Laleh Najafizadeh
Laleh Najafizadeh
Associate Professor of Electrical and Computer Engineering, Rutgers University
Verified email at ece.rutgers.edu - Homepage
Title
Cited by
Cited by
Year
Extreme environment electronics
JD Cressler, HA Mantooth
CRC Press, 2013
225*2013
Capturing dynamic patterns of task-based functional connectivity with EEG
N Karamzadeh, A Medvedev, A Azari, A Gandjbakhche, L Najafizadeh
NeuroImage 66, 311-317, 2013
662013
Application of RHBD techniques to SEU hardening of third-generation SiGe HBT logic circuits
R Krithivasan, PW Marshall, M Nayeem, AK Sutton, WM Kuo, ...
IEEE Transactions on Nuclear Science 53 (6), 3400-3407, 2006
542006
Sub-1-K operation of SiGe transistors and circuits
L Najafizadeh, JS Adams, SD Phillips, KA Moen, JD Cressler, S Aslam, ...
IEEE Electron Device Letters 30 (5), 508-510, 2009
522009
Towards a sub-1 V CMOS voltage reference
L Najafizadeh, IM Filanovsky
2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No …, 2004
422004
BER analysis of arbitrary QAM for MRC diversity with imperfect channel estimation in generalized Ricean fading channels
L Najafizadeh, C Tellambura
IEEE transactions on vehicular technology 55 (4), 1239-1248, 2006
392006
CMOS reliability issues for emerging cryogenic Lunar electronics applications
T Chen, C Zhu, L Najafizadeh, B Jun, A Ahmed, R Diestelhorst, G Espinel, ...
Solid-state electronics 50 (6), 959-963, 2006
382006
A high-slew rate SiGe BiCMOS operational amplifier for operation down to deep cryogenic temperatures
R Krithivasan, Y Lu, L Najafizadeh, C Zhu, JD Cressler, S Chen, ...
2006 Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2006
352006
Single event transient response of SiGe voltage references and its impact on the performance of analog and mixed-signal circuits
L Najafizadeh, SD Phillips, KA Moen, RM Diestelhorst, M Bellini, PK Saha, ...
IEEE Transactions on Nuclear Science 56 (6), 3469-3476, 2009
312009
Proton tolerance of SiGe precision voltage references for extreme temperature range electronics
L Najafizadeh, M Bellini, APG Prakash, GA Espinel, JD Cressler, ...
IEEE Transactions on Nuclear Science 53 (6), 3210-3216, 2006
312006
Normative database of judgment of complexity task with functional near infrared spectroscopy—application for TBI
F Amyot, T Zimmermann, J Riley, JM Kainerstorfer, V Chernomordik, ...
Neuroimage 60 (2), 879-883, 2012
302012
A simple voltage reference using transistor with ZTC point and PTAT current source
L Najafizadeh, IM Filanovsky
2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No …, 2004
282004
SiGe BiCMOS precision voltage references for extreme temperature range electronics
L Najafizadeh, C Zhu, R Krithivasan, JD Cressler, Y Cui, G Niu, S Chen, ...
2006 Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2006
252006
A monolithic, wide-temperature, charge amplification channel for extreme environments
RM Diestelhorst, S Finn, L Najafizadeh, D Ma, P Xi, C Ulaganathan, ...
2010 IEEE Aerospace Conference, 1-10, 2010
212010
Zeroing in on a zero-temperature coefficient point
IM Filanovsky, L Najafizadeh
The 2002 45th Midwest Symposium on Circuits and Systems, 2002. MWSCAS-2002 …, 2002
192002
A comparison of the effects of X-Ray and proton irradiation on the performance of SiGe precision voltage references
L Najafizadeh, AK Sutton, RM Diestelhorst, M Bellini, B Jun, JD Cressler, ...
IEEE Transactions on Nuclear Science 54 (6), 2238-2244, 2007
182007
Accurate optical parameter extraction procedure for broadband near-infrared spectroscopy of brain matter
E Sultan, L Najafizadeh, A Gandjbakhche, K Pourrezaei, AS Daryoush
Journal of Biomedical Optics 18 (1), 017008, 2013
172013
Quantitative principal component model for skin chromophore mapping using multi-spectral images and spatial priors
JM Kainerstorfer, JD Riley, M Ehler, L Najafizadeh, F Amyot, M Hassan, ...
Biomedical optics express 2 (5), 1040-1058, 2011
172011
Accurate modeling of single-event transients in a SiGe voltage reference circuit
KA Moen, L Najafizadeh, J Seungwoo, A Raman, M Turowski, ...
IEEE Transactions on Nuclear Science 58 (3), 877-884, 2011
172011
Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology
AS Cardoso, PS Chakraborty, N Karaulac, DM Fleischhauer, ...
IEEE Transactions on Nuclear Science 61 (6), 3210-3217, 2014
162014
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