Emerging gallium nitride based devices SN Mohammad, AA Salvador, H Morkoc
Proceedings of the IEEE 83 (10), 1306-1355, 1995
882 1995 An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy S Strite, J Ruan, Z Li, A Salvador, H Chen, DJ Smith, WJ Choyke, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991
555 1991 High speed, low noise ultraviolet photodetectors based on GaN GY Xu, A Salvador, W Kim, Z Fan, C Lu, H Tang, H Morkoç, G Smith, ...
Applied physics letters 71 (15), 2154-2156, 1997
348 1997 GaN grown on hydrogen plasma cleaned 6H‐SiC substrates ME Lin, S Strite, A Agarwal, A Salvador, GL Zhou, N Teraguchi, A Rockett, ...
Applied physics letters 62 (7), 702-704, 1993
244 1993 Nature of Mg impurities in GaN JZ Li, JY Lin, HX Jiang, A Salvador, A Botchkarev, H Morkoc
Applied physics letters 69 (10), 1474-1476, 1996
204 1996 High transconductance-normally-off GaN MODFETs A Özgür, W Kim, Z Fan, A Botchkarev, A Salvador, SN Mohammad, ...
Electronics Letters 31 (16), 1389-1390, 1995
196 1995 Mechanisms of band‐edge emission in Mg‐doped p ‐type GaN M Smith, GD Chen, JY Lin, HX Jiang, A Salvador, BN Sverdlov, ...
Applied physics letters 68 (14), 1883-1885, 1996
183 * 1996 Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy F Hamdani, M Yeadon, DJ Smith, H Tang, W Kim, A Salvador, ...
Journal of applied physics 83 (2), 983-990, 1998
163 1998 Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN KT Tsen, DK Ferry, A Botchkarev, B Sverdlov, A Salvador, H Morkoc
Applied physics letters 72 (17), 2132-2134, 1998
142 1998 Mg‐doped p ‐type GaN grown by reactive molecular beam epitaxy W Kim, A Salvador, AE Botchkarev, O Aktas, SN Mohammad, H Morcoç
Applied Physics Letters 69 (4), 559-561, 1996
140 1996 Near-ideal platinum-GaN Schottky diodes SN Mohammad, Z Fan, AE Botchkarev, W Kim, O Aktas, A Salvador, ...
Electronics Letters 32 (6), 598-599, 1996
140 1996 Recombination dynamics of free and localized excitons in G a N/G a 0.93 Al 0.07 N quantum wells P Lefebvre, J Allègre, B Gil, A Kavokine, H Mathieu, W Kim, A Salvador, ...
Physical Review B 57 (16), R9447, 1998
127 1998 Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma‐enhanced molecular beam epitaxy DJ Smith, D Chandrasekhar, B Sverdlov, A Botchkarev, A Salvador, ...
Applied physics letters 67 (13), 1830-1832, 1995
122 1995 Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy DC Reynolds, DC Look, W Kim, Ö Aktas, A Botchkarev, A Salvador, ...
Journal of applied physics 80 (1), 594-596, 1996
117 1996 Deep‐center hopping conduction in GaN DC Look, DC Reynolds, W Kim, Ö Aktas, A Botchkarev, A Salvador, ...
Journal of applied physics 80 (5), 2960-2963, 1996
113 1996 An electronic nose using a single graphene FET and machine learning for water, methanol, and ethanol T Hayasaka, A Lin, VC Copa, LP Lopez Jr, RA Loberternos, ...
Microsystems & nanoengineering 6 (1), 50, 2020
112 2020 Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics W Kim, Ö Aktas, AE Botchkarev, A Salvador, SN Mohammad, H Morkoç
Journal of applied physics 79 (10), 7657-7666, 1996
111 1996 Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN KT Tsen, RP Joshi, DK Ferry, A Botchkarev, B Sverdlov, A Salvador, ...
Applied physics letters 68 (21), 2990-2992, 1996
110 1996 Excitonic recombination in GaN grown by molecular beam epitaxy M Smith, GD Chen, JZ Li, JY Lin, HX Jiang, A Salvador, WK Kim, O Aktas, ...
Applied physics letters 67 (23), 3387-3389, 1995
101 1995 Formation mechanism and relative stability of the P Ruterana, B Barbaray, A Béré, P Vermaut, A Hairie, E Paumier, G Nouet, ...
Physical Review B 59 (24), 15917, 1999
100 1999 