Na Ren
Title
Cited by
Cited by
Year
A SiC-based high power density single-phase inverter with in-series and in-parallel power decoupling method
X Lyu, N Ren, Y Li, D Cao
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 893-901, 2016
622016
Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes
R Na, W Jue, S Kuang
IEEE Transactions on Electron Devices 61 (7), 2014
482014
An Analytical Model With 2-D Effects for 4H-SiC Trenched Junction Barrier Schottky Diodes
R Na, S Kuang
IEEE Transactions on Electron Devices 61 (12), 2014
302014
A 10kV/200A SiC MOSFET module with series-parallel hybrid connection of 1200V/50A dies
Q Xiao, Y Yan, X Wu, N Ren, K Sheng
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
212015
Gate drive investigations of IGBT modules with SiC-Schottky freewheeling diodes
N Ren, K Sheng, J Zhang, F Peng
2013 IEEE Energy Conversion Congress and Exposition, 2871-2876, 2013
142013
Investigation on single pulse avalanche failure of 900V SiC MOSFETs
N Ren, H Hu, KL Wang, Z Zuo, R Li, K Sheng
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
92018
Investigation of 1200 V SiC MOSFETs’ surge reliability
H Li, J Wang, N Ren, H Xu, K Sheng
Micromachines 10 (7), 485, 2019
82019
1.2-kV 4H-SiC merged PiN Schottky diode with improved surge current capability
J Wu, N Ren, H Wang, K Sheng
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019
82019
Optimization of high-density and high-efficiency switched-tank converter for data center applications
X Lyu, Y Li, N Ren, C Nan, D Cao, S Jiang
IEEE Transactions on Industrial Electronics 67 (2), 1626-1637, 2019
82019
Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT
N Ren, H Hu, X Lyu, J Wu, H Xu, R Li, Z Zuo, K Wang, K Sheng
Solid-State Electronics 152, 33-40, 2019
82019
Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions
N Ren, KL Wang, J Wu, H Xu, K Sheng
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
62019
Surge capability of 1.2 kV SiC diodes with high-temperature implantation
H Xu, J Sun, J Cui, J Wu, H Wang, S Yang, N Ren, K Sheng
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
42018
A novel 4H-SiC pinched barrier rectifier
N Ren, KL Wang, Z Zuo, R Li, K Sheng
2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 1950-1957, 2017
32017
Silicon carbide pinched barrier rectifier (PBR)
C Cai, L Zhang, N Ren, K Sheng
2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013
32013
Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module
M Zhang, N Ren, Q Guo, X Zhu, J Zhang, K Sheng
Micromachines 11 (1), 5, 2020
22020
Design and characterization of area-efficient trench termination for 4H-SiC devices
H Wang, J Wang, L Liu, N Ren, J Wu, C Wang, S Yang, K Sheng
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019
22019
Design and Experimental Study of 1.2 kV 4H-SiC Merged PiN Schottky Diode
J Wu, N Ren, K Sheng
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
22019
Improving surge current capability of SiC merged PiN Schottky diode by adding plasma spreading layers
N Ren, J Wu, L Liu, K Sheng
IEEE Transactions on Power Electronics, 2020
12020
4H-SiC Super-Junction JFET: Design and Experimental Demonstration
H Wang, C Wang, B Wang, N Ren, K Sheng
IEEE Electron Device Letters 41 (3), 445-448, 2020
12020
Instantaneous Pulse Power Compensator for High-Density Single-Phase Inverters
X Lyu, N Ren, D Cao
IEEE Transactions on Power Electronics 34 (11), 10776-10785, 2019
12019
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Articles 1–20