| Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system S Fukami, C Zhang, S DuttaGupta, A Kurenkov, H Ohno Nature materials 15 (5), 535-541, 2016 | 1068 | 2016 |
| A spin–orbit torque switching scheme with collinear magnetic easy axis and current configuration S Fukami, T Anekawa, C Zhang, H Ohno nature nanotechnology 11 (7), 621-625, 2016 | 658 | 2016 |
| Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO C Zhang, S Fukami, H Sato, F Matsukura, H Ohno Applied Physics Letters 107 (1), 2015 | 221 | 2015 |
| Artificial neuron and synapse realized in an antiferromagnet/ferromagnet heterostructure using dynamics of spin–orbit torque switching A Kurenkov, S DuttaGupta, C Zhang, S Fukami, Y Horio, H Ohno Advanced Materials 31 (23), 1900636, 2019 | 167 | 2019 |
| Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis C Zhang, M Yamanouchi, H Sato, S Fukami, S Ikeda, F Matsukura, ... Journal of Applied Physics 115 (17), 2014 | 109 | 2014 |
| Magnetoresistance effect element and magnetic memory device S Fukami, C Zhang, T Anekawa, H Ohno, T Endoh US Patent 9,941,468, 2018 | 102 | 2018 |
| Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F ... Applied Physics Letters 109, 192405, 2016 | 92 | 2016 |
| Spin-orbit torques in high-resistivity-W/CoFeB/MgO Y Takeuchi, C Zhang, A Okada, H Sato, S Fukami, H Ohno Applied Physics Letters 112 (19), 2018 | 90 | 2018 |
| Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures A Kurenkov, C Zhang, S DuttaGupta, S Fukami, H Ohno Applied Physics Letters 110 (9), 2017 | 89 | 2017 |
| Adiabatic spin-transfer-torque-induced domain wall creep in a magnetic metal S DuttaGupta, S Fukami, C Zhang, H Sato, M Yamanouchi, F Matsukura, ... Nature Physics 12 (4), 333-336, 2016 | 63 | 2016 |
| First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400° C thermal tolerance by canted SOT structure and its advanced patterning … H Honjo, TVA Nguyen, T Watanabe, T Nasuno, C Zhang, T Tanigawa, ... 2019 IEEE International Electron Devices Meeting (IEDM), 28.5. 1-28.5. 4, 2019 | 59 | 2019 |
| Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO C Zhang, M Yamanouchi, H Sato, S Fukami, S Ikeda, F Matsukura, ... Appl. Phys. Lett 103 (26), 1-4, 2013 | 47 | 2013 |
| Dual-port SOT-MRAM achieving 90-MHz read and 60-MHz write operations under field-assistance-free condition M Natsui, A Tamakoshi, H Honjo, T Watanabe, T Nasuno, C Zhang, ... IEEE Journal of Solid-State Circuits 56 (4), 1116-1128, 2020 | 33 | 2020 |
| Spin-orbit torque induced magnetization switching in Co/Pt multilayers B Jinnai, C Zhang, A Kurenkov, M Bersweiler, H Sato, S Fukami, H Ohno Applied Physics Letters 111 (10), 2017 | 33 | 2017 |
| A sub-ns three-terminal spin-orbit torque induced switching device S Fukami, T Anekawa, A Ohkawara, C Zhang, H Ohno 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 32 | 2016 |
| Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque C Zhang, Y Takeuchi, S Fukami, H Ohno Applied Physics Letters 118 (9), 2021 | 29 | 2021 |
| Spin-pumping-free determination of spin-orbit torque efficiency from spin-torque ferromagnetic resonance A Okada, Y Takeuchi, K Furuya, C Zhang, H Sato, S Fukami, H Ohno Physical Review Applied 12 (1), 014040, 2019 | 27 | 2019 |
| Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance Y Takahashi, Y Takeuchi, C Zhang, B Jinnai, S Fukami, H Ohno Applied Physics Letters 114 (1), 2019 | 23 | 2019 |
| Spin-orbit torques and Dzyaloshinskii-Moriya interaction in PtMn/[Co/Ni] heterostructures S DuttaGupta, T Kanemura, C Zhang, A Kurenkov, S Fukami, H Ohno Applied Physics Letters 111 (18), 2017 | 20 | 2017 |
| Dual-port field-free SOT-MRAM achieving 90-MHz read and 60-MHz write operations under 55-nm CMOS technology and 1.2-V supply voltage M Natsui, A Tamakoshi, H Honjo, T Watanabe, T Nasuno, C Zhang, ... 2020 IEEE Symposium on VLSI Circuits, 1-2, 2020 | 18 | 2020 |
SAMIK DUTTAGUPTAAssociate Professor (E), Saha Institute of Nuclear PhysicsVerified email at saha.ac.in
