| Epitaxy of boron phosphide on aluminum nitride (0001)/sapphire substrate B Padavala, CD Frye, X Wang, Z Ding, R Chen, M Dudley, ... Crystal Growth & Design 16 (2), 981-987, 2016 | 77 | 2016 |
| Preparation, properties, and characterization of boron phosphide films on 4H-and 6H-silicon carbide B Padavala, CD Frye, Z Ding, R Chen, M Dudley, B Raghothamachar, ... Solid State Sciences 47, 55-60, 2015 | 24 | 2015 |
| Ultradeep electron cyclotron resonance plasma etching of GaN SE Harrison, LF Voss, AM Torres, CD Frye, Q Shao, RJ Nikolić Journal of Vacuum Science & Technology A 35 (6), 2017 | 23 | 2017 |
| Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence XZ Du, CD Frye, JH Edgar, JY Lin, HX Jiang Journal of Applied Physics 115 (5), 2014 | 23 | 2014 |
| Design considerations for three-dimensional betavoltaics JW Murphy, LF Voss, CD Frye, Q Shao, K Kazkaz, MA Stoyer, ... AIP Advances 9 (6), 2019 | 19 | 2019 |
| Titanium–indium oxy (nitride) with and without RuO2 loading as photocatalysts for hydrogen production under visible light from water Y Kuo, CD Frye, M Ikenberry, KJ Klabunde Catalysis today 199, 15-21, 2013 | 18 | 2013 |
| Seebeck Coefficient and Electrical Resistivity of Single Crystal B12As2at High Temperatures CD Frye, JH Edgar, I Ohkubo, T Mori Journal of the Physical Society of Japan 82 (9), 095001, 2013 | 16 | 2013 |
| Self-healing in B12P2 through Mediated Defect Recombination SP Huber, E Gullikson, CD Frye, JH Edgar, RWE van de Kruijs, F Bijkerk, ... Chemistry of materials 28 (22), 8415-8428, 2016 | 12 | 2016 |
| CVD growth and properties of boron phosphide on 3C-SiC B Padavala, CD Frye, X Wang, B Raghothamachar, JH Edgar Journal of Crystal Growth 449, 15-21, 2016 | 10 | 2016 |
| 1.1 kV vertical pin GaN-on-sapphire diodes SE Harrison, Q Shao, CD Frye, LF Voss, RJ Nikolić 2018 76th Device Research Conference (DRC), 1-2, 2018 | 9 | 2018 |
| Detection of defect populations in superhard semiconductor boron subphosphide B 12 P 2 through X-ray absorption spectroscopy SP Huber, E Gullikson, J Meyer-Ilse, CD Frye, JH Edgar, ... Journal of materials chemistry A 5 (12), 5737-5749, 2017 | 9 | 2017 |
| Beta radiation hardness of GYGAG (Ce) transparent ceramic scintillators JT Jarrell, NJ Cherepy, ZM Seeley, JW Murphy, EL Swanberg, LF Voss, ... IEEE Transactions on Nuclear Science 69 (4), 938-941, 2022 | 8 | 2022 |
| Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma CD Frye, SB Donald, CE Reinhardt, RJ Nikolic, LF Voss, SE Harrison Materials Research Letters 9 (2), 105-111, 2021 | 8 | 2021 |
| Selenium-iodide: A low melting point eutectic semiconductor LF Voss, JW Murphy, Q Shao, RA Henderson, CD Frye, MA Stoyer, ... Applied Physics Letters 113 (24), 2018 | 8 | 2018 |
| High temperature isotropic and anisotropic etching of silicon carbide using forming gas CD Frye, D Funaro, AM Conway, DL Hall, PV Grivickas, M Bora, LF Voss Journal of Vacuum Science & Technology A 39 (1), 2021 | 6 | 2021 |
| Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC CD Frye, CK Saw, B Padavala, RJ Nikolić, JH Edgar Journal of Crystal Growth 459, 112-117, 2017 | 6 | 2017 |
| Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching CD Frye, SB Donald, C Reinhardt, LF Voss, SE Harrison Journal of Vacuum Science & Technology A 39 (5), 2021 | 5 | 2021 |
| Demonstration of a three-dimensionally structured betavoltaic JW Murphy, CD Frye, RA Henderson, MA Stoyer, LF Voss, RJ Nikolic Journal of Electronic Materials 50, 1380-1385, 2021 | 4 | 2021 |
| Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC CD Frye, CK Saw, B Padavala, N Khan, RJ Nikolic, JH Edgar Crystal Growth & Design 18 (2), 669-676, 2018 | 4 | 2018 |
| ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness CD Frye, CE Reinhardt, SB Donald, LF Voss, SE Harrison Materials Science in Semiconductor Processing 144, 106564, 2022 | 3 | 2022 |
