| Intensity dependence of superradiant emission from radiatively coupled excitons in multiple-quantum-well Bragg structures S Haas, T Stroucken, M Hübner, J Kuhl, B Grote, A Knorr, F Jahnke, ... Physical Review B 57 (23), 14860, 1998 | 78 | 1998 |
| Semiconductor device with increased snapback voltage BH Grote, VK Khemka, TA Khan, W Huang, R Zhu US Patent 8,193,585, 2012 | 42 | 2012 |
| Methods of making laterally double diffused metal oxide semiconductor transistors having a reduced surface field structure BH Grote, TA Khan, VK Khemka, R Zhu US Patent 8,623,732, 2014 | 30 | 2014 |
| Collective radiative decay of light-and heavy-hole exciton polaritons in multiple-quantum-well structures D Ammerlahn, J Kuhl, B Grote, SW Koch, G Khitrova, H Gibbs Physical Review B 62 (11), 7350, 2000 | 28 | 2000 |
| Dominance of radiative coupling over disorder in resonance Rayleigh scattering in semiconductor multiple quantum-well structures JP Prineas, J Shah, B Grote, C Ell, G Khitrova, HM Gibbs, SW Koch Physical review letters 85 (14), 3041, 2000 | 26 | 2000 |
| Electronic device with capcitively coupled floating buried layer VK Khemka, TA Khan, R Zhu, W Huang, BH Grote US Patent 8,338,872, 2012 | 21 | 2012 |
| Influence of the dielectric environment on the radiative lifetime of quantum-well excitons D Ammerlahn, B Grote, SW Koch, J Kuhl, M Hübner, R Hey, K Ploog Physical Review B 61 (7), 4801, 2000 | 19 | 2000 |
| A 90nm BiCMOS technology featuring 400GHz fMAX SiGe:C HBT VP Trivedi, JP John, J Young, T Dao, D Morgan, R Ma, D Hammock, ... 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 60-63, 2016 | 18 | 2016 |
| Superradiant exciton/light coupling in semiconductor heterostructures—Part II: Experiments J Kuhl, M Hübner, D Ammerlahn, T Stroucken, B Grote, S Haas, SW Koch, ... Advances in Solid State Physics 38, 281-295, 1999 | 18 | 1999 |
| Semiconductor device and related manufacturing method TA Khan, BH Grote, VK Khemka, R Zhu US Patent App. 12/882,899, 2012 | 16 | 2012 |
| Field-effect transistor and method therefor SR Mehrotra, L Radic, B Grote US Patent 10,522,677, 2019 | 15 | 2019 |
| Resonance Rayleigh scattering from semiconductor heterostructures: The role of radiative coupling B Grote, C Ell, SW Koch, HM Gibbs, G Khitrova, JP Prineas, J Shah Physical Review B 64 (4), 045330, 2001 | 15 | 2001 |
| On the Influence of Disorder on Radiatively Coupled Multiple Quantum Wells B Grote, T Stroucken, S Haas, P Thomas, SW Koch physica status solidi (b) 205 (1), 209-218, 1998 | 14 | 1998 |
| Combined lateral vertical RESURF (CLAVER) LDMOS structure T Khan, V Khemka, R Zhu, W Huang, X Cheng, P Hui, M Ger, B Grote, ... 2009 21st International Symposium on Power Semiconductor Devices & IC's, 13-16, 2009 | 12 | 2009 |
| Towards ultimate scaling of LDMOS with Ultralow Specific On-resistance S Mehrotra, L Radic, B Grote, T Saxena, G Qin, V Khemka, T Thomas, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 11 | 2020 |
| Termination design for trench superjunction power MOSFET G Qin, V Khemka, L Radic, B Grote, T Saxena, M Zitouni US Patent 10,103,257, 2018 | 10 | 2018 |
| Robust deep trench isolation V Khemka, A Bose, MC Butner, BH Grote, TA Khan, S Shen, R Zhu US Patent 7,608,908, 2009 | 10 | 2009 |
| RADIO FREQUENCY COUPLING AND TRANSITION STRUCTURE LI Qiang, R Reuter, B Grote, L Radic, Tong, Ziqiang US Patent 10,225,925, 2017 | 9 | 2017 |
| Dual-Gate JFET Modeling II: Source Pinchoff Voltage and Complete Modeling Formalism K Xia, CC McAndrew, B Grote IEEE Transactions on Electron Devices 63 (4), 1416-1422, 2016 | 9 | 2016 |
| Transition from superradiant free-polarization decay to subradiant photon-echo M Hübner, J Kuhl, B Grote, T Stroucken, SW Koch, R Hey, K Ploog Solid state communications 108 (10), 787-791, 1998 | 9 | 1998 |
Stephan W. KochProfessor, Fachbereich Physik, Philipps Universitaet Marburg, Renthof 5, Germanyبريد إلكتروني تم التحقق منه على physik.uni-marburg.de
