متابعة
phil mawby
phil mawby
professor of power electronics, School of Engineering, university of warwick, UK
بريد إلكتروني تم التحقق منه على warwick.ac.uk
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
An industry-based survey of reliability in power electronic converters
S Yang, A Bryant, P Mawby, D Xiang, L Ran, P Tavner
IEEE transactions on Industry Applications 47 (3), 1441-1451, 2011
21252011
Condition monitoring for device reliability in power electronic converters: A review
S Yang, D Xiang, A Bryant, P Mawby, L Ran, P Tavner
IEEE transactions on power electronics 25 (11), 2734-2752, 2010
12972010
A lifetime estimation technique for voltage source inverters
H Huang, PA Mawby
IEEE Transactions on Power Electronics 28 (8), 4113-4119, 2012
4082012
Investigation into IGBT dV/dt during turn-off and its temperature dependence
A Bryant, S Yang, P Mawby, D Xiang, L Ran, P Tavner, PR Palmer
IEEE Transactions on Power Electronics 26 (10), 3019-3031, 2011
2422011
Monitoring solder fatigue in a power module using case-above-ambient temperature rise
D Xiang, L Ran, P Tavner, A Bryant, S Yang, P Mawby
IEEE Transactions on Industry Applications 47 (6), 2578-2591, 2011
2172011
Theory of a novel voltage-sustaining layer for power devices
XB Chen, PA Mawby, K Board, CAT Salama
Microelectronics journal 29 (12), 1005-1011, 1998
1981998
Exploration of power device reliability using compact device models and fast electrothermal simulation
AT Bryant, PA Mawby, PR Palmer, E Santi, JL Hudgins
IEEE transactions on industry applications 44 (3), 894-903, 2008
1832008
Condition monitoring power module solder fatigue using inverter harmonic identification
D Xiang, L Ran, P Tavner, S Yang, A Bryant, P Mawby
IEEE Transactions on Power Electronics 27 (1), 235-247, 2011
1742011
Failure and reliability analysis of a SiC power module based on stress comparison to a Si device
B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai, B Gao, O Alatise, H Lu, ...
IEEE Transactions on device and materials reliability 17 (4), 727-737, 2017
1612017
Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules
S Jahdi, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 63 (2), 849-863, 2015
1522015
Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
A Pérez-Tomás, P Brosselard, P Godignon, J Millán, N Mestres, ...
Journal of applied physics 100 (11), 2006
1452006
LowStress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling
W Lai, M Chen, L Ran, O Alatise, S Xu, P Mawby
IEEE Transactions on Power Electronics 31 (9), 6575-6585, 2015
1402015
An investigation of temperature-sensitive electrical parameters for SiC power MOSFETs
JO Gonzalez, O Alatise, J Hu, L Ran, PA Mawby
IEEE Transactions on Power Electronics 32 (10), 7954-7966, 2016
1172016
An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation
S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ...
IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014
1102014
Experimental investigation on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module
W Lai, M Chen, L Ran, S Xu, N Jiang, X Wang, O Alatise, P Mawby
IEEE Transactions on Power Electronics 32 (2), 1431-1441, 2016
1092016
A fast loss and temperature simulation method for power converters, part II: 3-D thermal model of power module
I Swan, A Bryant, PA Mawby, T Ueta, T Nishijima, K Hamada
IEEE Transactions on Power Electronics 27 (1), 258-268, 2011
972011
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 2013
932013
Robustness and balancing of parallel-connected power devices: SiC versus CoolMOS
J Hu, O Alatise, JAO Gonzalez, R Bonyadi, P Alexakis, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 63 (4), 2092-2102, 2015
872015
Capacitor selection for modular multilevel converter
Y Tang, L Ran, O Alatise, P Mawby
IEEE Transactions on Industry Applications 52 (4), 3279-3293, 2016
852016
The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching
J Hu, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, PA Mawby
IEEE Transactions on Power Electronics 31 (6), 4526-4535, 2015
852015
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مقالات 1–20