An AlN/Al0. 85Ga0. 15N high electron mobility transistor AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
Applied Physics Letters 109 (3), 2016
141 2016 Compact modeling of total ionizing dose and aging effects in MOS technologies IS Esqueda, HJ Barnaby, MP King
IEEE Transactions on Nuclear Science 62 (4), 1501-1515, 2015
133 2015 Vertical GaN power diodes with a bilayer edge termination JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ...
IEEE Transactions on Electron Devices 63 (1), 419-425, 2015
125 2015 High voltage and high current density vertical GaN power diodes AM Armstrong, AA Allerman, AJ Fischer, MP King, MS Van Heukelom, ...
Electronics Letters 52 (13), 1170-1171, 2016
95 2016 Electron-induced single-event upsets in static random access memory MP King, RA Reed, RA Weller, MH Mendenhall, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 60 (6), 4122-4129, 2013
80 2013 The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs MP King, RA Reed, RA Weller, MH Mendenhall, RD Schrimpf, ML Alles, ...
IEEE Transactions on Nuclear Science 57 (6), 3169-3175, 2010
79 2010 Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance MP King, X Wu, M Eller, S Samavedam, MR Shaneyfelt, AI Silva, ...
IEEE Transactions on Nuclear Science 64 (1), 285-292, 2016
78 2016 Physical processes and applications of the Monte Carlo radiative energy deposition (MRED) code RA Reed, RA Weller, MH Mendenhall, DM Fleetwood, KM Warren, ...
IEEE Transactions on Nuclear Science 62 (4), 1441-1461, 2015
77 2015 Heavy-ion-induced current transients in bulk and SOI FinFETs F El-Mamouni, EX Zhang, DR Ball, B Sierawski, MP King, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 59 (6), 2674-2681, 2012
59 2012 Technology scaling comparison of flip-flop heavy-ion single-event upset cross sections NJ Gaspard, S Jagannathan, ZJ Diggins, MP King, SJ Wen, R Wong, ...
IEEE Transactions on Nuclear Science 60 (6), 4368-4373, 2013
54 2013 Charge generation by secondary particles from nuclear reactions in BEOL materials NA Dodds, RA Reed, MH Mendenhall, RA Weller, MA Clemens, PE Dodd, ...
IEEE Transactions on Nuclear Science 56 (6), 3172-3179, 2009
47 2009 SEL-sensitive area mapping and the effects of reflection and diffraction from metal lines on laser SEE testing NA Dodds, NC Hooten, RA Reed, RD Schrimpf, JH Warner, NJH Roche, ...
IEEE Transactions on Nuclear Science 60 (4), 2550-2558, 2013
41 2013 Selection of well contact densities for latchup-immune minimal-area ICs NA Dodds, JM Hutson, JA Pellish, RA Reed, HS Kim, MD Berg, ...
IEEE Transactions on Nuclear Science 57 (6), 3575-3581, 2010
37 2010 Radiation response of AlGaN-channel HEMTs MJ Martinez, MP King, AG Baca, AA Allerman, AA Armstrong, BA Klein, ...
IEEE Transactions on Nuclear Science 66 (1), 344-351, 2018
32 2018 TID and Displacement Damage Resilience of 1T1R Resistive Memories SL Weeden-Wright, WG Bennett, NC Hooten, EX Zhang, MW McCurdy, ...
IEEE Transactions on Nuclear Science 61 (6), 2972-2978, 2014
32 2014 Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs JM Trippe, RA Reed, RA Austin, BD Sierawski, RA Weller, ...
IEEE Transactions on Nuclear Science 62 (6), 2709-2716, 2015
30 2015 Single particle displacement damage in silicon EC Auden, RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 59 (6), 3054-3061, 2012
30 2012 Performance and breakdown characteristics of irradiated vertical power GaN PiN diodes MP King, AM Armstrong, JR Dickerson, G Vizkelethy, RM Fleming, ...
IEEE Transactions on Nuclear Science 62 (6), 2912-2918, 2015
29 2015 Single-event characterization of 16 nm finfet xilinx ultrascale+ devices with heavy ion and neutron irradiation DS Lee, M King, W Evans, M Cannon, A Pérez-Celis, J Anderson, ...
2018 IEEE Radiation Effects Data Workshop (REDW), 1-8, 2018
28 2018 Al0. 3Ga0. 7N PN diode with breakdown voltage> 1600 V AA Allerman, AM Armstrong, AJ Fischer, JR Dickerson, MH Crawford, ...
Electronics Letters 52 (15), 1319-1321, 2016
27 2016