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Bekir Gürbulak
Bekir Gürbulak
Verified email at atauni.edu.tr
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Cited by
Year
The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices
A Politano, G Chiarello, R Samnakay, G Liu, B Gürbulak, S Duman, ...
Nanoscale 8 (16), 8474-8479, 2016
1152016
Liquid‐phase exfoliated indium–selenide flakes and their application in hydrogen evolution reaction
E Petroni, E Lago, S Bellani, DW Boukhvalov, A Politano, B Gürbulak, ...
Small 14 (26), 1800749, 2018
1052018
Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol–gel spin technique
EF Keskenler, M Tomakin, S Doğan, G Turgut, S Aydın, S Duman, ...
Journal of Alloys and Compounds 550, 129-132, 2013
852013
Indium selenide: an insight into electronic band structure and surface excitations
A Politano, D Campi, M Cattelan, I Ben Amara, S Jaziri, A Mazzotti, ...
Scientific reports 7 (1), 3445, 2017
732017
Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes
S Doğan, S Duman, B Gürbulak, S Tüzemen, H Morkoc
Physica E: Low-dimensional Systems and Nanostructures 41 (4), 646-651, 2009
662009
The advent of indium selenide: Synthesis, electronic properties, ambient stability and applications
DW Boukhvalov, B Gürbulak, S Duman, L Wang, A Politano, LS Caputi, ...
Nanomaterials 7 (11), 372, 2017
642017
Structural characterizations and optical properties of InSe and InSe: Ag semiconductors grown by Bridgman/Stockbarger technique
B Gürbulak, M Şata, S Dogan, S Duman, A Ashkhasi, EF Keskenler
Physica E: Low-dimensional Systems and Nanostructures 64, 106-111, 2014
562014
Liquid phase exfoliated indium selenide based highly sensitive photodetectors
N Curreli, M Serri, D Spirito, E Lago, E Petroni, B Martín‐García, ...
Advanced Functional Materials 30 (13), 1908427, 2020
532020
Enhanced electrocatalytic activity in GaSe and InSe nanosheets: the role of surface oxides
G D'Olimpio, S Nappini, M Vorokhta, L Lozzi, F Genuzio, TO Menteş, ...
Advanced Functional Materials 30 (43), 2005466, 2020
442020
The Urbach tails and optical absorption in layered semiconductor TlGaSe2 and TlGaS2 single crystals
B Gürbulak, S Duman, A Ateş
Czechoslovak Journal of Physics 55, 93-103, 2005
362005
Capacitance and conductance–frequency characteristics of Au–Sb/p-GaSe: Gd Schottky barrier diode
S Duman, B Gürbulak, S Doğan, A Türüt
Vacuum 85 (8), 798-801, 2011
352011
The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes
S Duman, S Dogan, B Gürbulak, A Türüt
Applied Physics A 91, 337-340, 2008
332008
Temperature dependence of galvanomagnetic properties for Gd doped and undoped -type GaSe
B Gürbulak, M Yildirim, S Tüzemen, H Efeoǧlu, YK Yoǧurtçu
Journal of applied physics 83 (4), 2030-2034, 1998
331998
Growth and temperature dependence of optical properties of Er doped and undoped n-Type InSe
B Gürbulak, M Yildirim, A Ateş, S Doğan, YK Yoğurtçu
Japanese journal of applied physics 38 (9R), 5133, 1999
321999
Fabrication and characterization of Al/Cu2ZnSnS4/n‐Si/Al heterojunction photodiodes
G Turgut, EF Keskenler, S Aydın, S Doğan, S Duman, Ş Özçelik, ...
physica status solidi (a) 211 (3), 580-586, 2014
302014
The effects of the temperature and annealing on current–voltage characteristics of Ni/n-type 6H–SiC Schottky diode
A Sefaoğlu, S Duman, S Doğan, B Gürbulak, S Tüzemen, A Türüt
Microelectronic engineering 85 (3), 631-635, 2008
302008
Mass attenuation coefficients for n-type InSe, InSe: Gd, InSe: Ho and InSe: Er single crystals
O İçelli, S Erzeneoǧlu, B Gürbulak
Journal of Quantitative Spectroscopy and Radiative Transfer 90 (3-4), 399-407, 2005
302005
The optical investigation of TlGa0. 999Pr0. 001Se2 and TlGaSe2 single crystals
B Gürbulak
Physica B: Condensed Matter 293 (3-4), 289-296, 2001
302001
Growth and optical properties of Dy doped and undoped n-type InSe single crystal
B Gürbulak
Solid state communications 109 (10), 665-669, 1999
301999
Growth and Optical Properties of Ho Doped n‐Type Indium Selenide
B Gürbulak, M Yildirim, B Abay, S Tüzemen, M Alieva, YK Yoğurtç
physica status solidi (a) 168 (2), 495-500, 1998
271998
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