| Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators M Faucher, B Grimbert, Y Cordier, N Baron, A Wilk, H Lahreche, P Bove, ... Applied Physics Letters 94 (23), 2009 | 55 | 2009 |
| Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm A Wilk, M El Gazouli, M El Skouri, P Christol, P Grech, AN Baranov, ... Applied Physics Letters 77 (15), 2298-2300, 2000 | 45 | 2000 |
| GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 m operation G Almuneau, F Genty, A Wilk, P Grech, A Joullié, L Chusseau Semiconductor science and technology 14 (1), 89, 1999 | 38 | 1999 |
| High-power 1.3 μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system A Wilk, AR Kovsh, SS Mikhrin, C Chaix, II Novikov, MV Maximov, ... Journal of crystal growth 278 (1-4), 335-341, 2005 | 37 | 2005 |
| Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission F Genty, G Almuneau, L Chusseau, A Wilk, S Gaillard, G Boissier, P Grech, ... Journal of crystal growth 201, 1024-1027, 1999 | 24 | 1999 |
| InAs (PSb)-based “W” quantum well laser diodes emitting near 3.3 μm A Joullié, EM Skouri, M Garcia, P Grech, A Wilk, P Christol, AN Baranov, ... Applied Physics Letters 76 (18), 2499-2501, 2000 | 22 | 2000 |
| MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers A Wilk, F Genty, B Fraisse, G Boissier, P Grech, M El Gazouli, P Christol, ... Journal of crystal growth 223 (3), 341-348, 2001 | 19 | 2001 |
| InAs/InAs (P, Sb) quantum-well laser structure for the midwavelength infrared region P Christol, P Bigenwald, A Wilk, A Joullie, O Gilard, H Carrere, ... IEE Proceedings-Optoelectronics 147 (3), 181-187, 2000 | 18 | 2000 |
| Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers A Joullié, G Glastre, R Blondeau, JC Nicolas, Y Cuminal, AN Baranov, ... IEEE Journal of selected topics in quantum electronics 5 (3), 711-714, 1999 | 16 | 1999 |
| Broadly and finely tunable hybrid silicon laser with nanosecond-scale switching speed B Stern, K Kim, C Calò, C Fortin, D Lanteri, K Mekhazni, JG Provost, ... Optics Letters 45 (22), 6198-6201, 2020 | 15 | 2020 |
| First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate V Hoel, N Defrance, JC De Jaeger, H Gerard, C Gaquière, H Lahreche, ... Electronics Letters 44 (3), 238-239, 2008 | 14 | 2008 |
| Recent achievements in SopSiC substrates for high power and high frequency applications R Langer, B Faure, A Boussagol, P Bove, H Lahreche, A Wilk, J Thuret, ... CS Mantech Conference, 24-27, 2006 | 12 | 2006 |
| MBE growth of InAs/InAsSb/InAlAsSb “W” quantum well laser diodes emitting near 3 μm A Wilk, B Fraisse, P Christol, G Boissier, P Grech, M El Gazouli, ... Journal of crystal growth 227, 586-590, 2001 | 12 | 2001 |
| CBr4 and Be heavily doped InGaAs grown in a production MBE system S Godey, S Dhellemmes, A Wilk, M Zaknoune, F Mollot Journal of crystal growth 278 (1-4), 600-603, 2005 | 11 | 2005 |
| Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy A Wilk, M Zaknoune, S Godey, S Dhellemmes, P Gerard, C Chaix, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 7 | 2004 |
| Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings JM Ramirez, A Souleiman, PF de la Horie, D Neel, N Vaissiere, V Ramez, ... Optics Express 30 (20), 36717-36726, 2022 | 6 | 2022 |
| Recent achievement in the AlGaN/GaN HEMT epitaxy on silicon and engineering substrates exhibiting improved performances H Lahreche, A Wilk, P Bove, M Lijadi, R Langer, J Thuret, JC De Jaeger, ... Proceedings of the 31th Workshop on Compound Semiconductor Devices and …, 2007 | 5 | 2007 |
| As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system S Dhellemmes, S Godey, A Wilk, X Wallart, F Mollot, RIPT Lab Journal of crystal growth 278 (1-4), 564-568, 2005 | 5 | 2005 |
| Novel technology of III-V die-bonded SOI photonic integrated circuits D Néel, A Shen, PF de La Horie, N Vaissière, A Wilk, V Muffato, ... Emerging Applications in Silicon Photonics II 11880, 35-45, 2021 | 3 | 2021 |
| Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 µm emission G Frederic, G Almuneau, L Chusseau, A Wilk, S Gaillard, G Boissier, ... J. Cryst. Growth 201, 202, 0 | 3 | |
Philippe ChristolIES, Université Montpellier, Franceبريد إلكتروني تم التحقق منه على ies.univ-montp2.fr
