| GaN nanodiode arrays with improved design for zero-bias sub-THz detection H Sánchez-Martín, S Sánchez-Martín, I Íñiguez-de-la-Torre, S Pérez, ... Semiconductor Science and Technology 33 (9), 095016, 2018 | 20 | 2018 |
| Voltage controlled sub-THz detection with gated planar asymmetric nanochannels H Sánchez-Martín, J Mateos, JA Novoa, JA Delgado-Notario, YM Meziani, ... Applied Physics Letters 113 (4), 2018 | 14 | 2018 |
| Temperature and gate-length dependence of subthreshold RF detection in GaN HEMTs G Paz-Martínez, I Íñiguez-De-La-Torre, H Sánchez-Martín, ... Sensors 22 (4), 1515, 2022 | 10 | 2022 |
| Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes E Pérez-Martín, T González, D Vaquero, H Sánchez-Martín, C Gaquière, ... Nanotechnology 31 (40), 405204, 2020 | 10 | 2020 |
| Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs H Sanchez-Martin, Ó García-Pérez, S Pérez, P Altuntas, V Hoel, ... Semiconductor Science and Technology 32 (3), 035011, 2017 | 9 | 2017 |
| Analysis of GaN-based HEMTs operating as RF detectors over a wide temperature range G Paz-Martínez, I Íñiguez-de-la-Torre, H Sánchez-Martín, T González, ... IEEE Transactions on Microwave Theory and Techniques, 2023 | 7 | 2023 |
| Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature E Pérez-Martín, H Sánchez-Martín, T González, J Mateos, ... Nanotechnology 34 (32), 325201, 2023 | 5 | 2023 |
| Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors G Paz-Martínez, I Íñiguez-De-La-Torre, H Sánchez-Martín, ... Journal of Applied Physics 132 (13), 2022 | 5 | 2022 |
| Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs H Sánchez-Martín, I Íñiguez-de-la-Torre, S García-Sánchez, J Mateos, ... Solid-State Electronics 193, 108289, 2022 | 4 | 2022 |
| Geometry and bias dependence of trapping effects in planar GaN nanodiodes H Sánchez-Martín, O García-Pérez, I Íñiguez-de-la-Torre, S Pérez, ... 2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017 | 4 | 2017 |
| Low temperature memory effects in AlGaN/GaN nanochannels H Sánchez-Martín, E Pérez-Martín, G Paz-Martínez, J Mateos, T González, ... Applied Physics Letters 123 (10), 2023 | 3 | 2023 |
| Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+ y thin films R Paul, V Conti, M Zamani, S Escobar-Steinvall, H Sánchez-Martín, ... Solar Energy Materials and Solar Cells 252, 112194, 2023 | 3 | 2023 |
| Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements E Pérez-Martín, D Vaquero, H Sánchez-Martín, C Gaquière, VJ Raposo, ... Microelectronics Reliability 114, 113806, 2020 | 3 | 2020 |
| Comprehensive characterization of Gunn oscillations in In0. 53Ga0. 47As planar diodes Y Lechaux, I Ìñiguez-de-la-Torre, JA Novoa-López, Ó García-Pérez, ... Semiconductor Science and Technology 35 (11), 115009, 2020 | 3 | 2020 |
| Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity H Sánchez-Martín, S Sánchez-Martín, O García-Pérez, S Pérez, J Mateos, ... 2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017 | 3 | 2017 |
| Temperature behavior of Gunn oscillations in planar InGaAs diodes JA Novoa-López, G Paz-Martinez, H Sánchez-Martín, Y Lechaux, ... IEEE Electron Device Letters 42 (8), 1136-1139, 2021 | 2 | 2021 |
| High-frequency response and thermal effects in GaN diodes and transistors: modeling and experimental characterization H Sánchez Martín | 2 | 2020 |
| Shot-noise suppression effects in InGaAs planar diodes at room temperature Ó García-Pérez, H Sánchez-Martín, J Mateos, S Pérez, A Westlund, ... Journal of Physics: Conference Series 647 (1), 012061, 2015 | 2 | 2015 |
| Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels H Sánchez-Martín, I Íñiguez-de-la-Torre, J Mateos, S Pérez, T González, ... 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2023 | 1 | 2023 |
| Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes I Íñiguez-de-la-Torre, E Pérez-Martín, P Artillan, E Rochefeuille, ... Applied Physics Letters 123 (12), 2023 | 1 | 2023 |
