| Amorphous-to-crystal transition of nitrogen- and oxygen-doped films studied by in situ resistance measurements S Privitera, E Rimini, R Zonca Applied physics letters 85 (15), 3044-3046, 2004 | 233 | 2004 |
| Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ... Scientific Reports 6, 23843, 2016 | 110 | 2016 |
| Microscopy study of the conductive filament in HfO2 resistive switching memory devices S Privitera, G Bersuker, B Butcher, A Kalantarian, S Lombardo, ... Microelectronic Engineering 109, 75-78, 2013 | 105 | 2013 |
| Crystal nucleation and growth processes in S Privitera, C Bongiorno, E Rimini, R Zonca Applied physics letters 84 (22), 4448-4450, 2004 | 99 | 2004 |
| Crystallization and phase separation in thin films S Privitera, E Rimini, C Bongiorno, R Zonca, A Pirovano, R Bez Journal of applied physics 94 (7), 4409-4413, 2003 | 92 | 2003 |
| Sicilia—silicon carbide detectors for intense luminosity investigations and applications S Tudisco, F La Via, C Agodi, C Altana, G Borghi, M Boscardin, ... Sensors 18 (7), 2289, 2018 | 60 | 2018 |
| Conductive filament structure in HfO2 resistive switching memory devices S Privitera, G Bersuker, S Lombardo, C Bongiorno, DC Gilmer Solid-State Electronics 111, 161-165, 2015 | 57 | 2015 |
| Arrays of Geiger mode avalanche photodiodes E Sciacca, S Lombardo, M Mazzillo, G Condorelli, D Sanfilippo, ... IEEE Photonics Technology Letters 18 (15), 1633-1635, 2006 | 46 | 2006 |
| Chemical and structural arrangement of the trigonal phase in GeSbTe thin films AM Mio, SMS Privitera, V Bragaglia, F Arciprete, C Bongiorno, R Calarco, ... Nanotechnology 28 (6), 065706, 2017 | 44 | 2017 |
| Silicon carbide detectors study for NUMEN project A Muoio, C Agodi, DL Bonanno, DG Bongiovanni, S Calabrese, ... EPJ Web of Conferences 117, 10006, 2016 | 39 | 2016 |
| Single photon avalanche photodiodes arrays M Mazzillo, G Condorelli, A Campisi, E Sciacca, M Belluso, S Billotta, ... Sensors and Actuators A: Physical 138 (2), 306-312, 2007 | 37 | 2007 |
| Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films S Privitera, E Rimini, C Bongiorno, A Pirovano, R Bez Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007 | 36 | 2007 |
| Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting T Han, Y Shi, X Song, A Mio, L Valenti, F Hui, S Privitera, S Lombardo, ... Journal of Materials Chemistry A 4 (21), 8053-8060, 2016 | 33 | 2016 |
| Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2 S Lombardo, S Coffa, C Bongiorno, C Spinella, E Castagna, A Sciuto, ... Materials Science and Engineering: B 69, 295-298, 2000 | 33 | 2000 |
| Structural and electronic transitions in G e 2 S b 2 T e 5 induced by ion irradiation damage SMS Privitera, AM Mio, E Smecca, A Alberti, W Zhang, R Mazzarello, ... Physical Review B 94 (9), 094103, 2016 | 32 | 2016 |
| Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys E Zallo, S Cecchi, JE Boschker, AM Mio, F Arciprete, S Privitera, ... Scientific Reports 7 (1), 1466, 2017 | 28 | 2017 |
| Electrical and structural characterization of metal–oxide–semiconductor capacitors with silicon rich oxide I Crupi, S Lombardo, C Spinella, C Bongiorno, Y Liao, C Gerardi, B Fazio, ... Journal of Applied Physics 89 (10), 5552-5558, 2001 | 27 | 2001 |
| Phase change mechanisms in S Privitera, S Lombardo, C Bongiorno, E Rimini, A Pirovano Journal of Applied Physics 102 (1), 013516, 2007 | 24 | 2007 |
| Effect of the linewidth reduction on the characteristic time spread in C49–C54 phase transition S Privitera, F La Via, MG Grimaldi, E Rimini Applied physics letters 73 (26), 3863-3865, 1998 | 24 | 1998 |
| Interface state density evaluation of high quality hetero-epitaxial 3C–SiC (0 0 1) for high-power MOSFET applications R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, ... Materials Science and Engineering: B 198, 14-19, 2015 | 23 | 2015 |
