Polarization effects in nitride semiconductors and device structures H Morkoç, R Cingolani, B Gil
Material Research Innovations 3, 97-106, 1999
1363 1999 Hexagonal boron nitride is an indirect bandgap semiconductor G Cassabois, P Valvin, B Gil
Nature photonics 10 (4), 262-266, 2016
1205 2016 Photonics with hexagonal boron nitride JD Caldwell, I Aharonovich, G Cassabois, JH Edgar, B Gil, DN Basov
Nature Reviews Materials 4 (8), 552-567, 2019
693 2019 Group III nitride semiconductor compounds: physics and applications B Gil
(No Title), 1998
549 1998 Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga) N/GaN quantum wells M Leroux, N Grandjean, M Laügt, J Massies, B Gil, P Lefebvre, ...
Physical Review B 58 (20), R13371, 1998
466 1998 ZnO as a material mostly adapted for the realization of room-temperature polariton lasers M Zamfirescu, A Kavokin, B Gil, G Malpuech, M Kaliteevski
Physical Review B 65 (16), 161205, 2002
455 2002 Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry B Gil, O Briot, RL Aulombard
Physical Review B 52 (24), R17028, 1995
424 1995 High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ...
Applied Physics Letters 78 (9), 1252-1254, 2001
309 2001 Barrier-width dependence of group-III nitrides quantum-well transition energies M Leroux, N Grandjean, J Massies, B Gil, P Lefebvre, P Bigenwald
Physical Review B 60 (3), 1496, 1999
265 1999 Raman determination of phonon deformation potentials in α-GaN F Demangeot, J Frandon, MA Renucci, O Briot, B Gil, RL Aulombard
Solid state communications 100 (4), 207-210, 1996
243 1996 Internal electric field in wurtzite C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ...
Physical Review B 72 (24), 241305, 2005
239 2005 Direct band-gap crossover in epitaxial monolayer boron nitride C Elias, P Valvin, T Pelini, A Summerfield, CJ Mellor, TS Cheng, L Eaves, ...
Nature communications 10 (1), 2639, 2019
230 2019 Efficient single photon emission from a high-purity hexagonal boron nitride crystal LJ Martínez, T Pelini, V Waselowski, JR Maze, B Gil, G Cassabois, ...
Physical review B 94 (12), 121405, 2016
213 2016 Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl) N quantum wells P Lefebvre, J Allègre, B Gil, H Mathieu, N Grandjean, M Leroux, J Massies, ...
Physical Review B 59 (23), 15363, 1999
197 1999 Photon Bloch oscillations in porous silicon optical superlattices V Agarwal, JA Del Río, G Malpuech, M Zamfirescu, A Kavokin, D Coquillat, ...
Physical review letters 92 (9), 097401, 2004
160 2004 Optical properties of GaN epilayers on sapphire M Tchounkeu, O Briot, B Gil, JP Alexis, RL Aulombard
Journal of applied physics 80 (9), 5352-5360, 1996
156 1996 Polariton lasing in a hybrid bulk ZnO microcavity T Guillet, M Mexis, J Levrat, G Rossbach, C Brimont, T Bretagnon, B Gil, ...
Applied Physics Letters 99 (16), 2011
149 2011 Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors H Morkoç, R Cingolani, B Gil
Solid-State Electronics 43 (10), 1909-1927, 1999
148 1999 Radiative lifetime of a single electron-hole pair in T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ...
Physical Review B 73 (11), 113304, 2006
147 2006 III-Nitride Semiconductors and their Modern Devices B Gil
OUP Oxford, 2013
141 2013 