متابعة
Grigory Simin
Grigory Simin
بريد إلكتروني تم التحقق منه على engr.sc.edu
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
An assessment of wide bandgap semiconductors for power devices
JL Hudgins, GS Simin, E Santi, MA Khan
IEEE Transactions on power electronics 18 (3), 907-914, 2003
6592003
Nonresonant detection of terahertz radiation in field effect transistors
W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ...
Journal of Applied Physics 91 (11), 9346-9353, 2002
4882002
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
MA Khan, X Hu, A Tarakji, G Simin, J Yang, R Gaska, MS Shur
Applied Physics Letters 77 (9), 1339-1341, 2000
4302000
–metal–insulator–semiconductor heterostructure field–effect transistors
X Hu, A Koudymov, G Simin, J Yang, MA Khan, A Tarakji, MS Shur, ...
Applied Physics Letters 79 (17), 2832-2834, 2001
3332001
Carrier mobility model for GaN
TT Mnatsakanov, ME Levinshtein, LI Pomortseva, SN Yurkov, GS Simin, ...
Solid-State Electronics 47 (1), 111-115, 2003
3282003
AlGaN/GaN HEMTs on SiC with fT of over 120 GHz
V Kumar, W Lu, R Schwindt, A Kuliev, G Simin, J Yang, MA Khan, ...
IEEE Electron Device Letters 23 (8), 455-457, 2002
3202002
AlGaN/InGaN/GaN double heterostructure field-effect transistor
G Simin, X Hu, A Tarakji, J Zhang, A Koudymov, S Saygi, J Yang, A Khan, ...
Japanese Journal of Applied Physics 40 (11A), L1142, 2001
290*2001
Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
JP Zhang, HM Wang, ME Gaevski, CQ Chen, Q Fareed, JW Yang, ...
Applied physics letters 80 (19), 3542-3544, 2002
2672002
Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
JP Zhang, A Chitnis, V Adivarahan, S Wu, V Mandavilli, R Pachipulusu, ...
Applied physics letters 81 (26), 4910-4912, 2002
2582002
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
X Hu, G Simin, J Yang, MA Khan, R Gaska, MS Shur
Electronics Letters 36 (8), 753-754, 2000
2532000
The 1.6-kv algan/gan hfets
N Tipirneni, A Koudymov, V Adivarahan, J Yang, G Simin, MA Khan
IEEE Electron Device Letters 27 (9), 716-718, 2006
2212006
Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
E Kuokstis, JW Yang, G Simin, MA Khan, R Gaska, MS Shur
Applied Physics Letters 80 (6), 977-979, 2002
1972002
Lattice and energy band engineering in AlInGaN/GaN heterostructures
MA Khan, JW Yang, G Simin, R Gaska, MS Shur, HC zur Loye, ...
Applied Physics Letters 76 (9), 1161-1163, 2000
1912000
Polarization effects in photoluminescence of - and -plane GaN/AlGaN multiple quantum wells
E Kuokstis, CQ Chen, ME Gaevski, WH Sun, JW Yang, G Simin, ...
Applied Physics Letters 81 (22), 4130-4132, 2002
1642002
Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
G Simin, A Koudymov, A Tarakji, X Hu, J Yang, MA Khan, MS Shur, ...
Applied Physics Letters 79 (16), 2651-2653, 2001
1642001
High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
E Frayssinet, W Knap, P Lorenzini, N Grandjean, J Massies, ...
Applied Physics Letters 77 (16), 2551-2553, 2000
1632000
Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates
JW Yang, A Lunev, G Simin, A Chitnis, M Shatalov, MA Khan, ...
Applied Physics Letters 76 (3), 273-275, 2000
1612000
Field-plate engineering for HFETs
S Karmalkar, MS Shur, G Simin, MA Khan
IEEE Transactions on electron devices 52 (12), 2534-2540, 2005
1522005
New developments in gallium nitride and the impact on power electronics
MA Khan, G Simin, SG Pytel, A Monti, E Santi, JL Hudgins
2005 IEEE 36th Power Electronics Specialists Conference, 15-26, 2005
1492005
SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs
G Simin, A Koudymov, H Fatima, J Zhang, J Yang, MA Khan, X Hu, ...
IEEE Electron Device Letters 23 (8), 458-460, 2002
1432002
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مقالات 1–20