| A Graphene-Based Resistive Pressure Sensor with Record-High Sensitivity in a Wide Pressure Range H Tian, Y Shu, XF Wang, MA Mohammad, Z Bie, QY Xie, C Li, WT Mi, ... Scientific Reports 5, 8603, 2015 | 407 | 2015 |
| Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions H Tian, Z Tan, C Wu, X Wang, MA Mohammad, D Xie, Y Yang, J Wang, ... Scientific Reports 4, 5951, 2014 | 156 | 2014 |
| Fundamentals of Electron Beam Exposure and Development MA Mohammad, M Muhammad, SK Dew, M Stepanova Nanofabrication, 11-41, 2011 | 122 | 2011 |
| Surface acoustic wave devices for sensor applications L Bo, C Xiao, C Hualin, MA Mohammad, T Xiangguang, T Luqi, Y Yi, ... Journal of Semiconductors 37 (2), 021001, 2016 | 116 | 2016 |
| A spectrally tunable all-graphene-based flexible field-effect light-emitting device X Wang, H Tian, MA Mohammad, C Li, C Wu, Y Yang, TL Ren Nature communications 6, 7767, 2015 | 116 | 2015 |
| Cost-Effective, Transfer-Free, Flexible Resistive Random Access Memory Using Laser-Scribed Reduced-Graphene-Oxide Patterning Technology H Tian, HY Chen, TL Ren, C Li, QT Xue, MA Mohammad, C Wu, Y Yang, ... Nano Letters 14 (6), 3214-3219, 2014 | 101 | 2014 |
| Graphene Earphones: Entertainment for Both Humans and Animals H Tian, C Li, MA Mohammad, YL Cui, WT Mi, Y Yang, D Xie, TL Ren ACS Nano 8 (6), 5883–5890, 2014 | 98 | 2014 |
| A novel artificial synapse with dual modes using bilayer graphene as the bottom electrode H Tian, W Mi, H Zhao, MA Mohammad, Y Yang, PW Chiu, TL Ren Nanoscale 9 (27), 9275-9283, 2017 | 53 | 2017 |
| Observation of a giant two-dimensional band-piezoelectric effect on biaxial-strained graphene X Wang, H Tian, W Xie, Y Shu, WT Mi, MA Mohammad, QY Xie, Y Yang, ... NPG Asia Materials 7 (1), e154, 2015 | 52 | 2015 |
| Comparison between ZEP and PMMA resists for nanoscale electron beam lithography experimentally and by numerical modeling K Koshelev, MA Mohammad, T Fito, KL Westra, SK Dew, M Stepanova Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2011 | 51 | 2011 |
| In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device H Tian, H Zhao, XF Wang, QY Xie, HY Chen, MA Mohammad, C Li, WT Mi, ... Advanced Materials 27 (47), 7767-7774, 2015 | 43 | 2015 |
| Study of development processes for ZEP-520 as a high-resolution positive and negative tone electron beam lithography resist MA Mohammad, K Koshelev, T Fito, DAZ Zheng, M Stepanova, S Dew Japanese Journal of Applied Physics 51 (6S), 06FC05, 2012 | 41 | 2012 |
| A flexible, transparent and ultrathin single-layer graphene earphone He Tian, Yi Yang, Cheng Li, Wen-Tian Mi, Mohammad Ali Mohammad, and Tian ... RSC Advances 5 (22), 17366-17371, 2015 | 31 | 2015 |
| Systematic study of the interdependence of exposure and development conditions and kinetic modelling for optimizing low-energy electron beam nanolithography MA Mohammad, T Fito, J Chen, S Buswell, M Aktary, M Stepanova, ... Microelectronic Engineering 87 (5-8), 1104-1107, 2010 | 31 | 2010 |
| Tunable graphene oxide reduction and graphene patterning at room temperature on arbitrary substrates NQ Deng, H Tian, ZY Ju, HM Zhao, C Li, MA Mohammad, LQ Tao, Y Pang, ... Carbon 109, 173-181, 2016 | 28 | 2016 |
| A hardware Markov chain algorithm realized in a single device for machine learning H Tian, XF Wang, MA Mohammad, GY Gou, F Wu, Y Yang, TL Ren Nature communications 9 (1), 4305, 2018 | 27 | 2018 |
| Interdependence of optimum exposure dose regimes and the kinetics of resist dissolution for electron beam nanolithography of polymethylmethacrylate MA Mohammad, T Fito, J Chen, M Aktary, M Stepanova, SK Dew Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2010 | 24 | 2010 |
| Fabrication of sub-10 nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography MA Mohammad, SK Dew, S Evoy, M Stepanova Microelectronic Engineering 88 (8), 2338–2341, 2010 | 23 | 2010 |
| High performance lithium niobate surface acoustic wave transducers in the 4–12 GHz super high frequency range X Chen, MA Mohammad, J Conway, B Liu, Y Yang, TL Ren Journal of Vacuum Science & Technology B, Nanotechnology and …, 2015 | 22 | 2015 |
| SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography MA Mohammad, SK Dew, M Stepanova Nanoscale Research Letters 8 (1), 139, 2013 | 22 | 2013 |
He Tian (田禾)Tsinghua UniversityVerified email at tsinghua.edu.cn
