| A kinetic simulation study of the mechanisms of aluminum induced layer exchange process A Sarikov, J Schneider, J Berghold, M Muske, I Sieber, S Gall, W Fuhs Journal of Applied Physics 107 (11), 2010 | 74 | 2010 |
| A simple model explaining the preferential (1 0 0) orientation of silicon thin films made by aluminum-induced layer exchange J Schneider, A Sarikov, J Klein, M Muske, I Sieber, T Quinn, HS Reehal, ... Journal of Crystal Growth 287 (2), 423-427, 2006 | 62 | 2006 |
| In-plane selective area InSb–Al nanowire quantum networks RLM Op het Veld, D Xu, V Schaller, MA Verheijen, SME Peters, J Jung, ... Communications Physics 3 (1), 59, 2020 | 51 | 2020 |
| Aluminum-induced crystallization: Nucleation and growth process J Schneider, A Schneider, A Sarikov, J Klein, M Muske, S Gall, W Fuhs Journal of Non-Crystalline Solids 352 (9-20), 972-975, 2006 | 51 | 2006 |
| New approaches and understandings in the growth of cubic silicon carbide FL Via, M Zimbone, C Bongiorno, A La Magna, G Fisicaro, I Deretzis, ... Materials 14 (18), 5348, 2021 | 41 | 2021 |
| Role of oxygen migration in the kinetics of the phase separation of nonstoichiometric silicon oxide films during high-temperature annealing A Sarikov, V Litovchenko, I Lisovskyy, I Maidanchuk, S Zlobin Applied Physics Letters 91 (13), 2007 | 40 | 2007 |
| Influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells NI Klyui, VG Litovchenko, AN Lukyanov, LV Neselevskaya, AV Sarikov, ... Technical physics 51, 654-658, 2006 | 40* | 2006 |
| Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries M Zimbone, A Sarikov, C Bongiorno, A Marzegalli, V Scuderi, ... Acta Materialia 213, 116915, 2021 | 28 | 2021 |
| Silicon nanocrystals in SiNx/SiO2 hetero-superlattices: The loss of size control after thermal annealing A Zelenina, A Sarikov, DM Zhigunov, C Weiss, N Zakharov, P Werner, ... Journal of Applied Physics 115 (24), 2014 | 25 | 2014 |
| Transformation of the structure of silicon oxide during the formation of Si nanoinclusions under thermal annealings IP Lisovskyy, MV Voitovych, AV Sarikov, VG Litovchenko, AB Romanyuk, ... Ukr J Phys 54 (4), 383-90, 2009 | 23 | 2009 |
| Gibbs free energy and equilibrium states in the Si/Si oxide systems A Sarikov, M Zacharias Journal of Physics: Condensed Matter 24 (38), 385403, 2012 | 22 | 2012 |
| Thickness and temperature depending intermixing of SiOx/SiO2 and SiOxNy/SiO2 superlattices: Experimental observation and thermodynamic modeling DM Zhigunov, A Sarikov, YM Chesnokov, AL Vasiliev, N Zakharov, ... Applied Physics Letters 108 (22), 2016 | 18 | 2016 |
| The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach E Scalise, L Barbisan, A Sarikov, F Montalenti, L Miglio, A Marzegalli Journal of Materials Chemistry C 8 (25), 8380-8392, 2020 | 17 | 2020 |
| Molecular dynamics simulations of extended defects and their evolution in 3C–SiC by different potentials A Sarikov, A Marzegalli, L Barbisan, E Scalise, F Montalenti, L Miglio Modelling and Simulation in Materials Science and Engineering 28 (1), 015002, 2019 | 17 | 2019 |
| Metal induced crystallization mechanism of the metal catalyzed growth of silicon wire-like crystals A Sarikov Applied Physics Letters 99 (14), 2011 | 16 | 2011 |
| Theoretical study of the kinetics of grain nucleation in the aluminium-induced layer-exchange process A Sarikov, J Schneider, M Muske, S Gall, W Fuhs Journal of non-crystalline solids 352 (9-20), 980-983, 2006 | 15 | 2006 |
| Theoretical study of the initial stage of the aluminium-induced layer-exchange process A Sarikov, J Schneider, J Klein, M Muske, S Gall Journal of crystal growth 287 (2), 442-445, 2006 | 15 | 2006 |
| Unveiling planar defects in hexagonal group IV materials EMT Fadaly, A Marzegalli, Y Ren, L Sun, A Dijkstra, D De Matteis, ... Nano Letters 21 (8), 3619-3625, 2021 | 14 | 2021 |
| Formation of size-controlled and luminescent Si nanocrystals from SiOxNy/Si3N4 hetero-superlattices A Zelenina, A Sarikov, S Gutsch, N Zakharov, P Werner, A Reichert, ... Journal of Applied Physics 117 (17), 2015 | 13 | 2015 |
| A model of preferential (100) crystal orientation of Si grains grown by aluminium-induced layer-exchange process A Sarikov, J Schneider, M Muske, I Sieber, S Gall Thin Solid Films 515 (19), 7465-7468, 2007 | 13 | 2007 |
Jens SchneiderHTWK LeipzigVerified email at htwk-leipzig.de
