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Wenjuan Zhu
Wenjuan Zhu
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Title
Cited by
Cited by
Year
Tunable infrared plasmonic devices using graphene/insulator stacks
H Yan, X Li, B Chandra, G Tulevski, Y Wu, M Freitag, W Zhu, P Avouris, ...
Nature nanotechnology 7 (5), 330-334, 2012
13662012
Damping pathways of mid-infrared plasmons in graphene nanostructures
H Yan, T Low, W Zhu, Y Wu, M Freitag, X Li, F Guinea, P Avouris, F Xia
Nature Photonics 7 (5), 394-399, 2013
9872013
Structure and electronic transport in graphene wrinkles
W Zhu, T Low, V Perebeinos, AA Bol, Y Zhu, H Yan, J Tersoff, P Avouris
Nano letters 12 (7), 3431-3436, 2012
6672012
Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene
W Zhu, V Perebeinos, M Freitag, P Avouris
Physical Review B 80 (23), 235402, 2009
5982009
Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene
W Zhu, V Perebeinos, M Freitag, P Avouris
Physical Review B 80 (23), 235402, 2009
5982009
State-of-the-art graphene high-frequency electronics
Y Wu, KA Jenkins, A Valdes-Garcia, DB Farmer, Y Zhu, AA Bol, ...
Nano letters 12 (6), 3062-3067, 2012
5362012
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
W Zhu, T Low, YH Lee, H Wang, DB Farmer, J Kong, F Xia, P Avouris
Nature communications 5 (1), 3087, 2014
4832014
Current transport in metal/hafnium oxide/silicon structure
WJ Zhu, TP Ma, T Tamagawa, J Kim, Y Di
IEEE Electron Device Letters 23 (2), 97-99, 2002
4172002
Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...
Nature Electronics 4 (11), 786-799, 2021
3812021
Photocurrent in graphene harnessed by tunable intrinsic plasmons
M Freitag, T Low, W Zhu, H Yan, F Xia, P Avouris
Nature communications 4 (1), 1951, 2013
3622013
Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics
WJ Zhu, T Tamagawa, M Gibson, T Furukawa, TP Ma
IEEE Electron Device Letters 23 (11), 649-651, 2002
3432002
Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics
W Zhu, JP Han, TP Ma
IEEE Transactions on Electron Devices 51 (1), 98-105, 2004
2952004
Infrared spectroscopy of tunable Dirac terahertz magneto-plasmons in graphene
H Yan, Z Li, X Li, W Zhu, P Avouris, F Xia
Nano letters 12 (7), 3766-3771, 2012
2772012
Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers
Y Li, H Yan, DB Farmer, X Meng, W Zhu, RM Osgood, TF Heinz, P Avouris
Nano letters 14 (3), 1573-1577, 2014
2502014
Infrared spectroscopy of wafer-scale graphene
H Yan, F Xia, W Zhu, M Freitag, C Dimitrakopoulos, AA Bol, G Tulevski, ...
ACS nano 5 (12), 9854-9860, 2011
2302011
Charge trapping in ultrathin hafnium oxide
WJ Zhu, TP Ma, S Zafar, T Tamagawa
IEEE Electron Device Letters 23 (10), 597-599, 2002
2052002
Three-terminal graphene negative differential resistance devices
Y Wu, DB Farmer, W Zhu, SJ Han, CD Dimitrakopoulos, AA Bol, P Avouris, ...
ACS nano 6 (3), 2610-2616, 2012
1982012
Silicon nitride gate dielectrics and band gap engineering in graphene layers
W Zhu, D Neumayer, V Perebeinos, P Avouris
Nano letters 10 (9), 3572-3576, 2010
1912010
HfO/sub 2/and HfAlO for CMOS: thermal stability and current transport
W Zhu, TP Ma, T Tamagawa, Y Di, J Kim, R Carruthers, M Gibson, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
1632001
Ferroelectric tunneling junctions based on aluminum oxide/zirconium-doped hafnium oxide for neuromorphic computing
H Ryu, H Wu, F Rao, W Zhu
Scientific reports 9 (1), 20383, 2019
1622019
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Articles 1–20