| Inkjet-printed molybdenum disulfide and nitrogen-doped graphene active layer high on/off ratio transistors MU Jewel, MA Monne, B Mishra, MY Chen Molecules 25 (5), 1081, 2020 | 20 | 2020 |
| Low temperature atomic layer deposition of zirconium oxide for inkjet printed transistor applications MU Jewel, MDS Mahmud, MA Monne, A Zakhidov, MY Chen RSC advances 9 (4), 1841-1848, 2019 | 16 | 2019 |
| Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm− 1 M Gaevski, S Mollah, K Hussain, J Letton, A Mamun, MU Jewel, ... Applied Physics Express 13 (9), 094002, 2020 | 15 | 2020 |
| Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in H2 and N2 Reaction Environment S Hasan, MU Jewel, SG Karakalos, M Gaevski, I Ahmad Coatings 12 (7), 924, 2022 | 11 | 2022 |
| Photoconductive Thin Films Composed of Environmentally Benign AgBiS2 Nanocrystal Inks Obtained through a Rapid Phase Transfer Process ML Kelley, F Ahmed, SL Abiodun, M Usman, MU Jewel, K Hussain, ... ACS Applied Electronic Materials 3 (4), 1550-1555, 2021 | 9 | 2021 |
| Graphene based 3D printed single patch antenna MA Monne, MU Jewel, Z Wang, MY Chen Low-Dimensional Materials and Devices 2018 10725, 21-26, 2018 | 7 | 2018 |
| Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders MD Alam, M Gaevski, MU Jewel, S Mollah, A Mamun, K Hussain, R Floyd, ... Applied Physics Letters 119 (13), 2021 | 6 | 2021 |
| Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence AK Mohi Uddin Jewel, Md Didarul Alam, Shahab Mollah, Kamal Hussain, Virginia ... Applied Physics Letters 115, 213502, 2019 | 6 | 2019 |
| A comprehensive study of defects in gallium oxide by density functional theory MU Jewel, S Hasan, I Ahmad Computational Materials Science 218, 111950, 2023 | 5 | 2023 |
| MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor S Hasan, MU Jewel, SR Crittenden, D Lee, V Avrutin, Ü Özgür, H Morkoç, ... Crystals 13 (2), 231, 2023 | 4 | 2023 |
| Flexible graphene field effect transistor with graphene oxide dielectric on polyimide substrate MU Jewel, TA Siddiquee, MR Islam 2013 International Conference on Electrical Information and Communication …, 2014 | 4 | 2014 |
| Gas and Air Quality Detection, and Monitoring Using Embedded System for Nanofabrication Facility MU Jewel, B DasGupta, D Valles International Conference of Embedded Systems, Cyber-physical Systems …, 2018 | 2 | 2018 |
| All inkjet-printed high on/off ratio two-dimensional materials field effect transistor MU Jewel, F Mokhtari-Koushyar, RT Chen, MY Chen 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-4, 2018 | 2 | 2018 |
| Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template MU Jewel, S Hasan, SR Crittenden, V Avrutin, Ü Özgür, H Morkoç, ... physica status solidi (a) 220 (11), 2300036, 2023 | 1 | 2023 |
| Thick AlN Templates By MOCVD for the Thermal Management of III-N Electronics A Mamun, K Hussain, MU Jewel, S Mollah, K Huynh, ME Liao, T Bai, ... Electrochemical Society Meeting Abstracts 239, 1075-1075, 2021 | 1 | 2021 |
| Publisher's Note:“Trap characterization in ultra-wide bandgap Al0. 65Ga0. 4N/Al0. 4Ga0. 6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence … MU Jewel, MD Alam, S Mollah, K Hussain, V Wheeler, C Eddy, M Gaevski, ... Applied Physics Letters 115 (24), 2019 | 1 | 2019 |
| Reduction in density of interface traps determined by CV analysis in III-nitride-based MOSHFET structure S Hasan, MU Jewel, SR Crittenden, MG Zakir, NJ Nipa, V Avrutin, ... Applied Physics Letters 124 (11), 2024 | | 2024 |
| Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD MU Jewel, S Hasan, SR Crittenden, V Avrutin, Ü Özgür, H Morkoc, ... Oxide-based Materials and Devices XIV 12422, 18-22, 2023 | | 2023 |
| Gate leakage current and threshold voltage characteristics of β-Ga2O3 passivated AlGaN/GaN based heterojunction field effect transistor S Hasan, MU Jewel, SR Crittenden, D Lee, VS Avrutin, Ü Özgür, ... Gallium Nitride Materials and Devices XVIII 12421, 73-77, 2023 | | 2023 |
| MOCVD-Grown Ga2O3 as a Gate Dielectric on Algan/Gan Based Heterojunction Field Effect Transistor S Hasan, MU Jewel, SR Crittenden, D Lee, V Avrutin, U Ozgur, H Morkoç, ... Preprints, 2023 | | 2023 |
Md Didarul Alamبريد إلكتروني تم التحقق منه على email.sc.edu
