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Ali Darwish
Ali Darwish
Adj. Professor of Electrical Engineering, Johns Hopkins University, Scientist, Army Research Lab
Verified email at mail.mil
Title
Cited by
Cited by
Year
Subpicosecond gain and index nonlinearities in InGaAsP diode lasers
KL Hall, G Lenz, AM Darwish, EP Ippen
Optics communications 111 (5-6), 589-612, 1994
2651994
Thermal resistance calculation of AlGaN-GaN devices
AM Darwish, AJ Bayba, HA Hung
IEEE transactions on microwave theory and techniques 52 (11), 2611-2620, 2004
1972004
Femtosecond index nonlinearities in InGaAsP optical amplifiers
KL Hall, AM Darwish, EP Ippen, U Koren, G Raybon
Applied physics letters 62 (12), 1320-1322, 1993
1141993
Channel temperature analysis of GaN HEMTs with nonlinear thermal conductivity
A Darwish, AJ Bayba, HA Hung
IEEE Transactions on electron devices 62 (3), 840-846, 2015
932015
Accurate determination of thermal resistance of FETs
AM Darwish, AJ Bayba, HA Hung
IEEE transactions on microwave theory and techniques 53 (1), 306-313, 2005
902005
Dependence of GaN HEMT millimeter-wave performance on temperature
AM Darwish, BD Huebschman, E Viveiros, HA Hung
IEEE Transactions on Microwave Theory and Techniques 57 (12), 3205-3211, 2009
702009
AlGaN/GaN -Band 5-W MMIC Amplifier
AM Darwish, K Boutros, B Luo, BD Huebschman, E Viveiros, HA Hung
IEEE Transactions on Microwave Theory and Techniques 54 (12), 4456-4463, 2006
702006
Energy and water in Kuwait Part I. A sustainability view point
MA Darwish, FM Al-Awadhi, AM Darwish
Desalination 225 (1-3), 341-355, 2008
532008
Optimization of four‐wave mixing conversion efficiency in the presence of nonlinear loss
AM Darwish, EP Ippen, HQ Le, JP Donnelly, SH Groves
Applied physics letters 69 (6), 737-739, 1996
451996
Utilizing diode characteristics for GaN HEMT channel temperature prediction
AM Darwish, AJ Bayba, HA Hung
IEEE Transactions on Microwave Theory and Techniques 56 (12), 3188-3192, 2008
342008
IQ Imbalance Compensation and Digital Predistortion for Millimeter Wave Transmitters Using Reduced Sampling Rate Observations
Arthur Chung, Marwen Ben Rejeb, Yehia Beltagy, Ali M. Darwish, H. Alfred ...
IEEE Transactions on Microwave Theory and Techniques, 2018
272018
IQ Imbalance Compensation and Digital Predistortion for Millimeter Wave Transmitters Using Reduced Sampling Rate Observations
SB Arthur Chung, Marwen Ben Rejeb, Yehia Beltagy, Ali M. Darwish, H. Alfred Hung
IEEE Transactions on Microwave Theory and Techniques, 2018
272018
Energy and water in Kuwait: A sustainability viewpoint, Part II
MA Darwish, AM Darwish
Desalination 230 (1-3), 140-152, 2008
262008
4-watt Ka-band AlGaN/GaN power amplifier MMIC
AM Darwish, K Boutros, B Luo, B Huebschman, E Viveiros, HA Hung
2006 IEEE MTT-S International Microwave Symposium Digest, 730-733, 2006
252006
Ku-band MMIC's in low-cost, SMT compatible packages
HC Huang, A Ezzeddine, A Darwish, B Hsu, J Williams, S Peak
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of …, 2002
252002
Vertical balun and Wilkinson divider
A Darwish, A Ezzeddine, HC Huang, K Bumman, L Joonyoul, ...
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 02CH37278 …, 2002
252002
Nondegenerate four-wave mixing wavelength conversion in low-loss passive InGaAsP-InP quantum-well waveguides
JP Donnelly, HQ Le, EA Swanson, SH Groves, A Darwish, EP Ippen
IEEE Photonics Technology Letters 8 (5), 623-625, 1996
251996
Temperature dependence of GaN HEMT small signal parameters
AM Darwish, AA Ibrahim, HA Hung
International Journal of Microwave Science and Technology 2011, 2011
242011
Calculation of the nonlinear junction temperature for semiconductor devices using linear temperature values
AM Darwish, AJ Bayba, A Khorshid, A Rajaie, HA Hung
IEEE transactions on electron devices 59 (8), 2123-2128, 2012
192012
A 2.4 GHz SiGe HBT high voltage/high power amplifier
TJ Farmer, A Darwish, ME Zaghloul
IEEE microwave and wireless components letters 20 (5), 286-288, 2010
182010
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