| MBE HgCdTe technology: a very general solution to IR detection, described by “Rule 07”, a very convenient heuristic WE Tennant, D Lee, M Zandian, E Piquette, M Carmody Journal of Electronic Materials 37 (9), 1406-1410, 2008 | 363 | 2008 |
| Teledyne Imaging Sensors: infrared imaging technologies for astronomy and civil space JW Beletic, R Blank, D Gulbransen, D Lee, M Loose, EC Piquette, ... High Energy, Optical, and Infrared Detectors for Astronomy III 7021, 161-174, 2008 | 233 | 2008 |
| High voltage (450 V) GaN schottky rectifiers ZZ Bandić, PM Bridger, EC Piquette, TC McGill, RP Vaudo, VM Phanse, ... Applied physics letters 74 (9), 1266-1268, 1999 | 223 | 1999 |
| Minority carrier diffusion length and lifetime in GaN ZZ Bandić, PM Bridger, EC Piquette, TC McGill Applied physics letters 72 (24), 3166-3168, 1998 | 179 | 1998 |
| Electron diffusion length and lifetime in p-type GaN ZZ Bandić, PM Bridger, EC Piquette, TC McGill Applied physics letters 73 (22), 3276-3278, 1998 | 135 | 1998 |
| Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy PM Bridger, ZZ Bandić, EC Piquette, TC McGill Applied physics letters 74 (23), 3522-3524, 1999 | 119 | 1999 |
| High-operating temperature HgCdTe: A vision for the near future D Lee, M Carmody, E Piquette, P Dreiske, A Chen, A Yulius, D Edwall, ... Journal of Electronic Materials 45 (9), 4587-4595, 2016 | 111 | 2016 |
| The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices ZZ Bandić, PM Bridger, EC Piquette, TC McGill Solid-State Electronics 44 (2), 221-228, 2000 | 85 | 2000 |
| Law 19: The ultimate photodiode performance metric D Lee, P Dreiske, J Ellsworth, R Cottier, A Chen, S Tallaricao, A Yulius, ... Infrared Technology and Applications XLVI 11407, 93-105, 2020 | 55 | 2020 |
| H2RG focal plane array and camera performance update R Blank, S Anglin, JW Beletic, S Bhargava, R Bradley, CA Cabelli, J Chen, ... High Energy, Optical, and Infrared Detectors for Astronomy V 8453, 280-295, 2012 | 53 | 2012 |
| Recent progress in MBE growth of CdTe and HgCdTe on (211) B GaAs substrates M Carmody, A Yulius, D Edwall, D Lee, E Piquette, R Jacobs, D Benson, ... Journal of electronic materials 41, 2719-2724, 2012 | 49 | 2012 |
| Small-pitch HgCdTe photodetectors WE Tennant, DJ Gulbransen, A Roll, M Carmody, D Edwall, A Julius, ... Journal of electronic materials 43 (8), 3041-3046, 2014 | 42 | 2014 |
| Solid phase recrystallization of ZnS thin films on sapphire ZZ Bandić, EC Piquette, JO McCaldin, TC McGill Applied physics letters 72 (22), 2862-2864, 1998 | 41 | 1998 |
| Properties and characteristics of the nancy grace roman space telescope h4rg-10 detectors G Mosby Jr, BJ Rauscher, C Bennett, ES Cheng, S Cheung, A Cillis, ... Journal of Astronomical Telescopes, Instruments, and Systems 6 (4), 046001 …, 2020 | 40 | 2020 |
| Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire EC Piquette, PM Bridger, ZZ Bandić, TC McGill Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 38 | 1999 |
| Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTe CH Swartz, RP Tompkins, NC Giles, TH Myers, DD Edwall, J Ellsworth, ... Journal of electronic materials 33, 728-736, 2004 | 37 | 2004 |
| Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe D Edwall, E Piquette, J Ellsworth, J Arias, CH Swartz, L Bai, RP Tompkins, ... Journal of electronic materials 33, 752-756, 2004 | 37 | 2004 |
| XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces RA Beach, EC Piquette, TC McGill, TJ Watson MRS Online Proceedings Library 537, 1-6, 1998 | 37 | 1998 |
| Correlation between the surface defect distribution and minority carrier transport properties in GaN PM Bridger, ZZ Bandić, EC Piquette, TC McGill Applied physics letters 73 (23), 3438-3440, 1998 | 34 | 1998 |
| Status of LWIR HgCdTe-on-silicon FPA technology M Carmody, JG Pasko, D Edwall, E Piquette, M Kangas, S Freeman, ... Journal of electronic materials 37, 1184-1188, 2008 | 32 | 2008 |
