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Lining Liu
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Advances in La-Based High-k Dielectrics for MOS Applications
L.N. Liu, W.M. Tang, P.T. Lai
Coatings 9 (4), 217, 2019
322019
Highly sensitive SWIR detector array based on nanoscale phototransistors integrated on CMOS readout
L Liu, J Rabinowitz, S Bianconi, MS Park, H Mohseni
Applied Physics Letters 117 (19), 2020
182020
Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation
LN Liu, HW Choi, JP Xu, PT Lai
Applied Physics Letters 107 (21), 2015
172015
High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric
LN Liu, HW Choi, JP Xu, PT Lai
Applied Physics Letters 110 (12), 2017
162017
Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation
L Liu, HW Choi, PT Lai, J Xu
Journal of Vacuum Science & Technology B 33 (5), 2015
142015
Single β-Ga2O3 nanowire based lateral FinFET on Si
Siyuan Xu, Lining Liu, Guangming Qu, Xingfei Zhang, Chunyang Jia, Songhao Wu ...
Applied Physics Letters 120 (15), 153501, 2022
132022
Transparent dual-band ultraviolet photodetector based on graphene/p-GaN/AlGaN heterojunction
Gang Wu, Libin Tang, Gongrong Deng, Lining Liu, Qun Hao, Shouzhang Yuan ...
Optics Express 30 (12), 21349, 2022
102022
GaAs metal–oxide–semiconductor capacitor with Nd-based high-k Oxynitrides as gate dielectric and passivation layer
LN Liu, HW Choi, JP Xu, WM Tang, PT Lai
IEEE Transactions on Electron Devices 65 (1), 72-78, 2017
102017
Substrate-Independent Broad-Band Immersion Microlens Arrays with a High Coupling Efficiency for Infrared Focal Plane Arrays
C.-M. Kang, S. Bianconi, T. Hamilton, J. Rabinowitz, S. Wheaton, L. Liu, M ...
ACS Applied Electronic Materials 4 (4), 1910, 2022
82022
Strategy for Addressing the Low Quantum Efficiency of Nanowire Photodetectors
S. Bianconi, J. Rabinowitz, C.-M. Kang, Lining Liu, M. Rezaei, H. Nawaz, and ...
ACS Photonics, 2022
62022
Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor
LN Liu, HW Choi, JP Xu, PT Lai
physica status solidi (RRL)–Rapid Research Letters 10 (9), 703-707, 2016
62016
Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook
C Jia, G Deng, L Liu, P Zhao, G Song, J Liu, Y Zhang
Journal of Physics D: Applied Physics 56 (43), 433001, 2023
42023
Single β-Ga2O3 Nanowire Back-gate Field-effect Transistor
Guangming Qu, Siyuan Xu, Lining Liu, Minglei Tang, Songhao Wu, Chunyang Jia ...
Semiconductor Science and Technology 37, 2022
42022
Improved electrical properties and reliability of GaAs metal–oxide–semiconductor capacitor by using LaAlON passivation layer
LN Liu, HW Choi, JP Xu, PT Lai
physica status solidi (RRL)–Rapid Research Letters 11 (9), 1700180, 2017
42017
Low frequency noise in β-Ga2O3 based nanoelectronic devices
M Tang, L Liu, C Jia, S Wu, YJ Lee, G Wang, Y Ma, DW Jeon, JH Park, ...
Applied Physics Letters 123 (1), 2023
32023
Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal-Oxide-Semiconductor Applications
LN Liu, WM Tang, XD Huang, JP Xu, and PT Lai
IEEE Transactions on Electron Devices 66 (7), 3080-3085, 2019
32019
UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate
Y Zhang, H Li, L Liu, P Li, L Wang, X Yi, G Wang
Journal of Nanophotonics 12 (4), 043502-043502, 2018
22018
Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric
YX Ma, LN Liu, WM Tang, PT Lai
2017 International Conference on Electron Devices and Solid-State Circuits …, 2017
22017
Design for improved NBTI reliability of CMOS digital IC
L Lining, L Bin, Z Mingjian, X Jiang
2010 IEEE International Conference of Electron Devices and Solid-State …, 2010
22010
β-Ga2O3 Air-Channel Field-Emission Nanodiode with Ultrahigh Current Density and Low Turn-On Voltage
Minglei Tang, Chicheng Ma, Lining Liu, Xiaolong Tan, Yan Li, Young Jin Lee ...
Nano Letters, 2024
12024
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