Resistive switching characteristics and mechanism of thermally grown WOx thin films KP Biju, X Liu, M Siddik, S Kim, J Shin, I Kim, A Ignatiev, H Hwang
Journal of Applied Physics 110 (6), 2011
89 2011 Low temperature solution-processed graphene oxide/Pr0. 7Ca0. 3MnO3 based resistive-memory device I Kim, M Siddik, J Shin, KP Biju, S Jung, H Hwang
Applied Physics Letters 99 (4), 2011
55 2011 Noise-Analysis-Based Model of Filamentary Switching ReRAM With D Lee, J Lee, M Jo, J Park, M Siddik, H Hwang
IEEE Electron Device Letters 32 (7), 964-966, 2011
49 2011 Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices KP Biju, XJ Liu, EM Bourim, I Kim, S Jung, M Siddik, J Lee, H Hwang
Journal of Physics D: Applied Physics 43 (49), 495104, 2010
49 2010 Memory cells, methods of fabrication, and semiconductor devices M Siddik, A Lyle, W Kula
US Patent 9,608,197, 2017
48 2017 Highly uniform and reliable resistance switching properties in bilayer WOx x SM Sadaf, X Liu, M Son, S Park, SH Choudhury, E Cha, M Siddik, J Shin, ...
physica status solidi (a) 209 (6), 1179-1183, 2012
43 2012 Quantized conductive filament formed by limited Cu source in sub-5nm era J Park, W Lee, M Choe, S Jung, M Son, S Kim, S Park, J Shin, D Lee, ...
2011 International Electron Devices Meeting, 3.7. 1-3.7. 4, 2011
43 2011 Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications S Park, S Jung, M Siddik, M Jo, J Park, S Kim, W Lee, J Shin, D Lee, ...
physica status solidi (RRL)–Rapid Research Letters 6 (11), 454-456, 2012
38 2012 Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory R Carboni, S Ambrogio, W Chen, M Siddik, J Harms, A Lyle, W Kula, ...
2016 IEEE International Electron Devices Meeting (IEDM), 21.6. 1-21.6. 4, 2016
30 2016 Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations S Kim, J Park, S Jung, W Lee, J Woo, C Cho, M Siddik, J Shin, S Park, ...
Applied Physics Letters 99 (19), 2011
29 2011 Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application KP Biju, X Liu, J Shin, I Kim, S Jung, M Siddik, J Lee, A Ignatiev, H Hwang
Current applied physics 11 (4), S102-S106, 2011
28 2011 Memory cells, methods of fabrication, and memory devices M Siddik, W Kula
US Patent 10,454,024, 2019
27 2019 Methods of forming semiconductor devices including tunnel barrier materials M Siddik, W Kula, S Ramarajan
US Patent 10,439,131, 2019
27 2019 Improved resistive switching properties in Pt/Pr0. 7Ca0. 3MnO3/Y2O3-stabilized ZrO2/W via-hole structures X Liu, KP Biju, S Park, I Kim, M Siddik, S Sadaf, H Hwang
Current Applied Physics 11 (2), e58-e61, 2011
27 2011 Random number generation by differential read of stochastic switching in spin-transfer torque memory R Carboni, W Chen, M Siddik, J Harms, A Lyle, W Kula, G Sandhu, ...
IEEE Electron Device Letters 39 (7), 951-954, 2018
25 2018 Modeling of breakdown-limited endurance in spin-transfer torque magnetic memory under pulsed cycling regime R Carboni, S Ambrogio, W Chen, M Siddik, J Harms, A Lyle, W Kula, ...
IEEE Transactions on Electron Devices 65 (6), 2470-2478, 2018
23 2018 Thermally assisted resistive switching in Pr0. 7Ca0. 3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications M Siddik, S Jung, J Park, W Lee, S Kim, J Lee, J Shin, S Park, D Lee, I Kim, ...
Applied Physics Letters 99 (6), 2011
23 2011 Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods A Liao, WI Kinney, YF Lee, M Siddik
US Patent 10,726,899, 2020
22 2020 Thermally-assisted Ti/Pr0.7 Ca0.3 MnO3 ReRAM with excellent switching speed and retention characteristics S Jung, M Siddik, W Lee, J Park, X Liu, J Woo, G Choi, J Lee, N Lee, ...
2011 International Electron Devices Meeting, 3.6. 1-3.6. 4, 2011
22 2011 Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices KP Biju, X Liu, S Kim, M Siddik, J Shin, J Lee, H Hwang
Current applied physics 11 (2), e62-e65, 2011
21 2011 