Silicon nanowires based resistors as gas sensors F Demami, L Ni, R Rogel, AC Salaun, L Pichon Sensors and Actuators B: Chemical 170, 158-162, 2012 | 78 | 2012 |
Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor G Wenga, E Jacques, AC Salaün, R Rogel, L Pichon, F Geneste Biosensors and Bioelectronics 40 (1), 141-146, 2013 | 59 | 2013 |
Growth-in-place deployment of in-plane silicon nanowires L Yu, W Chen, B O’Donnell, G Patriarche, S Bouchoule, P Pareige, ... Applied Physics Letters 99 (20), 2011 | 45 | 2011 |
Analysis of the activation energy of the subthreshold current in laser-and solid-phase-crystallized polycrystalline silicon thin-film transistors L Pichon, A Mercha, R Carin, O Bonnaud, T Mohammed-Brahim, Y Helen, ... Applied Physics Letters 77 (4), 576-578, 2000 | 44 | 2000 |
Performance of thin film transistors on unhydrogenated in-situ doped polysilicon films obtained by solid phase crystallization K Mourgues, F Raoult, L Pichon, T Mohammed-Brahim, D Briand, ... MRS Online Proceedings Library (OPL) 471, 155, 1997 | 39 | 1997 |
Determination of interface state distribution in polysilicon thin film transistors from low-frequency noise measurements: Application to analysis of electrical properties L Pichon, A Boukhenoufa, C Cordier, B Cretu Journal of applied physics 100 (5), 2006 | 31 | 2006 |
Silicon nanowires synthesis for chemical sensor applications F Demami, L Ni, R Rogel, AC Salaun, L Pichon Procedia Engineering 5, 351-354, 2010 | 30 | 2010 |
New approaches for investigating paintings by ion beam techniques L Beck, L de Viguerie, P Walter, L Pichon, PC Gutiérrez, J Salomon, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2010 | 29 | 2010 |
Low temperature (≦ 600° C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays L Pichon, F Raoult, K Mourgues, K Kis-Sion, T Mohammed-Brahim, ... Thin Solid Films 296 (1-2), 133-136, 1997 | 28 | 1997 |
Fabrication of polycrystalline silicon nanowires using conventional UV lithography F Demami, L Pichon, R Rogel, AC Salaün IOP Conference Series: Materials Science and Engineering 6 (1), 012014, 2009 | 27 | 2009 |
Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization L Pichon, K Mourgues, F Raoult, T Mohammed-Brahim, K Kis-Sion, ... Semiconductor science and technology 16 (11), 918, 2001 | 26 | 2001 |
Current crowding and noise in polycrystalline silicon thin film transistors A Mercha, LKJ Vandamme, L Pichon, R Carin, O Bonnaud Journal of Applied Physics 90 (8), 4019-4026, 2001 | 25 | 2001 |
Bacteria electrical detection using 3D silicon nanowires based resistor B Le Borgne, L Pichon, AC Salaun, B Le Bihan, A Jolivet-Gougeon, ... Sensors and Actuators B: Chemical 273, 1794-1799, 2018 | 23 | 2018 |
Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process D Briand, M Sarret, F Le Bihan, O Bonnaud, L Pichon Materials science and technology 11 (11), 1207-1209, 1995 | 23 | 1995 |
Characterization of gold leaves on Greek terracotta figurines: A PIXE-RBS study C Fourdrin, SP Camagna, C Pacheco, M Radepont, Q Lemasson, ... Microchemical Journal 126, 446-453, 2016 | 21 | 2016 |
VLS silicon nanowires based resistors for chemical sensor applications L Ni, E Jacques, R Rogel, AC Salaün, L Pichon, G Wenga Procedia Engineering 47, 240-243, 2012 | 21 | 2012 |
Raman spectrum of Si nanowires: temperature and phonon confinement effects J Anaya, A Torres, V Hortelano, J Jiménez, AC Prieto, A Rodríguez, ... Applied Physics A 114, 1321-1331, 2014 | 20 | 2014 |
Fabrication and properties of low-temperature (⩽600 °C) processed -type nanocrystalline -type crystalline Si heterojunction diodes S Kerdiles, A Berthelot, R Rizk, L Pichon Applied physics letters 80 (20), 3772-3774, 2002 | 20 | 2002 |
Conduction behaviour of low-temperature (≤ 600° C) polysilicon TFTs with an in situ drain doping level L Pichon, F Raoult, O Bonnaud, H Sehil, D Briand Solid-state electronics 38 (8), 1515-1521, 1995 | 20 | 1995 |
Variable range hopping conduction in N-and P-type in situ doped polycrystalline silicon nanowires L Pichon, E Jacques, R Rogel, AC Salaun, F Demami Semiconductor science and technology 28 (2), 025002, 2012 | 18 | 2012 |