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Wenjun Li
Wenjun Li
Globalfoundries US Inc.
Verified email at alumni.nd.edu
Title
Cited by
Cited by
Year
Breaking the efficiency barrier for ambient microwave power harvesting with heterojunction backward tunnel diodes
CHP Lorenz, S Hemour, W Li, Y Xie, J Gauthier, P Fay, K Wu
IEEE Transactions on Microwave Theory and Techniques 63 (12), 4544-4555, 2015
1072015
Polarization-engineered III-nitride heterojunction tunnel field-effect transistors
W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
1032015
GaN nanowire MOSFET with near-ideal subthreshold slope
W Li, MD Brubaker, BT Spann, KA Bertness, P Fay
IEEE electron device letters 39 (2), 184-187, 2017
512017
Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions
X Yan, W Li, SM Islam, K Pourang, HG Xing, P Fay, D Jena
Applied Physics Letters 107 (16), 2015
392015
Advanced terahertz sensing and imaging systems based on integrated III-V interband tunneling devices
L Liu, SM Rahman, Z Jiang, W Li, P Fay
Proceedings of the IEEE 105 (6), 1020-1034, 2017
382017
Universal charge-conserving TFET SPICE model incorporating gate current and noise
H Lu, W Li, Y Lu, P Fay, T Ytterdal, A Seabaugh
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 2 …, 2016
292016
Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels
A Seabaugh, S Fathipour, W Li, H Lu, JH Park, AC Kummel, D Jena, ...
2015 IEEE International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2015
252015
Single and multi-fin normally-off Ga
W Li, K Nomoto, Z Hu, T Nakamura, D Jena, HG Xing
IEDM Tech. Dig, 12, 2019
232019
Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices
C Lund, B Romanczyk, M Catalano, Q Wang, W Li, D DiGiovanni, MJ Kim, ...
Journal of Applied Physics 121 (18), 2017
202017
Tunnel FET analog benchmarking and circuit design
H Lu, P Paletti, W Li, P Fay, T Ytterdal, A Seabaugh
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 …, 2018
182018
IEEE International Electron Devices Meeting (IEDM)
A Seabaugh, S Fathipour, W Li, H Lu, JH Park, AC Kummel, D Jena, ...
IEEE, Washington, DC, USA, 2015
182015
Hybrid low‐k spacer scheme for advanced FinFET technology parasitic capacitance reduction
M Gu, X Wang, W Li, M Aquilino, J Peng, H Wang, D Jaeger, K Tabakman, ...
Electronics Letters 56 (10), 514-516, 2020
162020
Overcoming the efficiency limitation of low microwave power harvesting with backward tunnel diodes
CHP Lorenz, S Hemour, W Li, Y Xie, J Gauthier, P Fay, K Wu
2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015
162015
Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing
Y Yue, X Yan, W Li, HG Xing, D Jena, P Fay
Journal of Vacuum Science & Technology B 32 (6), 2014
162014
Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases
Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ...
Applied Physics Letters 105 (17), 2014
162014
Group III-nitride compound heterojunction tunnel field-effect transistors and methods for making the same
P Fay, W Li, D Jena
US Patent 9,905,647, 2018
152018
Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors
W Li, L Cao, C Lund, S Keller, P Fay
physica status solidi (a) 213 (4), 905-908, 2016
152016
Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the same
P Fay, L Cao, D Jena, W Li
US Patent 9,954,085, 2018
112018
Microwave detection performance of In0.53Ga0.47As/GaAs0.5Sb0.5 quantum‐well tunnel field‐effect transistors
W Li, P Fay, T Yu, J Hoyt
Electronics Letters 52 (10), 842-844, 2016
92016
Novel III-N heterostructure devices for low-power logic and more
P Fay, W Li, L Cao, K Pourang, SM Islam, C Lund, S Saima, ...
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 767-769, 2016
72016
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