Wanjun Chen
Cited by
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Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
J Chen, C Wanjun, Z Chunhua
US Patent 8,076,699, 2011
High-performance AlGaN∕ GaN lateral field-effect rectifiers compatible with high electron mobility transistors
W Chen, KY Wong, W Huang, KJ Chen
Applied physics letters 92 (25), 2008
Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT
W Chen, KY Wong, KJ Chen
Electron Device Letters, IEEE 30 (5), 430-432, 2009
GaN power integration for high frequency and high efficiency power applications: A review
R Sun, J Lai, W Chen, B Zhang
IEEE Access 8, 15529-15542, 2020
7.6 V Threshold Voltage High Performance Normally-off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering
Q Zhou, L Liu, A Zhang, B Chen, Y Jin, Y Shi, Z Wang, W Chen, B Zhang
IEEE, 2016
High-voltage LDMOS with charge-balanced surface low on-resistance path layer
B Zhang, W Wang, W Chen, Z Li, Z Li
IEEE Electron device letters 30 (8), 849-851, 2009
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNₓ Passivation and High-Temperature Gate Recess
Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ...
IEEE, 2016
A snapback suppressed reverse-conducting IGBT with a floating p-region in trench collector
H Jiang, B Zhang, W Chen, Z Li, C Liu, Z Rao, B Dong
IEEE Electron device letters 33 (3), 417-419, 2012
Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters
W Chen, KY Wong, KJ Chen
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Carrier Transport Mechanisms Underlying the Bidirectional Shift in p-GaN Gate HEMTs Under Forward Gate Stress
Y Shi, Q Zhou, Q Cheng, P Wei, L Zhu, D Wei, A Zhang, W Chen, B Zhang
IEEE Transactions on Electron Devices 66 (2), 876-882, 2018
Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing
J Zhang, S Huang, Q Bao, X Wang, K Wei, Y Zheng, Y Li, C Zhao, X Liu, ...
Applied Physics Letters 107 (26), 2015
Electric field distribution around drain-side gate edge in AlGaN/GaN HEMTs: Analytical approach
J Si, J Wei, W Chen, B Zhang
IEEE transactions on electron devices 60 (10), 3223-3229, 2013
Ultralow-contact-resistance Au-free ohmic contacts with low annealing temperature on AlGaN/GaN heterostructures
J Zhang, X Kang, X Wang, S Huang, C Chen, K Wei, Y Zheng, Q Zhou, ...
IEEE Electron Device Letters 39 (6), 847-850, 2018
GaN smart power IC technology
KY Wong, W Chen, X Liu, C Zhou, KJ Chen
physica status solidi (b) 247 (7), 1732-1734, 2010
Integrated voltage reference and comparator circuits for GaN smart power chip technology
KY Wong, W Chen, KJ Chen
2009 21st International Symposium on Power Semiconductor Devices & IC's, 57-60, 2009
Schottky-ohmic drain AlGaN/GaN normally off HEMT with reverse drain blocking capability
C Zhou, W Chen, EL Piner, KJ Chen
IEEE electron device letters 31 (7), 668-670, 2010
Schottky-contact technology in InAlN/GaN HEMTs for breakdown voltage improvement
Q Zhou, W Chen, S Liu, B Zhang, Z Feng, S Cai, KJ Chen
IEEE transactions on electron devices 60 (3), 1075-1081, 2013
Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs
Z Liu, S Huang, Q Bao, X Wang, K Wei, H Jiang, H Cui, J Li, C Zhao, X Liu, ...
Journal of Vacuum Science & Technology B 34 (4), 2016
Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection
Y Shi, Q Zhou, Q Cheng, P Wei, L Zhu, D Wei, A Zhang, W Chen, B Zhang
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions
X Deng, H Zhu, X Li, X Tong, S Gao, Y Wen, S Bai, W Chen, K Zhou, ...
IEEE transactions on power electronics 35 (8), 8524-8531, 2020
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