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John D Ralston
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A three-color, solid-state, three-dimensional display
E Downing, L Hesselink, J Ralston, R Macfarlane
Science 273 (5279), 1185-1189, 1996
18351996
Binding of shallow donor impurities in quantum-well structures
NC Jarosik, BD McCombe, BV Shanabrook, J Comas, J Ralston, G Wicks
Physical review letters 54 (12), 1283, 1985
2811985
Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers
JD Ralston, S Weisser, I Esquivias, EC Larkins, J Rosenzweig, PJ Tasker, ...
IEEE Journal of quantum electronics 29 (6), 1648-1659, 1993
2201993
Mobile imaging application, device architecture, service platform architecture and services
J Ralston, S Saunders, K Kolarov
US Patent App. 11/357,661, 2006
1522006
Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices
JD Ralston, S O’brien, GW Wicks, LF Eastman
Applied physics letters 52 (18), 1511-1513, 1988
1391988
Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices
N Herres, F Fuchs, J Schmitz, KM Pavlov, J Wagner, JD Ralston, P Koidl, ...
Physical Review B 53 (23), 15688, 1996
1311996
Intersubband absorption and infrared photodetection at 3.5 and 4.2 μm in GaAs quantum wells
H Schneider, F Fuchs, B Dischler, JD Ralston, P Koidl
Applied physics letters 58 (20), 2234-2236, 1991
1301991
Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers
S Weisser, EC Larkins, K Czotscher, W Benz, J Daleiden, I Esquivias, ...
IEEE Photonics Technology Letters 8 (5), 608-610, 1996
1241996
Photoluminescence study of confined donors in GaAs Al x Ga 1− x As quantum wells
X Liu, A Petrou, BD McCombe, J Ralston, G Wicks
Physical Review B 38 (12), 8522, 1988
1131988
Defect structure and intermixing of ion‐implanted AlxGa1− xAs/GaAs superlattices
J Ralston, GW Wicks, LF Eastman, BC De Cooman, CB Carter
Journal of applied physics 59 (1), 120-123, 1986
1041986
Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy
J Schmitz, J Wagner, F Fuchs, N Herres, P Koidl, JD Ralston
Journal of crystal growth 150, 858-862, 1995
941995
Intermixing of AlxGa1−xAs/GaAs superlattices by pulsed laser irradiation
J Ralston, AL Moretti, RK Jain, FA Chambers
Applied physics letters 50 (25), 1817-1819, 1987
911987
System, method and apparatus of video processing and applications
J Ralston, S Saunders
US Patent App. 11/820,478, 2008
872008
Efficient software download to configurable communication device
JD Ralston, R Subramanian, S Chen, TE Williams
US Patent 7,188,159, 2007
822007
Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells
S Bürkner, M Maier, EC Larkins, W Rothemund, EP O’reilly, JD Ralston
Journal of Electronic materials 24, 805-812, 1995
791995
Impedance characteristics of quantum-well lasers
S Weisser, I Esquivias, PJ Tasker, JD Ralston, B Romero, J Rosenzweig
IEEE photonics technology letters 6 (12), 1421-1423, 1994
791994
System and method for real-time video communications
JD Ralston
US Patent 8,896,652, 2014
762014
Room‐temperature exciton electroabsorption in partially intermixed GaAs/AlGaAs quantum well waveguides
JD Ralston, WJ Schaff, DP Bour, LF Eastman
Applied physics letters 54 (6), 534-536, 1989
731989
Two‐color GaAs/(AlGa) As quantum well infrared detector with voltage‐tunable spectral sensitivity at 3–5 and 8–12 μm
K Kheng, M Ramsteiner, H Schneider, JD Ralston, F Fuchs, P Koidl
Applied physics letters 61 (6), 666-668, 1992
681992
Doping density dependence of intersubband transitions in GaAs/AlxGa1−xAs quantum‐well structures
M Ramsteiner, JD Ralston, P Koidl, B Dischler, H Biebl, J Wagner, ...
Journal of applied physics 67 (8), 3900-3903, 1990
641990
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