Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties Y Nam, HO Kim, SH Cho, SHK Park
RSC advances 8 (10), 5622-5628, 2018
76 2018 Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor K Yim, Y Youn, M Lee, D Yoo, J Lee, SH Cho, S Han
NPJ Computational Materials 17 (4), http://www.nature.com/articles/s41524-01, 2018
74 2018 Solution-processed indium-free ZnO/SnO 2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities S Nam, JH Yang, SH Cho, JH Choi, OS Kwon, ES Park, SJ Lee, KI Cho, ...
Journal of Materials Chemistry C 4 (47), 11298-11304, 2016
47 2016 Thin film transistor array panel JW Park, DH Kim, YJ Choi, DH Lee, SH Cho
US Patent 9,099,438, 2015
40 2015 Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 for High-Speed Operation JH Yang, JH Choi, SH Cho, JE Pi, HO Kim, CS Hwang, K Park, S Yoo
IEEE Electron Device Letters 39 (4), 508-511, 2018
39 2018 Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film … Y Nam, HO Kim, SH Cho, CS Hwang, T Kim, S Jeon, SH Ko Park
Journal of Information Display 17 (2), 65-71, 2016
37 2016 High‐Performance Amorphous Multilayered ZnO‐SnO2 Heterostructure Thin‐Film Transistors: Fabrication and Characteristics SJ Lee, CS Hwang, JE Pi, JH Yang, CW Byun, HY Chu, KI Cho, SH Cho
Etri journal 37 (6), 1135-1142, 2015
37 2015 Highly stable, high mobility Al: SnZnInO back-channel etch thin-film transistor fabricated using PAN-based wet etchant for source and drain patterning SH Cho, JB Ko, MK Ryu, JH Yang, HI Yeom, SK Lim, CS Hwang, ...
IEEE Transactions on Electron Devices 62 (11), 3653-3657, 2015
31 2015 InZnO/AlSnZnInO bilayer oxide thin-film transistors with high mobility and high uniformity JH Choi, JH Yang, S Nam, JE Pi, HO Kim, OS Kwon, ES Park, CS Hwang, ...
IEEE Electron Device Letters 37 (10), 1295-1298, 2016
30 2016 Thin film transistor, display device including the same and manufacturing method thereof CHO Sung-Haeng, KH Jeong, J Song, JH Kim, HJ Kim, SH Shim
US Patent 7,915,689, 2011
29 2011 Laser induced fluorescence and resonant two-photon ionization spectroscopy of jet-cooled 1-hydroxy-9, 10-anthraquinone SH Cho, H Huh, HM Kim, CI Kim, NJ Kim, SK Kim
The Journal of chemical physics 122 (3), 2005
27 2005 Wiring, thin film transistor, thin film transistor panel and methods for manufacturing the same JW Park, CHO Sung-Haeng, KS Kim, DY Cho
US Patent 9,245,966, 2016
26 2016 Spectroscopy and energy disposal dynamics of phthalocyanine–Arn (n= 1, 2) complexes generated by hyperthermal pulsed nozzle source SH Cho, M Yoon, SK Kim
Chemical Physics Letters 326 (1-2), 65-72, 2000
23 2000 Thin film transistor array panel and manufacturing method thereof DH Kim, YH Khang, DH Lee, SH Park, SH Yu, CK Kim, YS Lee, SH Cho, ...
US Patent 9,252,226, 2016
22 2016 Display substrate, liquid crystal display device including the same, and method of repairing the same DS Kim, SH Cho
US Patent 7,911,552, 2011
22 2011 Display substrate and method of manufacturing the same JW Park, DH Lee, CHO Sung-Haeng, WG Lee, HY Ryu, YJ Choi
US Patent 8,598,577, 2013
21 2013 Transparent Fingerprint Sensor System for Large Flat Panel Display W Seo, JE Pi, SH Cho, SY Kang, SD Ahn, CS Hwang, HS Jeon, JU Kim, ...
Sensors 18 (1), 293-, 2018
20 2018 Effect of a rapid thermal annealing process on the electrical properties of an aluminum‐doped indium zinc tin oxide thin film transistor Y Nam, JH Yang, P Jeong, OS Kwon, JE Pi, SH Cho, CS Hwang, J Ahn, ...
physica status solidi (a) 214 (1), 1600490, 2017
20 2017 Characterization of ZnO–SnO2 nanocomposite thin films deposited by pulsed laser ablation and their field effect electronic properties SJ Lee, CS Hwang, JE Pi, MK Ryu, H Oh, SH Cho, JH Yang, SHK Park, ...
Materials Letters 122, 94-97, 2014
20 2014 Impact of transient currents caused by alternating drain stress in oxide semiconductors HJ Lee, SH Cho, K Abe, MJ Lee, M Jung
Scientific Reports 7 (1), 9782, 2017
19 2017