| Magnetic tunnel junctions JGJ Zhu, C Park Materials today 9 (11), 36-45, 2006 | 509 | 2006 |
| Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques M Wang, W Cai, D Zhu, Z Wang, J Kan, Z Zhao, K Cao, Z Wang, Y Zhang, ... Nature electronics 1 (11), 582-588, 2018 | 349 | 2018 |
| Co∕ Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy JH Park, C Park, T Jeong, MT Moneck, NT Nufer, JG Zhu Journal of Applied Physics 103 (7), 2008 | 170 | 2008 |
| Magnetic etch-stop layer for magnetoresistive read heads M Pakala, R Xiao, C Park US Patent 8,611,055, 2013 | 164 | 2013 |
| Method and system for providing a read sensor having a low magnetostriction free layer Q Leng, C Park, Y Guo, C Kaiser, M Pakala, S Mao US Patent 8,194,365, 2012 | 163 | 2012 |
| Method for providing a magnetic recording transducer C Park, Q Leng, M Pakala US Patent 8,381,391, 2013 | 159 | 2013 |
| Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface M Pakala, C Park US Patent 8,559,141, 2013 | 157 | 2013 |
| Method and system for providing a magnetic transducer having improved shield-to-shield spacing C Park, Q Leng, S Oh, M Pakala US Patent 8,537,502, 2013 | 150 | 2013 |
| Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) C Park, K Lee, SH Kang US Patent 9,379,314, 2016 | 127 | 2016 |
| Cooking oven R Allera, G Franzetti, M Maritan, S Sanna, M Maroni, D Ward, G Rocco, ... US Patent 6,545,251, 2003 | 126* | 2003 |
| Interfacial and annealing effects on magnetic properties of CoFeB thin films YH Wang, WC Chen, SY Yang, KH Shen, C Park, MJ Kao, MJ Tsai Journal of applied physics 99 (8), 2006 | 121 | 2006 |
| Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang US Patent 9,634,237, 2017 | 106 | 2017 |
| Annealing effects on structural and transport properties of rf-sputtered CoFeB∕ MgO∕ CoFeB magnetic tunnel junctions C Park, JG Zhu, MT Moneck, Y Peng, DE Laughlin Journal of applied physics 99 (8), 2006 | 100 | 2006 |
| A study on practically unlimited endurance of STT-MRAM JJ Kan, C Park, C Ching, J Ahn, Y Xie, M Pakala, SH Kang IEEE Transactions on Electron Devices 64 (9), 3639-3646, 2017 | 89 | 2017 |
| Magnetoresistance of polycrystalline Fe3O4 films prepared by reactive sputtering at room temperature C Park, Y Peng, JG Zhu, DE Laughlin, RM White Journal of applied physics 97 (10), 2005 | 81 | 2005 |
| Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch Y Lu, C Park, WC Chen US Patent 9,269,893, 2016 | 75 | 2016 |
| Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015 | 71 | 2015 |
| Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM M Gottwald, JJ Kan, K Lee, X Zhu, C Park, SH Kang Applied Physics Letters 106 (3), 2015 | 69 | 2015 |
| Spin-transfer switching in MgO-based magnetic tunnel junctions Z Diao, M Pakala, A Panchula, Y Ding, D Apalkov, LC Wang, E Chen, ... Journal of Applied Physics 99 (8), 2006 | 65* | 2006 |
| Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance JJ Kan, C Park, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 27.4. 1-27.4. 4, 2016 | 64 | 2016 |
