| Robust sub-100 nm T-Gate fabrication process using multi-step development K Karami, A Dhongde, H Cheng, PM Reynolds, BA Reddy, D Ritter, C Li, ... Micro and Nano Engineering 19, 100211, 2023 | 2 | 2023 |
| Reliable T-gate Process for THz HEMTs H Cheng, A Dhongde, K Karami, P Reynolds, S Thoms, E Wasige, C Li | 2 | 2022 |
| Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs A Ofiare, S Taking, K Karami, A Dhongde, A Al-Khalidi, E Wasige International Journal of Nanoelectronics and Materials 14, 29-36, 2021 | 2 | 2021 |
| The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs A Dhongde, S Taking, M Elksne, S Samanta, A Ofiare, K Karami, ... International Journal of Nanoelectronics and Materials 14, 21-28, 2021 | 2 | 2021 |
| High performance of AlGaN/GaN HEMTs using buffer-free GaN on SiC structure A Dhongde, S Taking, M Elksne, A Ofiare, K Karami, M Dwidar, ... | 1 | 2022 |
| High performance of n++ GaN/AlN/GaN high electron mobility transistor K Karami, S Taking, A Ofiare, A Dhongde, A Al-Khalidi, E Wasige | 1 | 2021 |
| Heavily doped n++ GaN cap layer AlN/GaN metal oxide semiconductor high electron mobility transistor K Karami, S Taking, A Dhongde, A Ofiare, A Al-Khalidi, E Wasige International Journal of Nanoelectronics and Materials 14, 45-51, 2021 | 1 | 2021 |
| Evaluation of DC Performance of Buffer-Free AlGaN/GaN HEMT on SiC Relative to the Thickness of AlN Nucleation Layer S Hassan, NB Kadandani, K Karami, M Dwidar, E Wasige, A Al-khalidi 2023 14th International Renewable Energy Congress (IREC), 1-4, 2023 | | 2023 |
| Buffer-Free GaN-on-SiC HEMTs with Bond Pad Heat Sinks A Dhongde, A Ofiare, K Karami, E Wasige | | 2023 |
| Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs K Karami, S Hassan, S Taking, A Ofiare, A Dhongde, A Al-Khalidi, ... International Journal of Electronics and Communication Engineering, 47-50, 2023 | | 2023 |
| Scalable and CMOS-Compatible Superconducting Qubit Fabrication Process for Quantum Computing Applications J Paul, V Seferai, K Karami, J Bronstein, J Grant, P Reynolds, S Thoms, ... | | 2023 |
| GaN HEMT technology for W-band frequency applications K Karami University of Glasgow, 2023 | | 2023 |
| DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall A Dhongde, S Taking, A Ofiare, K Karami, M Elksne, M Dwidar, ... | | 2022 |
| Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates A Dhongde, M Elksne, K Karami, E Wasige | | 2022 |
| Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors K Karami, S Taking, A Ofiare, M Elksne, A Dhongde, A Al-Khalidi, ... | | 2022 |
Sanna TakingSchool of Microelectronic Engineering, Universiti Malaysia PerlisVerified email at unimap.edu.my
