High‐Gain and Low‐Driving‐Voltage Photodetectors Based on Organolead Triiodide Perovskites R Dong, Y Fang, J Chae, J Dai, Z Xiao, Q Dong, Y Yuan, A Centrone, ...
Advanced Materials 27 (11), 1912-1918, 2015
577 2015 Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag∕ La 0.7 Ca 0.3 MnO 3∕ Pt heterostructures DS Shang, Q Wang, LD Chen, R Dong, XM Li, WQ Zhang
Physical Review B 73 (24), 245427, 2006
348 2006 Reproducible hysteresis and resistive switching in metal- R Dong, DS Lee, WF Xiang, SJ Oh, DJ Seong, SH Heo, HJ Choi, ...
Applied physics letters 90 (4), 042107, 2007
225 2007 Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors Z Guo, R Dong, PS Chakraborty, N Lourenco, J Palmer, Y Hu, M Ruan, ...
Nano letters, 2013
197 2013 An Ultraviolet‐to‐NIR Broad Spectral Nanocomposite Photodetector with Gain R Dong, C Bi, Q Dong, F Guo, Y Yuan, Y Fang, Z Xiao, J Huang
Advanced Optical Materials 2 (6), 549-554, 2014
182 2014 Resistance switching of copper doped D Lee, D Seong, I Jo, F Xiang, R Dong, S Oh, H Hwang
Applied Physics Letters 90 (12), 122104, 2007
180 2007 Uniform resistive switching with a thin reactive metal interface layer in metal- M Hasan, R Dong, HJ Choi, DS Lee, DJ Seong, MB Pyun, H Hwang
Applied Physics Letters 92 (20), 202102, 2008
123 2008 Progress in fabrication of transition metal dichalcogenides heterostructure systems R Dong, I Kuljanishvili
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
103 2017 Epitaxial graphene on silicon carbide: Introduction to structured graphene M Ruan, Y Hu, Z Guo, R Dong, J Palmer, J Hankinson, C Berger, ...
Mrs Bulletin 37 (12), 1138-1147, 2012
91 2012 Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications D Lee, D Seong, H jung Choi, I Jo, R Dong, W Xiang, S Oh, M Pyun, ...
2006 International Electron Devices Meeting, 1-4, 2006
82 2006 Improvement of reproducible hysteresis and resistive switching in metal- R Dong, WF Xiang, DS Lee, SJ Oh, DJ Seong, SH Heo, HJ Choi, ...
Applied physics letters 90 (18), 182118, 2007
81 2007 Retention behavior of the electric-pulse-induced reversible resistance change effect in R Dong, Q Wang, LD Chen, DS Shang, TL Chen, XM Li, WQ Zhang
Applied Physics Letters 86 (17), 172107, 2005
81 2005 Structured epitaxial graphene: growth and properties Y Hu, M Ruan, Z Guo, R Dong, J Palmer, J Hankinson, C Berger, ...
Journal of Physics D: Applied Physics 45 (15), 154010, 2012
75 2012 Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory R Dong, DS Lee, MB Pyun, M Hasan, HJ Choi, MS Jo, DJ Seong, ...
Applied Physics A 93 (2), 409-414, 2008
46 2008 Nanoscale resistive switching of a copper–carbon-mixed layer for nonvolatile memory applications H Choi, M Pyun, TW Kim, M Hasan, R Dong, J Lee, JB Park, J Yoon, ...
IEEE electron device letters 30 (3), 302-304, 2009
37 2009 Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications M Pyun, H Choi, JB Park, D Lee, M Hasan, R Dong, SJ Jung, J Lee, ...
Applied Physics Letters 93 (21), 212907, 2008
34 2008 A materials approach to resistive switching memory oxides M Hasan, R Dong, DS Lee, DJ Seong, HJ Choi, MB Pyun, H Hwang
JSTS: Journal of Semiconductor Technology and Science 8 (1), 66-79, 2008
30 2008 Heteroepitaxial growth of Nb-doped W Xiang, R Dong, D Lee, S Oh, D Seong, H Hwang
Applied physics letters 90 (5), 052110, 2007
26 2007 Dependence of the Metal Electrode and Improved Pulse Switching Speed of La0. 7Ca0. 3MnO3 as a Resistance Change Memory Device M Hasan, R Dong, H Choi, J Yoon, J Park, D Seong, H Hwang
Journal of The Electrochemical Society 156 (4), H239, 2009
21 2009 Effect of ruthenium oxide electrode on the resistive switching of Nb-doped strontium titanate M Hasan, R Dong, HJ Choi, DS Lee, DJ Seong, MB Pyun, H Hwang
Applied Physics Letters 93 (5), 052908, 2008
21 2008 