| Predictive physics-based TCAD modeling of the mixed-mode degradation mechanism in SiGe HBTs KA Moen, PS Chakraborty, US Raghunathan, JD Cressler, H Yasuda IEEE transactions on electron devices 59 (11), 2895-2901, 2012 | 44 | 2012 |
| Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs I Song, S Jung, NE Lourenco, US Raghunathan, ZE Fleetwood, ... IEEE transactions on Nuclear Science 61 (6), 3218-3225, 2014 | 39 | 2014 |
| Large-signal reliability analysis of SiGe HBT cascode driver amplifiers MA Oakley, US Raghunathan, BR Wier, PS Chakraborty, JD Cressler IEEE Transactions on Electron Devices 62 (5), 1383-1389, 2015 | 38 | 2015 |
| Collector transport in SiGe HBTs operating at cryogenic temperatures H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ... IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018 | 26 | 2018 |
| A comparison of field and current-driven hot-carrier reliability in NPN SiGe HBTs BR Wier, US Raghunathan, PS Chakraborty, H Yasuda, P Menz, ... IEEE Transactions on Electron Devices 62 (7), 2244-2250, 2015 | 24 | 2015 |
| Bias-and temperature-dependent accumulated stress modeling of mixed-mode damage in SiGe HBTs US Raghunathan, PS Chakraborty, TG Bantu, BR Wier, H Yasuda, ... IEEE Transactions on electron Devices 62 (7), 2084-2091, 2015 | 20 | 2015 |
| Hot-carrier-damage-induced current gain enhancement (CGE) effects in SiGe HBTs US Raghunathan, RP Martinez, BR Wier, AP Omprakash, H Ying, ... IEEE Transactions on Electron Devices 65 (6), 2430-2438, 2018 | 13 | 2018 |
| Single-event effects in a W-band (75-110 GHz) radar down-conversion mixer implemented in 90 nm, 300 GHz SiGe HBT technology S Zeinolabedinzadeh, I Song, US Raghunathan, NE Lourenco, ... IEEE Transactions on Nuclear Science 62 (6), 2657-2665, 2015 | 12 | 2015 |
| SiGe HBT profiles with enhanced inverse-mode operation and their impact on single-event transients ZE Fleetwood, A Ildefonso, GN Tzintzarov, B Wier, U Raghunathan, ... IEEE transactions on Nuclear Science 65 (1), 399-406, 2017 | 11 | 2017 |
| Physical differences in hot carrier degradation of oxide interfaces in complementary (np-n+ pnp) SiGe HBTs US Raghunathan, H Ying, BR Wier, AP Omprakash, PS Chakraborty, ... IEEE Transactions on Electron Devices 64 (1), 37-44, 2016 | 11 | 2016 |
| An investigation of the use of inverse-mode SiGe HBTs as switching pairs for SET-mitigated RF mixers I Song, US Raghunathan, NE Lourenco, ZE Fleetwood, MA Oakley, ... IEEE Transactions on Nuclear Science 63 (2), 1099-1108, 2016 | 11 | 2016 |
| An investigation of high-temperature (to 300° C) safe-operating-area in a high-voltage complementary SiGe on SOI technology AP Omprakash, H Dao, US Raghunathan, H Ying, PS Chakraborty, ... IEEE Transactions on Electron Devices 64 (9), 3748-3755, 2017 | 9 | 2017 |
| Revisiting safe operating area: SiGe HBT aging models for reliability-aware circuit design BR Wier, RP Martinez, US Raghunathan, H Ying, S Zeinolabedinzadeh, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 8 | 2018 |
| TCAD modeling of accumulated damage during time-dependent mixed-mode stress US Raghunathan, PS Chakraborty, B Wier, JD Cressler, H Yasuda, ... 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 179-182, 2013 | 8 | 2013 |
| Variability of pn junctions and SiGe HBTs at cryogenic temperatures H Ying, JW Teng, US Raghunathan, JP Moody, JD Cressler IEEE Transactions on Electron Devices 68 (3), 987-993, 2021 | 7 | 2021 |
| Optimization of SiGe HBT RF switches for single-event transient mitigation I Song, S Jung, NE Lourenco, US Raghunathan, ZE Fleetwood, MK Cho, ... IEEE Transactions on Nuclear Science 62 (6), 3057-3063, 2015 | 7 | 2015 |
| The role of negative feedback effects on single-event transients in SiGe HBT analog circuits J Seungwoo, I Song, ZE Fleetwood, U Raghunathan, NE Lourenco, ... IEEE Transactions on Nuclear Science 62 (6), 2599-2605, 2015 | 7 | 2015 |
| DC and RF variability of SiGe HBTs operating down to deep cryogenic temperatures H Ying, JW Teng, GN Tzintzarov, AP Omprakash, SG Rao, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 6 | 2019 |
| Total ionizing dose effects on a high-voltage (> 30V) complementary SiGe on SOI technology AP Omprakash, ZE Fleetwood, US Raghunathan, A Ildefonso, ... IEEE Transactions on Nuclear Science 64 (1), 277-284, 2016 | 6 | 2016 |
| On the reliability of SiGe HBT cascode driver amplifiers MA Oakley, B Wier, US Raghunathan, PS Chakraborty, JD Cressler 2014 IEEE Radio Frequency Integrated Circuits Symposium, 445-448, 2014 | 6 | 2014 |
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia TechVerified email at ece.gatech.edu
