Kamal Hussain
Kamal Hussain
بريد إلكتروني تم التحقق منه على email.sc.edu
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2Gate-Insulator and Zr-Based Ohmic Contacts
X Hu, S Hwang, K Hussain, R Floyd, S Mollah, F Asif, G Simin, A Khan
IEEE Electron Device Letters 39 (10), 1568-1571, 2018
252018
Al0. 75Ga0. 25N/Al0. 6Ga0. 4N heterojunction field effect transistor with fT of 40 GHz
H Xue, CH Lee, K Hussian, T Razzak, M Abdullah, Z Xia, SH Sohel, ...
Applied Physics Express 12 (6), 066502, 2019
152019
BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ...
Applied Physics Letters 116 (2), 023507, 2020
122020
Bulk-like Intrinsic Phonon Thermal Conductivity of Micrometer-Thick AlN Films
YR Koh, Z Cheng, A Mamun, MS Bin Hoque, Z Liu, T Bai, K Hussain, ...
ACS Applied Materials & Interfaces 12 (26), 29443-29450, 2020
102020
Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm
H Xue, K Hussain, T Razzak, M Gaevski, SH Sohel, S Mollah, V Talesara, ...
IEEE Electron Device Letters 41 (5), 677-680, 2020
92020
Current collapse in high-Al channel AlGaN HFETs
S Mollah, M Gaevski, K Hussain, A Mamun, R Floyd, X Hu, ...
Applied Physics Express 12 (7), 074001, 2019
92019
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric
S Mollah, M Gaevski, MVS Chandrashekhar, X Hu, V Wheeler, K Hussain, ...
Semiconductor Science and Technology 34 (12), 125001, 2019
82019
Photonics integrated circuits using Al x Ga1− x N based UVC light-emitting diodes, photodetectors and waveguides
R Floyd, K Hussain, A Mamun, M Gaevski, G Simin, ...
Applied Physics Express 13 (2), 022003, 2020
72020
High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1− x N channel MOSHFET with drain current 0.48 A mm− 1 and threshold voltage+ 3.6 V
S Mollah, K Hussain, A Mamun, M Gaevski, G Simin, ...
Applied Physics Express 14 (1), 014003, 2021
62021
Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm− 1
M Gaevski, S Mollah, K Hussain, J Letton, A Mamun, MU Jewel, ...
Applied Physics Express 13 (9), 094002, 2020
62020
High in-plane thermal conductivity of aluminum nitride thin films
MSB Hoque, YR Koh, JL Braun, A Mamun, Z Liu, K Huynh, ME Liao, ...
ACS nano, 2021
52021
An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays
R Floyd, M Gaevski, MD Alam, S Islam, K Hussain, A Mamun, S Mollah, ...
Applied Physics Express 14 (1), 014002, 2020
42020
High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer …
S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ...
physica status solidi (a) 217 (7), 1900802, 2020
42020
Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes
R Floyd, M Gaevski, K Hussain, A Mamun, MVS Chandrashekhar, ...
Applied Physics Express 14 (8), 084002, 2021
32021
Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs
S Mollah, M Gaevski, K Hussain, A Mamun, MVS Chandrashekhar, ...
Applied Physics Letters 117 (23), 232105, 2020
32020
An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices
R Floyd, K Hussain, A Mamun, M Gaevski, G Simin, ...
physica status solidi (a) 217 (7), 1900801, 2020
32020
Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence
MU Jewel, MD Alam, S Mollah, K Hussain, V Wheeler, C Eddy, M Gaevski, ...
Applied Physics Letters 115 (21), 213502, 2019
2*2019
High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V
H Xue, K Hussain, V Talesara, T Razzak, M Gaevski, S Mollah, S Rajan, ...
physica status solidi (RRL)–Rapid Research Letters, 2000576, 2021
12021
Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate
S Hasan, A Mamun, K Hussain, M Gaevski, I Ahmad, A Khan
Journal of Materials Research, 1-10, 2021
2021
Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders
MD Alam, M Gaevski, MU Jewel, S Mollah, A Mamun, K Hussain, R Floyd, ...
Applied Physics Letters 119 (13), 132106, 2021
2021
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مقالات 1–20