Bound exciton and donor–acceptor pair recombinations in ZnO BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ...
physica status solidi (b) 241 (2), 231-260, 2004
1986 2004 Optical properties of the nitrogen acceptor in epitaxial ZnO A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ...
physica status solidi (b) 234 (3), R7-R9, 2002
198 2002 Excited-state carrier lifetime in single-walled carbon nanotubes S Reich, M Dworzak, A Hoffmann, C Thomsen, MS Strano
Physical Review B 71 (3), 033402, 2005
126 2005 Magneto-optical properties of bound excitons in ZnO AV Rodina, M Strassburg, M Dworzak, U Haboeck, A Hoffmann, A Zeuner, ...
Physical Review B 69 (12), 125206, 2004
93 2004 Recombination dynamics of localized excitons in InGaN quantum dots T Bartel, M Dworzak, M Strassburg, A Hoffmann, A Strittmatter, D Bimberg
Applied physics letters 85 (11), 1946-1948, 2004
79 2004 Lateral redistribution of excitons in CdSe/ZnSe quantum dots M Strassburg, M Dworzak, H Born, R Heitz, A Hoffmann, M Bartels, ...
Applied physics letters 80 (3), 473-475, 2002
70 2002 Identification of bound exciton complexes in ZnO M Strassburg, A Rodina, M Dworzak, U Haboeck, IL Krestnikov, ...
physica status solidi (b) 241 (3), 607-611, 2004
55 2004 Reconciliation of luminescence and Hall measurements on the ternary semiconductor CuGaSe2 S Siebentritt, I Beckers, T Riemann, J Christen, A Hoffmann, M Dworzak
Applied Physics Letters 86 (9), 2005
43 2005 Lateral carrier transfer in S Rodt, V Türck, R Heitz, F Guffarth, R Engelhardt, UW Pohl, M Straßburg, ...
Physical Review B 67 (23), 235327, 2003
30 2003 Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells L Geelhaar, M Galluppi, G Jaschke, R Averbeck, H Riechert, T Remmele, ...
Applied physics letters 88 (1), 2006
28 2006 Luminescence and Raman spectroscopy on MgB2 PM Rafailov, M Dworzak, C Thomsen
Solid state communications 122 (7-8), 455-458, 2002
22 2002 Analysis of quantum dot formation and exciton localisation in the (Zn, Cd)(S, Se) system M Strassburg, J Christen, M Dworzak, R Heitz, A Hoffmann, M Bartels, ...
physica status solidi (b) 229 (1), 529-532, 2002
8 2002 Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate M Dworzak, T Stempel, A Hoffmann, G Franssen, S Grzanka, T Suski, ...
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 892, 825, 2006
5 2006 Optical properties of InGaN quantum dots M Dworzak, T Bartel, M Straßburg, IL Krestnikov, A Hoffmann, R Seguin, ...
Superlattices and Microstructures 36 (4-6), 763-772, 2004
5 2004 Redistribution of localised excitons in CdSe/ZnSe quantum dot structures M Strassburg, M Dworzak, R Heitz, A Hoffmann, J Christen, D Schikora
Materials Science and Engineering: B 88 (2-3), 302-306, 2002
5 2002 Resonant Gain in ZnSe Structures with Stacked CdSe Islands Grown in Stranski‐Krastanov Mode M Strassburg, M Dworzak, A Hoffmann, R Heitz, UW Pohl, D Bimberg, ...
physica status solidi (a) 180 (1), 281-285, 2000
4 2000 Optical properties of InGaN/GaN quantum wells on sapphire and bulk GaN substrate M Dworzak, T Stempel, A Hoffmann, G Franssen, S Grzanka, T Suski, ...
physica status solidi c 3 (6), 2078-2081, 2006
3 2006 Relaxationsmechanismen in optisch angeregten ZnCdSe-Quantenpunktstrukturen M Dworzak
Diplomarbeit, TU-Berlin, 2002
3 2002 Gain mechanisms in field‐free InGaN layers grown on sapphire and bulk GaN substrate M Dworzak, T Stempel Pereira, M Bügler, A Hoffmann, G Franssen, ...
physica status solidi (RRL)–Rapid Research Letters 1 (4), 141-143, 2007
2 2007 Dephasing and energy relaxation processes in self‐assembled In (Ga) As/GaAs quantum dots M Dworzak, P Zimmer, H Born, A Hoffmann
AIP Conference Proceedings 772 (1), 633-634, 2005
1 2005 
