| Radiation damage in wide and ultra-wide bandgap semiconductors SJ Pearton, A Aitkaliyeva, M Xian, F Ren, A Khachatrian, A Ildefonso, ... ECS Journal of Solid State Science and Technology 10 (5), 055008, 2021 | 77 | 2021 |
| Design and On-Wafer Characterization of G-Band SiGe HBT Low-Noise Amplifiers CT Coen, AÇ Ulusoy, P Song, A Ildefonso, M Kaynak, B Tillack, ... IEEE Transactions on Microwave Theory and Techniques, 0 | 37* | |
| Experimental validation of an equivalent LET approach for correlating heavy-ion and laser-induced charge deposition JM Hales, A Khachatrian, S Buchner, NJH Roche, J Warner, ... IEEE Transactions on Nuclear Science 65 (8), 1724-1733, 2018 | 36 | 2018 |
| Using TCAD modeling to compare heavy-ion and laser-induced single event transients in SiGe HBTs ZE Fleetwood, NE Lourenco, A Ildefonso, JH Warner, MT Wachter, ... IEEE Transactions on Nuclear Science 64 (1), 398-405, 2016 | 31 | 2016 |
| Optimizing optical parameters to facilitate correlation of laser-and heavy-ion-induced single-event transients in SiGe HBTs A Ildefonso, ZE Fleetwood, GN Tzintzarov, JM Hales, D Nergui, ... IEEE Transactions on Nuclear Science 66 (1), 359-367, 2018 | 27 | 2018 |
| The impact of technology scaling on the single-event transient response of SiGe HBTs NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ... IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016 | 27 | 2016 |
| New approach for pulsed-laser testing that mimics heavy-ion charge deposition profiles JM Hales, A Khachatrian, S Buchner, J Warner, A Ildefonso, ... IEEE Transactions on Nuclear Science 67 (1), 81-90, 2019 | 26 | 2019 |
| An investigation of single-event effect modeling techniques for a SiGe RF low-noise amplifier NE Lourenco, S Zeinolabedinzadeh, A Ildefonso, ZE Fleetwood, CT Coen, ... IEEE transactions on Nuclear Science 63 (1), 273-280, 2016 | 21 | 2016 |
| opportunities in single event effects in radiation-exposed SiC and GaN power electronics SJ Pearton, A Haque, A Khachatrian, A Ildefonso, L Chernyak, F Ren ECS Journal of Solid State Science and Technology 10 (7), 075004, 2021 | 19 | 2021 |
| Comparison of single-event transients in SiGe HBTs on bulk and thick-film SOI A Ildefonso, GN Tzintzarov, D Nergui, AP Omprakash, PS Goley, ... IEEE Transactions on Nuclear Science 67 (1), 71-80, 2019 | 18 | 2019 |
| Optical single-event transients induced in integrated silicon-photonic waveguides by two-photon absorption GN Tzintzarov, A Ildefonso, JW Teng, M Frounchi, A Djikeng, P Iyengar, ... IEEE Transactions on Nuclear Science 68 (5), 785-792, 2021 | 17 | 2021 |
| Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform PS Goley, GN Tzintzarov, S Zeinolabedinzadeh, A Ildefonso, K Motoki, ... IEEE Transactions on Nuclear Science 66 (1), 125-133, 2018 | 16 | 2018 |
| On the application of inverse-mode SiGe HBTs in RF receivers for the mitigation of single-event transients I Song, MK Cho, MA Oakley, A Ildefonso, I Ju, SP Buchner, D McMorrow, ... IEEE transactions on Nuclear Science 64 (5), 1142-1150, 2017 | 14 | 2017 |
| Single-event transients in SiGe HBTs induced by pulsed X-ray microbeam D Nergui, A Ildefonso, GN Tzintzarov, NE Lourenco, AP Omprakash, ... IEEE Transactions on Nuclear Science 67 (1), 91-98, 2019 | 12 | 2019 |
| Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics JM Hales, A Khachatrian, J Warner, S Buchner, A Ildefonso, ... Optics Express 27 (26), 37652-37666, 2019 | 11 | 2019 |
| SiGe HBT profiles with enhanced inverse-mode operation and their impact on single-event transients ZE Fleetwood, A Ildefonso, GN Tzintzarov, B Wier, U Raghunathan, ... IEEE transactions on Nuclear Science 65 (1), 399-406, 2017 | 11 | 2017 |
| Single-event transient response of comparator pre-amplifiers in a complementary SiGe technology A Ildefonso, NE Lourenco, ZE Fleetwood, MT Wachter, GN Tzintzarov, ... IEEE transactions on Nuclear Science 64 (1), 89-96, 2016 | 11 | 2016 |
| Utilizing SiGe HBT power detectors for sensing single-event transients in RF circuits A Ildefonso, CT Coen, ZE Fleetwood, GN Tzintzarov, MT Wachter, ... IEEE Transactions on Nuclear Science 65 (1), 239-248, 2017 | 10 | 2017 |
| Modeling single-event transient propagation in a SiGe BiCMOS direct-conversion receiver A Ildefonso, I Song, GN Tzintzarov, ZE Fleetwood, NE Lourenco, ... 2016 16th European Conference on Radiation and Its Effects on Components and …, 2016 | 10 | 2016 |
| Pulsed-laser testing to quantitatively evaluate latchup sensitivity in mixed-signal ASICs JM Hales, A Khachatrian, A Ildefonso, S Buchner, D Adams, D Wheeler, ... IEEE Transactions on Nuclear Science 69 (3), 429-435, 2021 | 9 | 2021 |
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia TechVerified email at ece.gatech.edu
