Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN F Iucolano, F Roccaforte, A Alberti, C Bongiorno, S Di Franco, V Raineri
Journal of applied physics 100 (12), 2006
111 2006 High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect A Sciuto, F Roccaforte, S Di Franco, V Raineri, G Bonanno
Applied physics letters 89 (8), 2006
106 2006 Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ...
ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017
90 2017 Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs G Greco, F Iucolano, S Di Franco, C Bongiorno, A Patti, F Roccaforte
IEEE Transactions on Electron Devices 63 (7), 2735 - 2741, 2016
66 2016 Microscopic mechanisms of graphene electrolytic delamination from metal substrates G Fisichella, S Di Franco, F Roccaforte, S Ravesi, F Giannazzo
Applied Physics Letters 104 (23), 2014
63 2014 Molecular doping applied to Si nanowires array based solar cells RA Puglisi, C Garozzo, C Bongiorno, S Di Franco, M Italia, G Mannino, ...
Solar Energy Materials and Solar Cells 132, 118-122, 2015
52 2015 Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ...
Beilstein journal of nanotechnology 8 (1), 254-263, 2017
50 2017 Interface Electrical Properties of Al2 O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ...
ACS applied materials & interfaces 9 (8), 7761-7771, 2017
45 2017 Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates G Fisichella, S Di Franco, P Fiorenza, RL Nigro, F Roccaforte, C Tudisco, ...
Beilstein journal of nanotechnology 4 (1), 234-242, 2013
44 2013 Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer A Sciuto, F Roccaforte, S Di Franco, V Raineri, S Billotta, G Bonanno
Applied physics letters 90 (22), 2007
37 2007 Silicon carbide pinch rectifiers using a dual-metal Ti-Ni/sub 2/Si Schottky barrier F Roccaforte, F La Via, A La Magna, S Di Franco, V Raineri
IEEE transactions on Electron Devices 50 (8), 1741-1747, 2003
33 2003 Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers RL Nigro, E Schilirò, G Mannino, S Di Franco, F Roccaforte
Journal of Crystal Growth 539, 125624, 2020
32 2020 Effect of high temperature annealing (T> 1650 C) on the morphological and electrical properties of p-type implanted 4H-SiC layers M Spera, D Corso, S Di Franco, G Greco, A Severino, P Fiorenza, ...
Materials Science in Semiconductor Processing 93, 274-279, 2019
28 2019 High growth rate process in a SiC horizontal CVD reactor using HCl F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, ...
Microelectronic engineering 83 (1), 48-50, 2006
28 2006 Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy F Giannazzo, G Greco, S Di Franco, P Fiorenza, I Deretzis, A La Magna, ...
Advanced Electronic Materials 6 (2), 1901171, 2020
27 2020 Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ...
physica status solidi (RRL)–Rapid Research Letters 10 (11), 797-801, 2016
27 2016 Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films A Severino, M Camarda, S Scalese, P Fiorenza, S Di Franco, ...
Applied Physics Letters 95 (11), 2009
27 2009 Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC S Rascunà, P Badalà, C Tringali, C Bongiorno, E Smecca, A Alberti, ...
Materials Science in Semiconductor Processing 97, 62-66, 2019
26 2019 Spontaneous galvanic displacement of Pt nanostructures on nickel foam: Synthesis, characterization and use for hydrogen evolution reaction RG Milazzo, SMS Privitera, D D'Angelo, S Scalese, S Di Franco, F Maita, ...
International Journal of Hydrogen Energy 43 (16), 7903-7910, 2018
26 2018 Visible Blind 4H-SiC P A Sciuto, M Mazzillo, S Di Franco, F Roccaforte, G D'Arrigo
IEEE Photonics Journal 7 (3), 1-6, 2015
26 2015 