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Jingshan (Julie) Wang
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The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
11672018
Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
L Cao, J Wang, G Harden, H Ye, R Stillwell, AJ Hoffman, P Fay
Applied Physics Letters 112 (26), 2018
1192018
High voltage, high current GaN-on-GaN pn diodes with partially compensated edge termination
J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay
Applied Physics Letters 113 (2), 2018
1092018
Polarization-engineered III-nitride heterojunction tunnel field-effect transistors
W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
1032015
Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching
C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ...
physica status solidi (b) 254 (8), 1600774, 2017
442017
Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE
T Ciarkowski, N Allen, E Carlson, R McCarthy, C Youtsey, J Wang, P Fay, ...
Materials 12 (15), 2455, 2019
322019
High-voltage vertical GaN pn diodes by epitaxial liftoff from bulk GaN substrates
J Wang, R McCarthy, C Youtsey, R Reddy, J Xie, E Beam, L Guido, L Cao, ...
IEEE Electron Device Letters 39 (11), 1716-1719, 2018
242018
Temperature dependence of electron and hole impact ionization coefficients in GaN
L Cao, Z Zhu, G Harden, H Ye, J Wang, A Hoffman, PJ Fay
IEEE Transactions on Electron Devices 68 (3), 1228-1234, 2021
232021
Thin-film GaN Schottky diodes formed by epitaxial lift-off
J Wang, C Youtsey, R McCarthy, R Reddy, N Allen, L Guido, J Xie, ...
Applied Physics Letters 110 (17), 2017
232017
High voltage vertical pn diodes with ion-implanted edge termination and sputtered SiNx passivation on GaN substrates
J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay
2017 IEEE International Electron Devices Meeting (IEDM), 9.6. 1-9.6. 4, 2017
192017
Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation
Y Cao, JW Pomeroy, MJ Uren, F Yang, J Wang, P Fay, M Kuball
Applied Physics Letters 120 (24), 2022
112022
First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC
SM Islam, M Qi, B Song, K Nomoto, V Protasenko, J Wang, S Rouvimov, ...
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
82016
Ion-implanted triple-zone graded junction termination extension for vertical GaN pn diodes
Y Duan, J Wang, Z Zhu, G Piao, K Ikenaga, H Tokunaga, S Koseki, ...
Applied Physics Letters 122 (21), 2023
62023
Avalanche multiplication noise in GaN p–n junctions grown on native GaN substrates
L Cao, H Ye, J Wang, P Fay
physica status solidi (b) 257 (2), 1900373, 2020
62020
W-band GaN IMPATT diodes for high power millimeter-wave generation
L Cao, H Ye, J Wang, P Fay
2019 IEEE National Aerospace and Electronics Conference (NAECON), 728-731, 2019
52019
1.7-kV vertical GaN pn diode with triple-zone graded junction termination extension formed by ion-implantation
Y Duan, J Wang, A Xie, Z Zhu, P Fay
e-Prime-Advances in Electrical Engineering, Electronics and Energy 6, 100330, 2023
42023
Ferroelectric-gated GaN HEMTs for RF and mm-wave switch applications
H Ye, C Wu, N Venkatesan, J Wang, Y Cao, A Xie, E Beam, P Fay
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
42022
Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates
J Wang, R McCarthy, C Youtsey, R Reddy, J Xie, E Beam, L Guido, L Cao, ...
physica status solidi (a) 216 (4), 1800652, 2019
42019
Vertical GaN-on-GaN pn diodes with 10-A forward current and 1.6 kV breakdown voltage
J Wang, L Cao, J Xie, E Beam, C Youtsey, R McfCarthy, L Guido, P Fay
2018 76th Device Research Conference (DRC), 1-2, 2018
42018
Thin-Film GaN p-n Diodes and Epitaxial Lift-Off From GaN Substrates
J Wang, C Youtsey, R McCarthy, R Reddy, N Allen, L Guido, A Xie, ...
Int’l. Symp. Compound Semiconductor Week (CSW), B8.5, 2017
42017
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