AlGaN/AlN/GaN high-power microwave HEMT L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ...
IEEE Electron Device Letters 22 (10), 457-459, 2001
598 2001 AlGaN/GaN high electron mobility transistors with InGaN back-barriers T Palacios, A Chakraborty, S Heikman, S Keller, SP DenBaars, UK Mishra
IEEE Electron device letters 27 (1), 13-15, 2005
494 2005 Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition S Heikman, S Keller, SP DenBaars, UK Mishra
Applied Physics Letters 81 (3), 439-441, 2002
476 2002 High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates H Xing, Y Dora, A Chini, S Heikman, S Keller, UK Mishra
IEEE Electron Device Letters 25 (4), 161-163, 2004
473 2004 AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, L Chen, T Mates, L Shen, S Heikman, B Moran, S Keller, ...
Journal of Applied Physics 90 (10), 5196-5201, 2001
426 2001 High breakdown GaN HEMT with overlapping gate structure NQ Zhang, S Keller, G Parish, S Heikman, SP DenBaars, UK Mishra
IEEE Electron Device Letters 21 (9), 421-423, 2000
404 2000 A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz Y Wu, M Jacob-Mitos, ML Moore, S Heikman
IEEE Electron Device Letters 29 (8), 824-826, 2008
329 2008 Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures S Heikman, S Keller, Y Wu, JS Speck, SP DenBaars, UK Mishra
Journal of applied physics 93 (12), 10114-10118, 2003
283 2003 Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ...
IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005
251 2005 Normally-off semiconductor devices S Heikman, Y Wu
US Patent 7,985,986, 2011
247 2011 Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors C Poblenz, P Waltereit, S Rajan, S Heikman, UK Mishra, JS Speck
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
226 2004 Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures S Keller, G Parish, PT Fini, S Heikman, CH Chen, N Zhang, SP DenBaars, ...
Journal of applied physics 86 (10), 5850-5857, 1999
220 1999 Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys D Jena, S Heikman, D Green, D Buttari, R Coffie, H Xing, S Keller, ...
Applied physics letters 81 (23), 4395-4397, 2002
210 2002 12W/mm power density AlGaN/GaN HEMTs on sapphire substrate A Chini, D Buttari, R Coffie, S Heikman, S Keller, UK Mishra
Electronics Letters 40 (1), 1, 2004
194 2004 Gallium nitride based transistors H Xing, S Keller, YF Wu, L McCarthy, IP Smorchkova, D Buttari, R Coffie, ...
Journal of Physics: Condensed Matter 13 (32), 7139, 2001
171 2001 Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers IP Smorchkova, S Keller, S Heikman, CR Elsass, B Heying, P Fini, ...
Applied Physics Letters 77 (24), 3998-4000, 2000
142 2000 High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation L Shen, R Coffie, D Buttari, S Heikman, A Chakraborty, A Chini, S Keller, ...
IEEE Electron Device Letters 25 (1), 7-9, 2004
140 2004 Origin of etch delay time in dry etching of AlGaN/GaN structures D Buttari, A Chini, T Palacios, R Coffie, L Shen, H Xing, S Heikman, ...
Applied physics letters 83 (23), 4779-4781, 2003
129 2003 Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE S Rajan, P Waltereit, C Poblenz, SJ Heikman, DS Green, JS Speck, ...
IEEE Electron Device Letters 25 (5), 247-249, 2004
128 2004 Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs A Chini, D Buttari, R Coffie, L Shen, S Heikman, A Chakraborty, S Keller, ...
IEEE Electron Device Letters 25 (5), 229-231, 2004
126 2004