Xuefeng Wang
Xuefeng Wang
Verified email at mails.tsinghua.edu.cn
Title
Cited by
Cited by
Year
A graphene-based resistive pressure sensor with record-high sensitivity in a wide pressure range
H Tian, Y Shu, XF Wang, MA Mohammad, Z Bie, QY Xie, C Li, WT Mi, ...
Scientific reports 5 (1), 1-6, 2015
4212015
Epidermis microstructure inspired graphene pressure sensor with random distributed spinosum for high sensitivity and large linearity
Y Pang, K Zhang, Z Yang, S Jiang, Z Ju, Y Li, X Wang, D Wang, M Jian, ...
ACS nano 12 (3), 2346-2354, 2018
3362018
Flexible, highly sensitive, and wearable pressure and strain sensors with graphene porous network structure
Y Pang, H Tian, L Tao, Y Li, X Wang, N Deng, Y Yang, TL Ren
ACS applied materials & interfaces 8 (40), 26458-26462, 2016
3012016
Extremely low operating current resistive memory based on exfoliated 2D perovskite single crystals for neuromorphic computing
H Tian, L Zhao, X Wang, YW Yeh, N Yao, BP Rand, TL Ren
Acs Nano 11 (12), 12247-12256, 2017
1882017
Graphene dynamic synapse with modulatable plasticity
H Tian, W Mi, XF Wang, H Zhao, QY Xie, C Li, YX Li, Y Yang, TL Ren
Nano letters 15 (12), 8013-8019, 2015
1872015
Multilayer graphene epidermal electronic skin
Y Qiao, Y Wang, H Tian, M Li, J Jian, Y Wei, Y Tian, DY Wang, Y Pang, ...
ACS nano 12 (9), 8839-8846, 2018
1622018
Wearable humidity sensor based on porous graphene network for respiration monitoring
Y Pang, J Jian, T Tu, Z Yang, J Ling, Y Li, X Wang, Y Qiao, H Tian, Y Yang, ...
Biosensors and Bioelectronics 116, 123-129, 2018
1552018
Flexible CNT-array double helices strain sensor with high stretchability for motion capture
C Li, YL Cui, GL Tian, Y Shu, XF Wang, H Tian, Y Yang, F Wei, TL Ren
Scientific reports 5 (1), 1-8, 2015
632015
Simultaneous synthesis and integration of two-dimensional electronic components
Q Zhang, XF Wang, SH Shen, Q Lu, X Liu, H Li, J Zheng, CP Yu, X Zhong, ...
Nature Electronics 2 (4), 164-170, 2019
462019
In situ tuning of switching window in a gate‐controlled bilayer graphene‐electrode resistive memory device
H Tian, H Zhao, XF Wang, QY Xie, HY Chen, MA Mohammad, C Li, WT Mi, ...
Advanced Materials 27 (47), 7767-7774, 2015
442015
Interface Engineering with MoS2–Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory
XF Wang, H Tian, HM Zhao, TY Zhang, WQ Mao, YC Qiao, Y Pang, YX Li, ...
Small 14 (2), 1702525, 2018
412018
A hardware Markov chain algorithm realized in a single device for machine learning
H Tian, XF Wang, MA Mohammad, GY Gou, F Wu, Y Yang, TL Ren
Nature communications 9 (1), 1-11, 2018
312018
Tunable graphene oxide reduction and graphene patterning at room temperature on arbitrary substrates
NQ Deng, H Tian, ZY Ju, HM Zhao, C Li, MA Mohammad, LQ Tao, Y Pang, ...
Carbon 109, 173-181, 2016
312016
Fabrication techniques and applications of flexible graphene-based electronic devices
T Luqi, W Danyang, J Song, L Ying, X Qianyi, T He, D Ningqin, W Xuefeng, ...
Journal of Semiconductors 37 (4), 041001, 2016
292016
Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer
PZ Shao, HM Zhao, HW Cao, XF Wang, Y Pang, YX Li, NQ Deng, J Zhang, ...
Applied Physics Letters 108 (20), 203105, 2016
282016
Graphene resistive random memory—the promising memory device in next generation
XF Wang, HM Zhao, Y Yang, TL Ren
Chinese Physics B 26 (3), 038501, 2017
182017
Two-Mode MoS2 Filament Transistor with Extremely Low Subthreshold Swing and Record High On/Off Ratio
XF Wang, H Tian, Y Liu, S Shen, Z Yan, N Deng, Y Yang, TL Ren
ACS nano 13 (2), 2205-2212, 2019
172019
Graphene devices based on laser scribing technology
YC Qiao, YH Wei, Y Pang, YX Li, DY Wang, YT Li, NQ Deng, XF Wang, ...
Japanese Journal of Applied Physics 57 (4S), 04FA01, 2018
142018
High performance photodetector based on Pd-single layer MoS2 Schottky junction
XF Wang, HM Zhao, SH Shen, Y Pang, PZ Shao, YT Li, NQ Deng, YX Li, ...
Applied Physics Letters 109 (20), 201904, 2016
122016
A Graphene‐Based Filament Transistor with Sub‐10 mVdec−1 Subthreshold Swing
H Tian, X Wang, H Zhao, W Mi, Y Yang, PW Chiu, TL Ren
Advanced Electronic Materials 4 (4), 1700608, 2018
112018
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