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Shah M Jahinuzzaman
Shah M Jahinuzzaman
Sr. Staff Engineer, Intel Corporation
Verified email at intel.com
Title
Cited by
Cited by
Year
A soft error tolerant 10T SRAM bit-cell with differential read capability
SM Jahinuzzaman, DJ Rennie, M Sachdev
IEEE Transactions on Nuclear Science 56 (6), 3768-3773, 2009
2982009
Soft error susceptibilities of 22 nm tri-gate devices
N Seifert, B Gill, S Jahinuzzaman, J Basile, V Ambrose, Q Shi, R Allmon, ...
IEEE Transactions on Nuclear Science 59 (6), 2666-2673, 2012
2232012
Soft error rate improvements in 14-nm technology featuring second-generation 3D tri-gate transistors
N Seifert, S Jahinuzzaman, J Velamala, R Ascazubi, N Patel, B Gill, ...
IEEE Transactions on Nuclear Science 62 (6), 2570-2577, 2015
1282015
An analytical model for soft error critical charge of nanometric SRAMs
SM Jahinuzzaman, M Sharifkhani, M Sachdev
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 17 (9 …, 2009
1182009
Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress
SM Jahinuzzaman, A Sultana, K Sakariya, P Servati, A Nathan
Applied Physics Letters 87 (2), 2005
962005
TSPC-DICE: A single phase clock high performance SEU hardened flip-flop
SM Jahinuzzaman, R Islam
2010 53rd IEEE International Midwest Symposium on Circuits and Systems, 73-76, 2010
452010
A compact hybrid current/voltage sense amplifier with offset cancellation for high-speed SRAMs
M Sharifkhani, E Rahiminejad, SM Jahinuzzaman, M Sachdev
IEEE transactions on very large scale integration (VLSI) systems 19 (5), 883-894, 2010
382010
Susceptibility of planar and 3D tri-gate technologies to muon-induced single event upsets
N Seifert, S Jahinuzzaman, J Velamala, N Patel
2015 IEEE International Reliability Physics Symposium, 2C. 1.1-2C. 1.6, 2015
312015
Design and analysis of a 5.3-pJ 64-kb gated ground SRAM with multiword ECC
SM Jahinuzzaman, JS Shah, DJ Rennie, M Sachdev
IEEE Journal of Solid-State Circuits 44 (9), 2543-2553, 2009
312009
Investigation of process impact on soft error susceptibility of nanometric SRAMs using a compact critical charge model
SM Jahinuzzaman, M Sharifkhani, M Sachdev
9th International Symposium on Quality Electronic Design (isqed 2008), 207-212, 2008
262008
Soft error robust flip-flops
M Sachdev, SM Jahinuzzaman
US Patent 7,714,628, 2010
132010
Soft error robust impulse and TSPC flip-flops in 90nm CMOS
SM Jahinuzzaman, DJ Rennie, M Sachdev
2009 2nd Microsystems and Nanoelectronics Research Conference, 45-48, 2009
132009
Correlating low energy neutron SER with broad beam neutron and 200 MeV proton SER for 22nm CMOS Tri-Gate devices
S Jahinuzzaman, B Gill, V Ambrose, N Seifert
2013 IEEE International Reliability Physics Symposium (IRPS), 3D. 1.1-3D. 1.6, 2013
122013
Modeling and mitigation of soft errors in nanoscale SRAMs
SM Jahinuzzaman
University of Waterloo, 2008
122008
A multiword based high speed ecc scheme for low-voltage embedded srams
S Jahinuzzaman, T Shakir, S Lubana, JS Shah, M Sachdev
ESSCIRC 2008-34th European Solid-State Circuits Conference, 226-229, 2008
122008
A read-decoupled gated-ground SRAM architecture for low-power embedded memories
W Hussain, SM Jahinuzzaman
Integration 45 (3), 229-236, 2012
102012
Dynamic data stability in low-power SRAM design
M Sharifkhani, SM Jahinuzzaman, M Sachdev
2007 IEEE Custom Integrated Circuits Conference, 237-240, 2007
92007
Dynamic data stability in SRAM cells and its implications on data stability tests
M Sharifkhani, SM Jahinuzzaman, M Sachdev
2006 IEEE International Workshop on Memory Technology, Design, and Testing …, 2006
82006
Soft error robust static random access memory cells
M Sachdev, SM Jahinuzzaman
US Patent 7,613,067, 2009
62009
A scalable offset-cancelled current/voltage sense amplifier
H Attarzadeh, M SharifKhani, SM Jahinuzzaman
Proceedings of 2010 IEEE International Symposium on Circuits and Systems …, 2010
52010
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Articles 1–20