (7), 2006 | 25 | 2006 |
| Analytical compact model for lightly doped nanoscale ultrathin-body and box SOI MOSFETs with back-gate control TA Karatsori, A Tsormpatzoglou, CG Theodorou, EG Ioannidis, ... IEEE Transactions on Electron Devices 62 (10), 3117-3124, 2015 | 24 | 2015 |
| Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack A Tsormpatzoglou, DH Tassis, CA Dimitriadis, M Mouis, G Ghibaudo, ... Semiconductor science and technology 24 (12), 125001, 2009 | 24 | 2009 |
