N-polar GaN epitaxy and high electron mobility transistors M. H. Wong, S. Keller, S. Dasgupta, D. J. Denninghoff, S. Kolluri, D. F ...
Semiconductor Science and Technology 28 (7), 074009, 2013
215 2013 Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond M Kim, JH Seo, U Singisetti, Z Ma
Journal of Materials Chemistry C 5 (33), 8338-8354, 2017
189 2017 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2 O3 MOSFETs K Zeng, A Vaidya, U Singisetti
IEEE Electron Device Letters 39 (9), 1385-1388, 2018
179 2018 Field-Plated Lateral Ga2 O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage S Sharma, K Zeng, S Saha, U Singisetti
IEEE Electron Device Letters 41 (6), 836-839, 2020
146 2020 Ab initio velocity-field curves in monoclinic β-Ga2 O3 K Ghosh, U Singisetti
Journal of Applied Physics 122 (3), 035702, 2017
137 2017 Ga2 O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology K Zeng, JS Wallace, C Heimburger, K Sasaki, A Kuramata, T Masui, ...
IEEE Electron Device Letters 38 (4), 513-516, 2017
127 2017 MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE RegrowthU Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
114 2009 Ab initio calculation of electron–phonon coupling in monoclinic β-Ga2 O3 crystalK Ghosh, U Singisetti
Applied Physics Letters 109 (7), 072102, 2016
111 2016 β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
APL Materials 10 (2), 029201, 2022
104 2022 Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation G He, K Ghosh, U Singisetti, H Ramamoorthy, R Somphonsane, G Bohra, ...
Nano letters 15 (8), 5052-5058, 2015
102 2015 Impact ionization in β-Ga2 O3 K Ghosh, U Singisetti
Journal of Applied Physics 124 (8), 085707, 2018
98 2018 Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement K Ghosh, U Singisetti
Journal of Materials Research 32 (22), 4142-4152, 2017
96 2017 Ultralow resistance in situ Ohmic contacts to InGaAs/InP U.Singisetti, M.A.Wistey, J.Zimmerman, B.Thibeault, A.Gossard, M.Rodwell
Applied Physics Letters 93, 183502, 2008
94 2008 Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β -Ga2 O3 ( Y Jia, K Zeng, JS Wallace, JA Gardella, U Singisetti
Applied Physics Letters 106 (10), 102107, 2015
93 2015 Device-level thermal management of gallium oxide field-effect transistors B Chatterjee, K Zeng, CD Nordquist, U Singisetti, S Choi
IEEE Transactions on Components, Packaging and Manufacturing Technology 9 …, 2019
92 2019 Interface State Density in Atomic Layer Deposited SiO2 /2 O3 ( K Zeng, Y Jia, U Singisetti
IEEE Electron Device Letters 37 (7), 906-909, 2016
92 2016 Ultralow resistance, nonalloyed Ohmic contacts to AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
72 2009 Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth U Singisetti, MH Wong, S Dasgupta, B Swenson, BJ Thibeault, JS Speck, ...
IEEE Electron Device Letters 32 (2), 137-139, 2010
65 2010 A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm2 on-resistance K Zeng, A Vaidya, U Singisetti
Applied Physics Express 12 (8), 081003, 2019
64 2019 Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors M Randle, A Lipatov, A Kumar, CP Kwan, J Nathawat, B Barut, S Yin, ...
ACS nano 13 (1), 803-811, 2018
54 2018 