Valeria Bragaglia
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Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials
V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ...
Scientific reports 6 (1), 23843, 2016
Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate
JE Boschker, J Momand, V Bragaglia, R Wang, K Perumal, A Giussani, ...
Nano letters 14 (6), 3534-3538, 2014
Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices
B Casarin, A Caretta, J Momand, BJ Kooi, MA Verheijen, V Bragaglia, ...
Scientific reports 6 (1), 22353, 2016
Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights
M Halter, L Bégon-Lours, V Bragaglia, M Sousa, BJ Offrein, S Abel, ...
ACS applied materials & interfaces 12 (15), 17725-17732, 2020
Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices
R Wang, V Bragaglia, JE Boschker, R Calarco
Crystal Growth & Design 16 (7), 3596-3601, 2016
Far-infrared and Raman spectroscopy investigation of phonon modes in amorphous and crystalline epitaxial GeTe-Sb2Te3 alloys
V Bragaglia, K Holldack, JE Boschker, F Arciprete, E Zallo, T Flissikowski, ...
Scientific reports 6 (1), 1-7, 2016
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films
AM Mio, SMS Privitera, V Bragaglia, F Arciprete, C Bongiorno, R Calarco, ...
Nanotechnology 28 (6), 065706, 2017
Structural change upon annealing of amorphous GeSbTe grown on Si (111)
V Bragaglia, B Jenichen, A Giussani, K Perumal, H Riechert, R Calarco
Journal of Applied Physics 116 (5), 054913, 2014
Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials
KV Mitrofanov, P Fons, K Makino, R Terashima, T Shimada, AV Kolobov, ...
Scientific reports 6 (1), 20633, 2016
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
AM Mio, SMS Privitera, V Bragaglia, F Arciprete, S Cecchi, G Litrico, ...
Scientific reports 7 (1), 2616, 2017
Laser induced structural transformation in chalcogenide based superlattices
E Zallo, R Wang, V Bragaglia, R Calarco
Applied Physics Letters 108 (22), 221904, 2016
Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys
JE Boschker, X Lü, V Bragaglia, R Wang, HT Grahn, R Calarco
Scientific Reports 8 (1), 5889, 2018
Mapping the band structure of GeSbTe phase change alloys around the Fermi level
J Kellner, G Bihlmayer, M Liebmann, S Otto, C Pauly, JE Boschker, ...
Communications Physics 1 (1), 5, 2018
State dependence and temporal evolution of resistance in projected phase change memory
B Kersting, V Ovuka, VP Jonnalagadda, M Sousa, V Bragaglia, SG Sarwat, ...
Scientific Reports 10 (1), 8248, 2020
Epitaxial Ge2Sb2Te5 probed by single cycle THz pulses of coherent synchrotron radiation
V Bragaglia, A Schnegg, R Calarco, K Holldack
Applied Physics Letters 109 (14), 141903, 2016
Analog resistive switching in BEOL, ferroelectric synaptic weights
L Bégon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, D Davila, ...
IEEE Journal of the Electron Devices Society 9, 1275-1281, 2021
Interband characterization and electronic transport control of nanoscaled superlattices
A Caretta, B Casarin, P Di Pietro, A Perucchi, S Lupi, V Bragaglia, ...
Physical Review B 94 (4), 045319, 2016
Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing
T Stecconi, R Guido, L Berchialla, A La Porta, J Weiss, Y Popoff, M Halter, ...
Advanced Electronic Materials 8 (10), 2200448, 2022
A back-end-of-line compatible, ferroelectric analog non-volatile memory
L Bégon-Lours, M Halter, DD Pineda, V Bragaglia, Y Popoff, A La Porta, ...
2021 IEEE International Memory Workshop (IMW), 1-4, 2021
Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering
V Bragaglia, F Arciprete, AM Mio, R Calarco
Journal of Applied Physics 123 (21), 215304, 2018
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