| Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes ZA Jian, S Mohanty, E Ahmadi Applied Physics Letters 116 (15), 2020 | 51 | 2020 |
| Deep UV-assisted capacitance–voltage characterization of post-deposition annealed Al2O3/β-Ga2O3 (001) MOSCAPs ZA Jian, S Mohanty, E Ahmadi Applied Physics Letters 116 (24), 2020 | 19 | 2020 |
| Chlorine-based inductive coupled plasma etching of α-Ga2O3 ZA Jian, Y Oshima, S Wright, K Owen, E Ahmadi Semiconductor Science and Technology 34 (3), 035006, 2019 | 17 | 2019 |
| β-(Al,Ga)2O3 for High Power Applications — A Review on Material Growth and Device Fabrication A Jian, K Khan, E Ahmadi International Journal of High Speed Electronics and Systems 28 (01n02), 1940006, 2019 | 14 | 2019 |
| Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions S Mohanty, I Sayed, ZA Jian, U Mishra, E Ahmadi Applied Physics Letters 119 (4), 2021 | 13 | 2021 |
| Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) ZA Jian, I Sayed, W Liu, S Mohanty, E Ahmadi Applied Physics Letters 118 (17), 2021 | 13 | 2021 |
| Switching Performance Analysis of 3.5 kV Ga2O3 Power FinFETs ZA Jian, S Mohanty, E Ahmadi IEEE Transactions on Electron Devices 68 (2), 672-678, 2020 | 13 | 2020 |
| HfO2 as gate insulator on N-polar GaN–AlGaN heterostructures CJ Clymore, S Mohanty, ZA Jian, A Krishna, S Keller, E Ahmadi Semiconductor Science and Technology 36 (3), 035017, 2021 | 10 | 2021 |
| Design of ultra-scaled-channel N-polar GaN HEMTs with high charge density: A systematic study of hole traps and their impact on charge density in the channel S Mohanty, S Diez, ZA Jian, E Ahmadi Journal of Applied Physics 128 (23), 2020 | 7 | 2020 |
| Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) by post-metallization annealing ZA Jian, I Sayed, S Mohanty, W Liu, E Ahmadi Semiconductor Science and Technology 36 (9), 09LT03, 2021 | 6 | 2021 |
| Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric S Mohanty, Z Jian, K Khan, E Ahmadi Journal of Electronic Materials 52 (4), 2596-2602, 2023 | 4 | 2023 |
| Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy K Khan, ZA Jian, J Li, K Sun, E Ahmadi Journal of Crystal Growth 611, 127181, 2023 | 2 | 2023 |
| Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates ZA Jian, CJ Clymore, K Sun, U Mishra, E Ahmadi Applied Physics Letters 120 (14), 2022 | 2 | 2022 |
| Comparative analysis of selective area grown Ga-and N-polar InGaN/GaN nanowires for quantum emitters A Ghosh, K Khan, S Sankar, ZA Jian, S Hasan, E Ahmadi, S Arafin AIP Advances 14 (2), 2024 | | 2024 |
| Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer Z Jian, K Sun, S Kosanovic, CJ Clymore, U Mishra, E Ahmadi Advanced Electronic Materials 9 (8), 2300174, 2023 | | 2023 |
| A systematic study of interfacial property of HfO2 gate dielectric on N‐polar GaN S Mohanty, I Sayed, ZA Jian, U Mishra, E Ahmadi 79th Device Research Conference (DRC 2021), 2021 | | 2021 |
| Electrical Properties of MOCVD-Grown AlSiO Gate Dielectric on (001) β-Ga2O3 ZA Jian, I Sayed, W Liu, S Mohanty, E Ahmadi 63rd Electronic Materials Conference (EMC 2021), 2021 | | 2021 |
| Deep UV-assisted C-V Characterization of Post-deposition Annealed Al2O3/β-Ga2O3 (001) MOSCAPs ZA Jian, S Mohanty, E Ahmadi 78th Device Research Conference (DRC 2020), 2020 | | 2020 |
| Design of Ultra-Scaled Channel N-Polar GaN HEMTs with High Charge Density Using AlN-GaN Superlattice as the Backbarrier S Mohanty, SD Penzon, ZA Jian, E Ahmadi 62nd Electronic Materials Conference (EMC 2020), 2020 | | 2020 |
| Epitaxial Growth of relaxed InGaN films on Zn-face ZnO substrate by Plasma-Assisted Molecular Beam Epitaxy K Khan, SD Penzon, A Jian, E Ahmadi 61st Electronic Materials Conference (EMC 2019), 2019 | | 2019 |
Subhajit MohantyDepartment of Electrical Engineering and Computer Science, University of MichiganVerified email at umich.edu
