| A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications C Liu, X Yan, X Song, S Ding, DW Zhang, P Zhou Nature nanotechnology 13 (5), 404-410, 2018 | 347 | 2018 |
| Progress of large‐scale synthesis and electronic device application of two‐dimensional transition metal dichalcogenides X Song, Z Guo, Q Zhang, P Zhou, W Bao, DW Zhang Small 13 (35), 1700098, 2017 | 69 | 2017 |
| WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment C Li, X Yan, X Song, W Bao, S Ding, DW Zhang, P Zhou Nanotechnology 28 (41), 415201, 2017 | 67 | 2017 |
| Optical properties of thickness-controlled MoS2 thin films studied by spectroscopic ellipsometry D Li, X Song, J Xu, Z Wang, R Zhang, P Zhou, H Zhang, R Huang, ... Applied Surface Science 421, 884-890, 2017 | 58 | 2017 |
| Negative capacitance 2D MoS2transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free Z Yu, H Wang, W Li, S Xu, X Song, S Wang, P Wang, P Zhou, Y Shi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2017 | 57 | 2017 |
| A novel synthesis method for large-area MoS2 film with improved electrical contact X Song, W Zan, H Xu, S Ding, P Zhou, W Bao, DW Zhang 2D Materials 4 (2), 025051, 2017 | 23 | 2017 |
| Controlling the work function of molybdenum disulfide by in situ metal deposition P Zhou, X Song, X Yan, C Liu, L Chen, Q Sun, DW Zhang Nanotechnology 27 (34), 344002, 2016 | 20 | 2016 |
| Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts C Liu, X Yan, E Zhang, X Song, Q Sun, S Ding, W Bao, F Xiu, P Zhou, ... Small 13 (18), 1604319, 2017 | 17 | 2017 |
| Electrical level of defects in single-layer two-dimensional TiO2 XF Song, LF Hu, DH Li, L Chen, QQ Sun, P Zhou, DW Zhang Scientific Reports 5 (1), 15989, 2015 | 10 | 2015 |
| Study on electrical defects level in single layer two-dimensional Ta2O5 D Li, X Song, L Hu, Z Wang, R Zhang, L Chen, DW Zhang, P Zhou Chinese Physics B 25 (4), 047304, 2016 | 9 | 2016 |
